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    66A SMD Search Results

    66A SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    66A SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N0807

    Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
    Text: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1


    Original     		SPP80N08S2-07 SPB80N08S2-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4263 2N0807 P-TO263-3-2 2N0807 Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G PDF

    2N0807

    Abstract: INFINEON PART MARKING to263
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode ID 175°C operating temperature P- TO262 -3-1  Avalanche rated max. SMD version P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPB80N08S2-07 Q67040-S4263 Q67040-S4264 Q67060-S6082 2N0807 INFINEON PART MARKING to263 PDF

    PN0807

    Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 Q67060-S6046 PN0807 BSPP100N08S2-07 BSPB100N08S2-07, PN0807 smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100 PDF

    2N0807

    Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode 175°C operating temperature  Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 2N0807 Q67040-S4264 2N0807 Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 PDF

    PN0807

    Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
    Text: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature  N-Channel Product Summary  Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m  Avalanche rated ID 100 A  dv/dt rated P-TO263-3-2 Type


    Original     		SPP100N08S2-07 SPB100N08S2-07 P-TO263-3-2 P-TO220-3-1 Q67060-S6044 PN0807 P-TO263-3-2 Q67060-S6046 P-TO220-3-1 PN0807 SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2  Avalanche rated V 6.8 m 100 A P- TO220 -3-1  dv/dt rated Ideal for fast switching buck converter


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 Q67060-S6046 PN0807 BSPP100N08S2-07 BSPB100N08S2-07, PDF

    PN0807

    Abstract: 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 PN0807 Q67060-S6046 BSPP100N08S2-07 BSPB100N08S2-07, PN0807 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 PN0807 Q67060-S6046 BSPP100N08S2-07 BSPB100N08S2-07, PDF

    PN0807

    Abstract: 66a smd
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2  Avalanche rated V 6.8 m 100 A P- TO220 -3-1  dv/dt rated Type


    Original     		SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 Q67060-S6046 PN0807 BSPP100N08S2-07 BSPB100N08S2-07, 66a smd PDF

    2N0807

    Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 Q67040-S4264 2N0807 Q67060-S6082 2N0807 Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 A410 PDF

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264 PDF

    smd diode br

    Abstract: diode 66a KRF7501
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		KRF7501 smd diode br diode 66a KRF7501 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSPYC160R, FSPYC160F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		FSPYC160R, FSPYC160F FSPYC160F PDF

    relay 12V, 70A

    Abstract: No abstract text available
    Text: FSPYC160R, FSPYC160F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		FSPYC160R, FSPYC160F relay 12V, 70A PDF

    4n0609

    Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
    Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 PG-TO263-3-2 4N0609 IPI45N06S4-09 PG-TO262-3-1 4n0609 F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06 PDF

    IPB048N06L

    Abstract: IPP048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMDversion ID 60 V 4.4 m: 100 A • 175 °C operating temperature


    Original     		IPP048N06L IPB048N06L IPP048N06L IPB048N06L PG-TO220-3 PG-TO263-3 048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3 PDF

    048N06L

    Abstract: No abstract text available
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 048N06L P-TO263-3-2 048N06L PDF

    048N06L

    Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 P-TO263-3-2 048N06L 048N06L PG-TO220-3 66a smd PDF

    048n06l

    Abstract: 44 SMD dpak
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 048N06L P-TO263-3-2 048n06l 44 SMD dpak PDF

    048N06L

    Abstract: IPP048N06L IPB048N06L IEC61249-2-21 PG-TO220-3 GS-20
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		IPP048N06L IPB048N06L IEC61249-2-21 IPP048N06L IPB048N06L P-TO220-3-1 P-TO263-3-2 048N06L 048N06L IEC61249-2-21 PG-TO220-3 GS-20 PDF

    ITD50N04S4L-07

    Abstract: No abstract text available
    Text: ITD50N04S4L-07 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS on ,max 7.2 mΩ ID 50 A Features • Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ITD50N04S4L-07 PG-TO252-5 PG-TO252-5-311 4T04L07 ITD50N04S4L-07 PDF

    IRF7506

    Abstract: DIODE SMD MARKING CODE SF
    Text: PD - 9.1268B International llOR1Rectifier IRF7506 PRELIMINARY HEXFET Power IMOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching


    OCR Scan     		1268B IRF7506 DIODE SMD MARKING CODE SF PDF

    LD12A VOLTAGE REGULATOR

    Abstract: Ggg 12A IRF7504 smd code marking js diode smd marking 328
    Text: International S Rectifier PD 9.1267C IRF7504 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low O n-R esistance Dual P-C hannel M O S F E T Very Sm all S O IC Package Low Profile < 1 .1 mm Available in T a p e & Reel


    OCR Scan     		1267C IRF7504 IRF7504 LD12A VOLTAGE REGULATOR Ggg 12A smd code marking js diode smd marking 328 PDF

    p-ch mosfet smd MARKING code A

    Abstract: Diode SMD SJ 66A IRF7507 smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A smd diode F6 DIODE SMD MARKING CODE gi smd marking code 21b diode smd code F6
    Text: International S Rectifier PD 9.1269C IRF7507 PRELMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching


    OCR Scan     		1269C IRF7507 p-ch mosfet smd MARKING code A Diode SMD SJ 66A smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A smd diode F6 DIODE SMD MARKING CODE gi smd marking code 21b diode smd code F6 PDF