ms3187-12
Abstract: No abstract text available
Text: MIL-C-26482, Series 2 Connectors PV Protective Metal Caps Plugs .047 1,19mm Max. L .169 +_ .008 DIA. 4.29 + _ 0.20) A F H +.500 (12.7) -.250 (6.35) M CHAIN LENGTH Receptacles PVS 80 -12 C A MS 3180 -12 C A SERIES PREFIX PVS - ITT Cannon Prefix MS - Complies with MIL-C-26482 (Series 2)
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MIL-C-26482,
MIL-C-26482
or3181
U1-9206-006
M39029/4-111
M39029/5-118
M39029/4-113
MS27488-20
MS27488-16
MS27488-12
ms3187-12
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Untitled
Abstract: No abstract text available
Text: MIL-C-26482, Series I Connectors KPT/KPSE Dummy Receptacles KPT 15 - 12A How To Order * .140 RAD. MAX. SERIES PREFIX G DIA 4 HOLES DUMMY RECEPTACLE INDICATOR A DIA. SHELL SIZE MODIFICATIONS J E K F SERIES PREFIX KPT - ITT Cannon Prefix NOTE: For MS Version and additional finishes see PV catalog.
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MIL-C-26482,
QQ-P-416
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RCA-41024
Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Text: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )
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RCA-41024
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
41024
transistor C4 016
rca 0190 transistor
4-1024
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pj 69 SMD diode
Abstract: smd g2b 2yl1 54HC138 5N 3011 smd diode marking g2a DIODE S2B smd y12 pj 87 diode I52A
Text: MIL-M-38510/658 19 D e c e m b e r 1 9 8 6 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GI TA L, HIGH SPEED, CMOS, DECODERS, MONOLITHIC SILICON, POSITIVE LOGIC v ' T h i s s p e c i f i c a t i o n 1s a p p r o v e d ments and Agencies of th e 1.
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MIL-M-38510/658
MIL-M-38510,
pj 69 SMD diode
smd g2b
2yl1
54HC138
5N 3011
smd diode marking g2a
DIODE S2B
smd y12
pj 87 diode
I52A
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RC4227
Abstract: No abstract text available
Text: - 281 - \m, mm, m ?* •/ bw± RC4227 Raytheon 2 • A ^ j S I K I S r i f : 3. 8 n V / / Hz 0 A t l t 7 - b y • m ss, m % f t • # A £ f § T O P V IE W ±18 V 0.7 V 0—+70 r m k iiw i m ^ iu jg 0—^70 if s s * 658 H > Sk H ±18 0.7 a -h m u
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RC4227
RC4227G
RC4227F
Ta-25Â
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BF657
Abstract: BF658
Text: BF 657 BF 658 BF 659 SILICON PLANAR NPN P R E L IM IN A R Y D A T A M E D IU M POWER V ID E O A M P L IF IE R S T h e B F 6 5 7 , B F 6 5 8 and B F 6 5 9 are silico n planar epitaxial N P N transistors in T O - 3 9 metal case. T h e y are p a rtic u la rly designed f o r a pplication w ith p re cision " I N - L I N E " large
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100mA
BF657
BF658
BF659vCEO
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HDC-2815
Abstract: HDC-8012 hdc8012 HDA-10013 HDC-10015 HDA-10016CR HDC-8015 HDA-10016DR HDA-4012 HDA-5626DR
Text: 1 Digit Numeric Displays RoHS Conformity 0.28" ~ 0.31" Color Device No Front View lF=20mA/segment Ta=25°C Common Common Anode Cathode Wavelength nm Brightness (ucd) Typical Surface, Emitter VF XÓ Xp Segment Minimum Typical (V) 5 . 40 6.00 3. 0mi n "1I i^n
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20mA/segment
HDA-2812
HDC-2812
HDA-2813
HDC-2813
HDA-2814
HDC-2814
HDA-2815
HDC-2815
HDA-2816DR
HDC-8012
hdc8012
HDA-10013
HDC-10015
HDA-10016CR
HDC-8015
HDA-10016DR
HDA-4012
HDA-5626DR
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hda-5216cr
Abstract: HDC-2815 DA 2822 M HDA-4315 hda-5623 hda-2812 HDC500 HDA-8015 8015 j HDC-5622
Text: 1 Digit Numeric Displays RoHS C on form ity 0 .28 " ~ 0 .31 " lF=20mA/segment Device No Color Wavelength nm VF Front View Common Common Surface, Anode Cathode Segment Brightness (ucd) Typical Xp Emitter Ta=25°C /d Minimum Typical (V) 5 .4 0 . 6 .0 0 3.0m in
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20mA/segment
HDA-2812
HDC-2812
HDA-2813
HDC-2813
HDA-2814
HDC-2814
HDA-2815
HDC-2815
HDA-2816DR
hda-5216cr
DA 2822 M
HDA-4315
hda-5623
HDC500
HDA-8015
