TIC682

Abstract: HC682 kd 617 SN54HC682 SN54HC684 SN74HC682 SN74HC684 pq11 hc1011
Contextual Info: SN54HC682, SN54HC684 SN74HC682, SN74HC684 8 BIT MAGNITUDE COMPARATORS 19 8 4 -R E V IS peiS E P T E M B E R 19 8 7 0280' S N 54H C 682^«M 54H C 684 . D W O ft N ^ A C K A G I S N 74H C 682, S N 74H C 684 Compares Two 8-Bit Words 'H C 682 has 100-kil Pullup Resistors on the

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL21A684KOFNNNE • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 16V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 684 K O F N N N E ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21B684KOFNFNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 16V, ±10%, X7R, 0805 A. Samsung Part Number ① Series CL 21 B 684 K O F N F N E ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL05A684KQ5NNNC • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 6.3V, ±10%, X5R, 0402 A. Samsung Part Number ① Series CL 05 A 684 K Q 5 N N N C ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21B684KOFNNNG  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 16V, ±10%, X7R, 0805 A. Samsung Part Number ① Series ② Size CL 21 B 684 K O F N N N G ①

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL10B684KO8NFNC  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 16V, ±10%, X7R, 0603 A. Samsung Part Number ① Series ② Size CL 10 B 684 K O 8 N F N C ①

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31B684KAHNNNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 25V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size CL 31 B 684 K A H N N N E ①

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21B684KPFNNNG  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 10V, ±10%, X7R, 0805 A. Samsung Part Number ① Series ② Size CL 21 B 684 K P F N N N G ①

J 5027 r

Abstract: wf 105j WFA105J KA 5815 225J cap
Contextual Info: TH IR D ANGLE PR O JEC TIO N [ I T E M CODE ECWF 2 W5 6 4 KA u 2W6 8 4 KA // 2W8 2 4 KA u 2W1 0 5 KA // 2W1 2 5 K A // 2W1 5 5 K A n 2W1 8 5 KA // 2 W2 2 5 K A u 2W2 7 5 KA // 2W3 3 5 KA n 2 W3 9 5 K A // 2 W4 75KA CAP . uF * 0 .5 6 (564) 0.68 (684) 0. 8 2 (824 )

A18E

Abstract: TAG D2 Q.E D61 A12E a18e 40 TAG 88 tag13 CY2305 CYM76S683 CYM76S684
Contextual Info: fax id: 2044 : . m i'im m m n k ¿¡¡¡¡¡¡¡¡¡¡*£^ : : ; i : : : js j’5“ : M M M : M M M : : : p ^ ^ PRELIMINARY CYM76S683/684 512K/1M L2 Cache Module for Power PC Systems Features • High-performance cache modules based on synchronous 64K x 18 data BSRAM

475 10v

Abstract: 684 k 100 224 K capacitor Mj333 473 capacitor J273K MJ-82-2
Contextual Info: 3181 text layout 4/21/01 10:41 AM Page 46 KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25

224 K capacitor

Abstract: kemet capacitor C0603 EIA481-1 j 182 capacitor 334 ceramic U 821 B C0402 C0805 561 6.3v C1206
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

capacitor C0402 50V X7R

Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

capacitor 334

Abstract: kemet capacitor C0603 473 Z 2 capacitor 685 473 Z 2 capacitor 224 capacitor 473 capacitor 684 k 100 capacitor 334 ceramic
Contextual Info: 3181 text layout 4/21/01 10:41 AM Page 46 KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

mj11015 equivalent

Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

kemet capacitor C0603

Abstract: capacitor 334 Kemet capacitors c0603 c0805 c1206 capacitor 334 ceramic C1206 KEMET C1206 KEMET packaging kemet capacitor C0805 IEC60286-6 Kemet capacitors c0603 EIA481-1
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

kemet capacitor C0603

Abstract: Cap 0603 X7R 473 Z 2 capacitor capacitor 334 ceramic
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

ST431

Abstract: CDR32BX682 CERAMIC CHIP/MIL-PRF-55681 CERAMIC CHIP/MIL-PRF-123
Contextual Info: 3181 text layout 4/21/01 10:41 AM Page 46 KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

IC 3526

Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc