CBVK741B019
Abstract: F63TNR FDD6030BL FDD6680
Text: FDD6030BL N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for
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FDD6030BL
O-252
CBVK741B019
F63TNR
FDD6030BL
FDD6680
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6680
Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935
Text: FDD6630A N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
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FDD6630A
O-252
6680
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD6630A
FDD6680
FZ9935
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TO-252 N-channel MOSFET
Abstract: No abstract text available
Text: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 26 A, 100 V.
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FDD3680
TO-252 N-channel MOSFET
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FDD6680
Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
Text: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.
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FDD5670
FDD6680
CBVK741B019
F63TNR
FDD5670
FDD marking
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Mosfet FDD
Abstract: 6680 MOSFET TO-252 fairchild CBVK741B019 F63TNR FDD5612 FDD6680 marking 300 to252 C1 MARKING TO-252
Text: FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 19 A, 60 V. RDS ON = 0.055 Ω @ VGS = 10 V
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FDD5612
Mosfet FDD
6680 MOSFET
TO-252 fairchild
CBVK741B019
F63TNR
FDD5612
FDD6680
marking 300 to252
C1 MARKING TO-252
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Untitled
Abstract: No abstract text available
Text: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 26 A, 100 V.
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FDD3680
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Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
MTD3055V*
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Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955V*
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34A-100
Abstract: CBVK741B019 F63TNR FDD3670 FDD6680 A1626
Text: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V.
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FDD3670
34A-100
CBVK741B019
F63TNR
FDD3670
FDD6680
A1626
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fdd2670
Abstract: No abstract text available
Text: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 0.125 Ω @ VGS = 10 V
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FDD2670
fdd2670
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MTD2955
Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955
CBVK741B019
F63TNR
FDD6680
MTD2955V
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Mosfet FDD
Abstract: ON 534 TO252 fdd 690
Text: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6644/FDU6644
O-251AA)
O-252
O-252)
O-252
30TYP
Mosfet FDD
ON 534 TO252
fdd 690
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
IRFR9024*
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Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
a9hv
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CBVK741B019
Abstract: F63TNR FDD2670 FDD6680
Text: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V
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FDD2670
CBVK741B019
F63TNR
FDD2670
FDD6680
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CBVK741B019
Abstract: F63TNR FDD5690 FDD6680 Mosfet FDD
Text: FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Low gate charge 23nC typical .
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FDD5690
CBVK741B019
F63TNR
FDD5690
FDD6680
Mosfet FDD
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Untitled
Abstract: No abstract text available
Text: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6630A
O-252
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FDD5614P
Abstract: No abstract text available
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 95 mΩ @ VGS = –10 V
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FDD5614P
O-252
FDD5614P
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Untitled
Abstract: No abstract text available
Text: FDD6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6692
O-252
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M3247
Abstract: dpak DIODE
Text: FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6530A
O-252
M3247
dpak DIODE
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CBVK741B019
Abstract: F63TNR FDD6612A FDD6680 TO-252 fairchild
Text: FDD6612A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior
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FDD6612A
O-252
CBVK741B019
F63TNR
FDD6612A
FDD6680
TO-252 fairchild
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CBVK741B019
Abstract: F63TNR FDD6676 FDD6680
Text: FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6676
O-252
CBVK741B019
F63TNR
FDD6676
FDD6680
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CBVK741B019
Abstract: F63TNR FDD6644 FDD6680
Text: FDD6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6644
O-252
CBVK741B019
F63TNR
FDD6644
FDD6680
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