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    LP 1610

    Abstract: CTH6 SCR 25a CSA408 CSH640 CTH640 1k ohms
    Text: This TO-220 Material SCR AND TRIACS Copyrighted ru u LP UJ 111 _0 -C Maximum Ratings DEVICE VDRU IT RMS IT(»V) VGBM Electrical Characteristics ISR RGK= IDRM IGU PG|AV) lOuSm ax 20m Sm ax VT 6 (Ta=25°C, U nless Otherwise Specified) IT VT(T0) rT VGT IGT 0 VD


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    PDF O-220 20mSmax 67xVDRM, VFU35V, CTH640 10uSmax LP 1610 CTH6 SCR 25a CSA408 CSH640 1k ohms

    TAG 233 600

    Abstract: tag 200-600 S1210 S1210BS S1210DS S1210MS
    Text: TAG SEMICONDUCTORS LTD c S1210BSS1210M S S C R 'S G 12 A 2 0 0 - 6 0 0 V 10-25 mA J\JL The S1210 series silicon controlled rectifiers are high performance glass passivated PNPN devices. These parts are intended for hybrid applications. S! SUB MINI Absolute Maximum Ratings


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    PDF S1210BS -S1210MS S1210 S1210DS S1210MS S12-Chips TAG 233 600 tag 200-600 S1210MS

    E0102YG

    Abstract: E01 TAG E0102AG E0102FG scr tag 2 tag E01
    Text: TAG SEM IC ON DUCT OR S LTD 8834750 TAG ^3 SEMICONDUCTORS LTD ' 63C TAG SEM ICO N DU CTO RS LTD DE | ÖÖ347S0 0D00Ö75 0 I 008720 * 7 - V E0102YG E0102AG FA ST S C R 'S 0 .8 A 3 0 -1 0 0 V < 2 0 0 pA T h e E0102 series silicon controlled rectifiers are high performance


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    PDF E0102YG E0102AG E0102 E0102FG E0102AG Cto125Â -67xVDrm 67XVdrm 35VIT E01 TAG scr tag 2 tag E01

    Tj21

    Abstract: S1210BH S1210 S1210NH S1210DH S1210MH Tag bi
    Text: SEMICONDUCTORS 8834750 h3 LTD TAG SEMICONDUCTORS LTD I F |flfl3 4 75 G 6 3C 0 0 7 5 0 TAG SEMICONDUCTORS LTD A X » is ? r 'î iâ i ^ 3 . D T - i a S ’i S ’ The S1210 series silicon controlled rectifiers are high performance glass passivated PNPN devices. These parts


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    PDF 347SG 00DD7SD S1210BH -S1210NH S1210 S1210DH S1210MH S1210NH Tj21 S1210NH S1210MH Tag bi

    S2512BH

    Abstract: S2512NH SCR 25a S2512MH S2512DH S2512
    Text: TAG SEMICONDUCTORS LTD bB 8834750 TAG SEMICONDUCTORS LTD dF | flA3475D □□□□757 □ |~~ 63C 00757 ' S2512B HS2512IMH S C R 'S TAG SEMICONDUCTORS LTD 2 5 A 2 0 0 -8 0 0 V 2 5 -5 0 mA i TO 2 2 0 Ta Parameter Part Nr. Symbol Repetitive Peak Off State Voltage


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    PDF dggd757 S2512BH -S2512IMH 00-800V S2512 S2512DH S2512MH S2512NH 67xVDrm S2512NH SCR 25a

    S0405NH

    Abstract: S0405BH S0405DH S0405MH TAG SCR
    Text: ~b3 TAG SEMICONDUCTORS LTD 8834750 TAG SEMICONDUCTORS l_TO DFjJññB47SD C rr-¿ ? ^ - 13 63C 0 0 7 2 2 TAG SEMICONDUCTORS LTD 00QQ7E5 S0405B H S 0 4 0 5 N H SCR'S 4 .0 A 2 0 0 -8 0 0 V < 5 m A The S 0405 series silicon controlled rectifiers are high performance glass


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    PDF 347S0 000D725 S0405BH -S0405NH S0405 S040SBH S0405DH S0405MH S0405NH 67xVDRM S0405NH S0405DH TAG SCR

    P0105AB

    Abstract: SCR P0105 P0105AB-P0105DB P0105BB P0105CB P0105DB
    Text: TAG SEMICONDUCTORS 8834750 T AG b3 LTD S E MI C ONDUC T ORS LTD ~ 63C TAG SEMICONDUCTORS LTD D eT| AA347SO ODOObTM 1 Ó0 6 9 4 D Í P0 1 0 5 A B P0105DB S C R 'S 0 .8 A R D 26 G 1 0 0 -4 0 0 V 2 0 -5 0 pA The P0105 series silicon controlled rectifiers are high performance planar


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    PDF 347S0 OOOObc14 P0105AB-P0105DB 20-50pA P0105 P0105AB P0105BB P0105CB P0105DB 67xVDrm P0105AB SCR P0105 P0105DB

