MDE1752
Abstract: MDE1752R
Text: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDE1752
MDE1752
MDE1752R
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MDE1752
Abstract: MDE1752RH
Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
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MDE1752
MDE1752
MDE1752RH
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Untitled
Abstract: No abstract text available
Text: HUFA75333G3, HUFA75333P3, HUFA75333S3S TM Data Sheet November 2000 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75333G3,
HUFA75333P3,
HUFA75333S3S
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APT66M60B2
Abstract: APT66M60L MIC4452
Text: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66M60B2
APT66M60L
O-264
O-247
APT66M60B2
APT66M60L
MIC4452
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300V dc dc boost converter
Abstract: APT66M60L APT66M60B2 MIC4452 AG245 536E
Text: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66M60B2
APT66M60L
O-264
O-247
300V dc dc boost converter
APT66M60L
APT66M60B2
MIC4452
AG245
536E
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33A250
Abstract: No abstract text available
Text: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66M60B2
APT66M60L
O-264
APT66M60B2
O-247
33A250
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zvs flyback driver
Abstract: No abstract text available
Text: APT66F60B2 APT66F60L 600V, 66A, 0.10Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66F60B2
APT66F60L
310ns
O-264
APT66F60B2
O-247
zvs flyback driver
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IRF3205ZPBF
Abstract: No abstract text available
Text: PD - 94869 AUTOMOTIVE MOSFET IRF3205ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 6.5mΩ
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IRF3205ZPbF
IRF3205ZPBF
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IRF3205Z
Abstract: IRF3205ZL IRF3205ZS
Text: PD - 94653A IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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4653A
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
IRF3205Z
IRF3205ZL
IRF3205ZS
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IRF3205Z
Abstract: IRF3205ZL IRF3205ZS irf3205
Text: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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94653B
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
IRF3205Z
IRF3205ZL
IRF3205ZS
irf3205
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IRF3205Z
Abstract: No abstract text available
Text: PD - 94653 IRF3205Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ
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IRF3205Z
O-220AB
IRF1010
IRF3205Z
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SEC IRF 640
Abstract: No abstract text available
Text: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description
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94653C
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
SEC IRF 640
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IRF3205ZPBF
Abstract: No abstract text available
Text: PD - 95705 IRF3205ZPbF IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as Lead-Free
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IRF3205ZPbF
IRF3205ZS
IRF3205ZL
O-220
AN-994.
O-220AB
IRF3205ZPBF
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diode 66a
Abstract: IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS
Text: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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94653B
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
diode 66a
IRF 640 mosfet
IRF3205Z
IRF3205ZL
IRF3205ZS
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marking 66a
Abstract: No abstract text available
Text: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
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IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
AN-994.
marking 66a
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Untitled
Abstract: No abstract text available
Text: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
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IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
O-220AB.
O-220AB
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IRF3205
Abstract: marking 66a IRF3205ZPBF
Text: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
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IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
AN-994.
IRF3205
marking 66a
IRF3205ZPBF
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TAG 233 600
Abstract: tag 627 800 LC-R1233P LC-R1233 30ah
Text: Individual Data Sheets For main and standby power supplies. Expected trickle design life: 6 – 9 years at 20°C according to Eurobat. LC-R1233P Dimensions mm Terminal type M6 16 16 Contents indicated (including the recycle marking, etc.) are subject to change without notice.
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LC-R1233P
UL94HB)
130mm
155mm
180mm
TAG 233 600
tag 627 800
LC-R1233P
LC-R1233
30ah
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relay 12V, 70A
Abstract: No abstract text available
Text: FSPYC160R, FSPYC160F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYC160R,
FSPYC160F
relay 12V, 70A
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1/929 rev oh s26
Abstract: No abstract text available
Text: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V
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ES51964
6600counts)
00kHz
600nF
00MHz
10kHz)
cl113
RS232
SEG34
SEG33
1/929 rev oh s26
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uPD7500* instruction set
Abstract: D7556 JPD7566ACS uPD7500 instruction set a diagram rice cooker microcomputer stop mode halt mode NEC retenti EVAKIT-7500 20ppd7556 uPD7500 instruction set
Text: NEC #iPD7556/56A/66/66A 4-Bit, Single-Chip CMOS Microcomputers With Comparator NEC Electronics Inc. Description The /JPD7556/66A and /JPD7566/66A are low-end ver sions of pPD7500 series products. These m icrocom put ers in corp orate a 4-bit com parator input and are useful
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uPD7556
uPD7556A
uPD7566
uPD7566A
/JPD7556/66A
/JPD7566/66A
pPD7500
/JPD7500
COM-87
juPD7556/56A/66/66A
uPD7500* instruction set
D7556
JPD7566ACS
uPD7500 instruction set a
diagram rice cooker
microcomputer stop mode halt mode NEC retenti
EVAKIT-7500
20ppd7556
uPD7500 instruction set
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R TM NM93C66A 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM 93C 66A is 4,096 bits of CM OS non-volatile, electrically erasable m em ory available user organized as either 256 16-bit registers or 512 8-bit registers. The user organization is deter
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NM93C66A
16-bit
93C66A
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR T M General Description Features The NM 93C66A is 4,096 bits of CM OS non-volatile, electrically erasable m em ory available user organized as either 256 16-bit registers or 512 8-bit registers. The user organization is deter m ined by the status of the ORG input. The m em ory device is
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93C66A
16-bit
200nA
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fuse BJE 147
Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
Text: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise
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ZUP-400
JA549-79-01
R-2-12
R-13-14
R-15-16
R-17-32
ZUP-400
RCR-9102)
MIL-HDBK-217F.
GENRAD-2503.
fuse BJE 147
fuse 9 BJE 147
SHINDENGEN TR 222
7431u
ZD205
zd106
R-33
mip0224
d1fl20u
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