in6263
Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
Text: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE
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OPA660
850MHz
OPA660
660-1GC
470pF
470pF
1N4007
in6263
coil gold detector circuit diagram
R2M diode
transconductance amplifier spice
OPA660AU
REF200
2N2907
BUF601
OPA1013
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opa1013 equivalent
Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
opa1013 equivalent
AGC OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
CCII APPLICATION
0525P
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AGC OPA660
Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
470pF
470pF
1N4007
AGC OPA660
in6263
transconductance amplifier spice
spice model 1n4148
DMF3068A
operational amplifier discrete schematic
1n4148 spice model
Group-Delay phase filter OTA
operational transconductance amplifier
pin configuration transistor 2n2907
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IN6263
Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
AGC OPA660
R2M 45
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
sbos007
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AGC OPA660
Abstract: in6263 operational amplifier discrete schematic bridge rectifier 1N4007 bl Common collector configuration basic R2M diode 1N4007 spice DMF3068A R2M 45 spice model 1n4148
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
AGC OPA660
in6263
operational amplifier discrete schematic
bridge rectifier 1N4007 bl
Common collector configuration basic
R2M diode
1N4007 spice
DMF3068A
R2M 45
spice model 1n4148
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in6263
Abstract: BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
400MHz
OPA660
in6263
BUF601
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2N2907
Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
BUF601
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opa660 spice
Abstract: ACF2101 equivalent SBOA047 BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
400MHz
OPA660
SBOA075
OPA660AP
OPA660AU
OPA660AU/2K5
SBOM113,
opa660 spice
ACF2101 equivalent
SBOA047
BUF601
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IN6263
Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
1N4007 BL
transconductance amplifier spice
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
2N2907 spice
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Untitled
Abstract: No abstract text available
Text: Metallized Impregnated Paper EMI Suppression Capacitors PME264 Series, Class X2, 660 VAC Overview Applications Multilayer metallized paper, encapsulated and impregnated in selfextinguishing material meeting the requirements of UL 94 V–0. For worldwide use in electromagnetic interference suppression
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PME264
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications Multilayer metallized paper, encapsulated and impregnated in selfextinguishing material meeting the requirements of UL 94 V–0. For worldwide use in electromagnetic interference suppression
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PME264
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.
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PME264
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.
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PME264
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IRHM9064
Abstract: IRHM93064 JANSF2N7424 JANSR2N7424
Text: PD - 91438C IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) IRHM93064 300K Rads (Si) RDS(on)
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91438C
IRHM9064
JANSR2N7424
MIL-PRF-19500/660
O-254AA)
IRHM93064
JANSF2N7424
O-254AA.
IRHM9064
IRHM93064
JANSF2N7424
JANSR2N7424
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|
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Untitled
Abstract: No abstract text available
Text: PD - 91438C IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) IRHM93064 300K Rads (Si) RDS(on)
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91438C
IRHM9064
JANSR2N7424
MIL-PRF-19500/660
O-254AA)
IRHM93064
JANSF2N7424
O-254AA.
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.
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Original
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PDF
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PME264
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Untitled
Abstract: No abstract text available
Text: PD - 93858 IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on)
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IRHM9260
JANSR2N7426
MIL-PRF-19500/660
O-254AA)
IRHM93260
JANSF2N7426
O-254AA
ga252-7105
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P264EL104
Abstract: PME264 IEC60062
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.
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Original
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PME264
P264EL104
IEC60062
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Untitled
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks PME264 Series Metallized Impregnated Paper, Class X2, 660 VAC Overview Applications The PME264 Series is constructed of multilayer metallized paper, encapsulated and impregnated in self-extinguishing material meeting the requirements of UL 94 V–0.
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Original
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PDF
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PME264
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IRHM9064
Abstract: IRHM93064 JANSF2N7424 JANSR2N7424
Text: PD - 91438B IRHM9064 JANSR2N7424 60V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9064 100K Rads (Si) RDS(on) 0.05Ω ID QPL Part Number
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91438B
IRHM9064
JANSR2N7424
MIL-PRF-19500/660
O-254AA)
IRHM93064
JANSF2N7424
O-254AA.
IRHM9064
IRHM93064
JANSF2N7424
JANSR2N7424
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JANSR2N7425
Abstract: IRHM9160 IRHM93160 JANSF2N7425
Text: PD - 91415E IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω ID QPL Part Number
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91415E
IRHM9160
JANSR2N7425
MIL-PRF-19500/660
O-254AA)
IRHM93160
JANSF2N7425
O-254AA.
JANSR2N7425
IRHM9160
IRHM93160
JANSF2N7425
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JANSR2N7425
Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
Text: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω
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PD-91415G
IRHM9160
JANSR2N7425
MIL-PRF-19500/660
O-254AA)
IRHM93160
JANSF2N7425
O-254AA.
JANSR2N7425
IRHM9160
IRHM93160
JANSF2N7425
35AA
L082
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Untitled
Abstract: No abstract text available
Text: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω
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PD-91415G
IRHM9160
JANSR2N7425
MIL-PRF-19500/660
O-254AA)
IRHM93160
JANSF2N7425
O-254AA.
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IRHM9160
Abstract: IRHM93160 JANSF2N7425 JANSR2N7425
Text: PD - 91415F IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω
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91415F
IRHM9160
JANSR2N7425
MIL-PRF-19500/660
O-254AA)
IRHM93160
JANSF2N7425
O-254AA.
IRHM9160
IRHM93160
JANSF2N7425
JANSR2N7425
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