    CSA408

    Abstract: CSH640 CTH640
    Text: TO-220 Maximum Ratings DEVICE VDRM BGK. IT HUS it m VCRH Electrical Characteristics « IGR ISM lOuSmax PG(AV) 20mSmax IDRM O R G K .IK O tm s VT t (Ta=25°C, Uniass Otharwisa Spacifiad) IT VT(TO) rT 1ST VD VGT VD VD IH • RGK-IKOhms II 0 RGK*1K0hms IKOhms


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    PDF O-220 67xVDflM, CTH640 CSH640 10uSmax 20mSmax Vfe67xVDRM, CSA408

    E0102FB

    Abstract: E0102YB e0102 E0102AB TGD50 TAG SCR
    Text: SEMICONDUCTORS LTD 1 8 8 3 4 7 5 0 TAG S E MI C ON D UC T OR S b3 LTD DElafl3475D 63C 0 0 8 7 1 0000071 fl ' D "T“—ZU J E » " ' / E0102YB - TAG SEMICONDUCTORS LTD E0102AB F A S T S C R 'S 0 .8 A 30-100V < 2 0 0 hA T h e E0102 series silicon controlled


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    PDF fifl3475Q E0102YB E0102AB 200mA E0102 E0102YB E0102FB E0102AB 67xVdrm 850CVd TGD50 TAG SCR

    P0104BA

    Abstract: P0104AA P0104CA P0104DA SCR TAG Semiconductors
    Text: TAG S E M I C O ND UC TO RS LTD ti 8834750 TAG SEMICONDUCTORS LTD DE | fl¿134750 OOOObt.4 3 63C 00664 D T '& S -U P0104AAP0104DA SCR'S TAG S EM IC O N D U C T O R S LTD 0.8 A 100-400 V <50pA / The P0104 series silicon controlled rectifiers are high performance planar


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    PDF 347SD P0104AA-P0104DA P0104 P0104AA P0104BA P0104CA P0104DA 67xVDrm P0104DA SCR TAG Semiconductors

    M4013NP-M4013ZP

    Abstract: M4013 M4013NP M4013PP M4013VP M4013ZP TAG SCR
    Text: TAG SEM IC OND UC TO RS LTD ti 8834750 TAG SEMICQNDUCTORS LTD D F | ñ ñ 3 4 7 S D □□□0773 fl | D7 63C 00J73 M 4013N PM 4013ZP SCR'S TAG SEMICONDUCTORS LTD 40A 8 0 0 -1 4 0 0 V <50m A The M 4 0 1 3 series silicon controlled rectifiers are high performance mesa


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    PDF 347SD M4013NP-M4013ZP M4013 M4013NP M4013PP CtO125 M4013VP M4013ZP 67xVdrm 850CVd M4013VP M4013ZP TAG SCR

    S1005BH

    Abstract: S1005DH SCR PNPN S1005 S1005MH S1005NH
    Text: TAG SEM IC ON DUCT OR S LTD b3 8834-750 TAG SEMICONDUCTORS LTD DËT|flfl3475D 0DDD7M3 0 | 63C 00743 S1005BH S1005NH SCR'S 10A 2 0 0 -8 0 0 V < 5 m A TAG SEMICONDUCTORS LTD The S1005 series silicon controlled rectifiers are high performance glass passivated PNPN devices. These parts


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    PDF flfl3475D S1005BH -S1005NH S1005 S1005DH S1005MH S1005NH 67xVDrm SCR PNPN S1005NH

    P0101AB

    Abstract: P0101BB P0101CB P0101DB TAG SCR
    Text: 8834750 TAG SEMICONDUCTORS LT D _ 63C 006 90 TAG SEM IC O N D U C T O R S LTD P T ' ^ S “ // P0101AB P0101DB S C R 'S t / D e | flfl347SD DODGfalO 4 |~" WB TAG S EM IC ON DU CTOR S LTD 0.8 A 100-400 V 1-20 pA A The P0101 series silicon controlled rectifiers are high perform ance planar


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    PDF flfl347SD P0101AB -P0101DB P0101 P0101BB P0101CB P0101DB 67xVdrm P0101CB P0101DB TAG SCR

    P0100AA

    Abstract: P0100BA P0100CA P0100DA
    Text: TAG SEM IC ONDUC TO RS LTD h3 I Ê ïû û 347S D 63C 00660 8834750 TAG SEMICONDUCTORS LTD TAG SEMICONDUCTORS LTD OOOObtiO t> D 7"- ¿ 5"^ /> P 0 100A A P 0 100D A SC R 'S 0.8 A 1 00 -4 00 V < 2 0 pA The P0100 series silicon controlled rectifiers are high performance planar


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    PDF fi347SD P0100AA-P0100DA P0100 P0100AA P0100BA P0100CA P0100DA -67xVdrm 67xVdrm 35VIt P0100CA P0100DA