8015 j
HDC-5622
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hda-5216cr
Abstract: HDA-4012 HDA-3645 hda-5623 HDA-2812 HDC-2815 HDC-8015 HDA-4315 HDC-5216CR HDA-5013
Text: 1 Digit Numeric Displays RoHS C on form ity 0 .28 " ~ 0 .31 " lF=20mA/segment Device No Color Wavelength nm VF Front View Common Common Anode /d Xp Cathode Brightness (ucd) Typical Surface, Emitter Ta=25°C Minimum Typical Segment (V) 5.40 . 6.00 3.0min
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20mA/segment
HDA-2812
HDC-2812
HDA-2813
HDC-2813
HDA-2814
HDC-2814
HDA-2815
HDC-2815
HDA-2816DR
hda-5216cr
HDA-4012
HDA-3645
hda-5623
HDC-8015
HDA-4315
HDC-5216CR
HDA-5013
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SN74HC658
Abstract: HC659 HC658
Text: SN54HC658. SN54HC659, SN74HC658, SN74HC659 OCTAL BUS TRANSCEIVERS WITH PARITY Bus Transceivers w ith Inverting Outputs H C 6 5 8 or True Outputs ( H C 659) S N 5 4 H C 6 5 8 J J $ N 5 4 H C 6 & & '7 ^ y o f PACKAGE S N 7 4 H C 6 5 8 . S NJM HCfiöS - { ' DW 'jOB NJTJUcC k AGE
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SN54HC658,
SN54HC659,
SN74HC658,
SN74HC659
HC658)
CHC659)
300-mil
16-BIT-WIDE
SN74HC658
HC659
HC658
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PDF
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2N4258
Abstract: 2N4257 2N4258/A MM4257 2N2369 MM4258 MA661
Text: MM4257 SILICON MM4258 PNP SILICO N ANN U LA R . . . designed fo r low voltages. applications TRANSISTORS requiring high speed switching at PNP S IL IC O N • C ollector-E m itter Saturation Voltage — • Switching T im e s l c = 10 m Adc - V c E (s a t) - 0 .1 5 V d c (M ax) @ lc - 10 m Adc
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MM4257
MM4258
2N4257
2N4258
2N2369
MM4257
MM4258
MM4257,
2N4258
2N4258/A
2N2369
MA661
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PDF
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B462G
Abstract: ba 658 B461G b461 Scans-048 DSAGER000159
Text: Vorläufige technische Daten B 461 G B462G Integsieste konfeaktlose magnetisch betätigte Schalkes Hall«Jäf£ekt mit Freigaheeingaag und offenes Kollektcwausgang, Wenn sin ausreichend gxoßes Magnetfeld vorhanden ist (B S B ^ ) und ein H«Signal am treigafoee ingang anliegt3 schaltet des
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B462G
10/UA
B61A180
B462G
ba 658
B461G
b461
Scans-048
DSAGER000159
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J103 transistor
Abstract: TL1-TL11 transistor bd136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D e sig n e d fo r 24 V olt U H F la rg e -s ig n a l, c o m m o n em itte r, c la s s -A B lin e a r a m p lifie r a p p lic a tio n s in ind u stria l and c o m m e rcia l F M /A M e q u ip m e n t o p e ra tin g
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MRF897
j10-5
J103 transistor
TL1-TL11
transistor bd136
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HL6501MG
Abstract: No abstract text available
Text: HL6501MG Visible High Power Laser Diode for DVD-RAM HITACHI ADE-208-515F Z Preliminary 7th Edition February 1998 Description The HL6501MG is a 0.65 J i m band AlGalnP laser diode(LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM. and
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HL6501MG
ADE-208-515F
HL6501MG
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T30A1
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE 1 • lc • V cex • hFE Collector c u rre n t. 30A 1 Collector-em itter v o lta g e . 1200V j DC current g a in . 75 j
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QM30TB-24
E80276
E80271
T30A1
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PDF
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C50U
Abstract: No abstract text available
Text: SGS-THOMSON M M § m [lO T « S B U W 92 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN TO -218 ABSOLUTE MAXIMUM RATINGS Sym bol P a ra m e te r V a lu e U n it VcEV C o lle cto r-e m itte r V oltage V Be = - 1.5 V
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VDE0860
Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Text: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.
