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    CEM9433

    Abstract: ON 5134
    Text: AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 5 . 4 A , Rds on =65itiQ Rds(on)=1 OOmQ @ V gs =-4.5V. D @ V gs =-2.5V. D D D • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.


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    PDF 65itiQ CEM9433 CEM9433 ON 5134