    F0810MH

    Abstract: F0810 F0810BH F0810DH F0810NH scr 40 a
    Text: TAG SEMICONDUCTORS LTD 8834750 TAG bl SEMICONDUCTORS LTD _ DF|flfl347S0 Q0D0fl73 1 63C 00873 D f ~ F0810BH F0810NH FAST SCR'S TAG S EM IC O N D U C TO R S LTD 8 .0 A 2 0 0 -8 0 0 V 10-25 m A T h e F0 8 1 0 se rie s s ilic o n c o n tro lled re c tifie rs are fast, g o ld d o p e d , g la s s


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    PDF B47SD F0810BH F0810NH 00-800V F0810 F0810DH F0810MH F0810NH 67xVDrm scr 40 a

    P0107CA

    Abstract: P0107 P0107AA P0107BA P0107DA
    Text: b3 TAG SE MI CONDU CT OR S LTD [8 8 3 4 7 5 0 TAG SEMICONDUCTORS LTD _ D € 1| ñ ñ B 4 7 S Q DDDDbtk 7 63C 0 066 6 TAG SEMICONDUCTORS LTD I P0107A AP 0 107D A SC R 'S • r 0.8 A 1 00 -4 00 V < 5 pA I The P0107 series silicon controlled rectifiers are high perform ance planar


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    PDF P0107AA -P0107DA P0107 P0107AA P0107BA P0107CA P0107DA 67xVdrm P0107BA P0107DA

    X0402DE

    Abstract: X0402 X0402BE X0402ME top glass SCR PNPN X0402NE TAG SCR X0402BE-X0402NE
    Text: . . „ X0402BEX0402NE SCR'S . 4 .0 A - G ^ A C A bsolute Maximum Ratings Ta = 2 5 °C unless otherwise noted Parameter Part Nr. Symbol Repetitive Peak Off State Voltage X0402BE X 0 4 0 2 D E f'V d r m I X 0 4 0 2 M E [.V r r m J X0402N E On-State Current


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    PDF X0402BE-X0402NE 200pA X0402 X0402BE X0402DE X0402ME X0402NE X0402BE X0402ME top glass SCR PNPN X0402NE TAG SCR

    CSA408

    Abstract: CSH640 CTH640
    Text: TO-220 SC R AND TRIACS I ru Maximum Ratings UJ □a UJ Ll I DEVICE VDRM RGK= IT RMS IT(AV) VGRM (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics IGR IGM lOuSmax PG(AV) 20 mS max IDRM 0 RGK=1K0hms VT 0 IT VT(TO) rT 6 IGT VD VGT 0 VD VD IH


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    PDF O-220 20mSmax 67xVDRM, VFU35V, CTH640 10uSmax CSA408 CSH640

    P0109

    Abstract: P0109DB P0109AB P0109BB P0109CB TAG SCR
    Text: TAG SE:11IC0NDUCT0RS LTD b3 8 8 3 4 7 5 0 TAG SEMICONDUCTORS LTD D e I 653^4750 DDOObi? _7 _1_' 63C 0 0 6 9 7 P0109ABP0109DB S C R 'S 0.8 A 100-400 V <1pA TAG SEMICONDUCTORS LTD The P0109 series silicon controlled rectifiers are high perform ance planar diffused PNPN devices. These parts


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    PDF P0109AB-P0109DB P0109 P0109AB P0109BB P0109CB P0109DB -67xVDrm 67xVdrm P0109DB TAG SCR

    S1207BH

    Abstract: S1207MH s1207dh S1207NH S1207M S1207 TAG 0/S1207BH TAG SCR S1207 SCR TAG
    Text: 8834750 T AG W3 LTD SE MI CONDUCT ORS LTD' DE^jj S A3 M75 0 63C 00749 . S1207BHS1207NH SCR S TAG SEMICONDUCTORS LTD 12 A c ^ G A A b so lu te M ax im u m R atin gs Ta = 25 °C unless otherwise noted Parameter Part Nr. Symbol Repetitive Peak Off State Voltage


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    PDF fl3M750 S1207BH -S1207NH S1207 S1207DH S1207MH S1207NH Cto125Â 67xVDRM S1207NH S1207M S1207 TAG 0/S1207BH TAG SCR SCR TAG

    S1210

    Abstract: S1210BS S1210DS S1210MS MIL-STD-105D tag 200-600
    Text: S1210BS S1210MS S C R 'S TAG SEMICONDUCTORS LTD 12 A 2 0 0 -6 0 0 V 10-25 mA The S1210 series silicon controlled rectifiers are high performance glass passivated PNPN devices. These parts are intended for hybrid applications. Part Nr. Symbol Repetitive Peak


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    PDF S1210BS -S1210MS S1210 S1210DS S1210MS 67xVDrm MIL-STD-105-D, S1210MS MIL-STD-105D tag 200-600