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E54915
IEC380/VDE0806,
IEC435
VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204//^
VDE0113,
VDE0160,
VDE0832,
VDE0860
VDE0113
VDE0160
VDE0805
VDE0832
VDE0833
VDE0883
OPTO-ISOLATOR
optoisolator MCT2E
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PDF
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Esan
Abstract: t33e
Text: E-SAN E L EC TR O N IC CO LTD EME D • 3D37M0E □ □ □ 0 0 E 5 T m Active Delay Line ECL Interface 33E Series Specifications: • Delay tolerance • • • • • • • • Rise time Operating Temp. Supply Voltage Logic 1 O utput Logic 0 O utput
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3D37M0E
200mW
33E-010
33E-020
33E-030
33E-040
33E-050
33E-060
33E-070
33E-080
Esan
t33e
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620VDC
Abstract: 90E048 Esan
Text: E-SAN ELECTRO NIC CO LTD 24E ß a 3037MG2 00DG0S7 b Active Delay Line ECL 100K Series Interface • 24 Pin Dip Package Specifications: • Operating Temp. Range • Storage Temp. • Vee • Logic 1 Output • Logic 0 Output • Rise Time (20% to 8 0% )
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3037MG2
00DG0S7
025Vdc
620Vdc
90E-010
90E-017
90E-024
90E-032
90E-040
90E-048
90E048
Esan
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PDF
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Esan
Abstract: No abstract text available
Text: E-SAN ELECTRONIC CO LTD Active Delay Line ECL Interface Specifications: • Delay tolerance • Rise tim e • Operating Temp. • Supply Voltage • Logic 1 Output • Logic 0 Output • Logic 1 lutput • Logic 0 lutput • Power Dissipation 24E D ± 5% or 1 ns
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3C374D2
200mW
31E-5100
31E-5150
31E-5200
31E-5250
31E-5300
31E-5400
31E-5500
31E-5600
Esan
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PDF
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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marking G4
Abstract: SP J TRANSISTOR MARKING transistor D 659 TRANSISTOR MARKING CODE "SP"
Text: FMG4A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT5 (FMT, SC-74A) package • package marking: G4 • package contains two interconnected NPN digital transistors (DTC114TKA) FMG4A (SMT5) 2.9 ±0 .2 1.9 ±0 .2
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SC-74A)
DTC114TKA)
SC-59)
marking G4
SP J TRANSISTOR MARKING
transistor D 659
TRANSISTOR MARKING CODE "SP"
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PDF
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7447
Abstract: 09585
Text: LASER COMPONENTS GmbH Address Wemer-von-Siemens-Str. 15 P.O. Box 1129 D-82140 Olching D-82133 Olching Phone+49-8142-28640 • F a x +49-8142-286411 E-Mail: info@lasercomponents.com • Web: www.lasercomponents.com Datasheet for Order , LC Order Part Customer
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D-82140
D-82133
IR-1580.
3-LI325HV-62.
IR-1580-GMP-Premium.
08/Jan/2004
325-HV-1-62.
325-HV-1-62
7447
09585
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2SD552
Abstract: 2SB552 AC73
Text: lib TOSHIBA -CDISCRETE/OPTOl 9097250 T O S H I BA <DI S C R E T E / O P T O DE I ^ O T T E S O 5òC ' Cf" ' 07725 GDOTTSS j ’Z £5 _ _ SILICO N NPN TRIPLE DIFFU SED TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HGIH POWER AMPLIFIER APPLICATIONS.
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2SB552.
-65iimiimiiiiiiimuii.
2SD552
2SB552
AC73
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