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    Untitled

    Abstract: No abstract text available
    Text: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:


    OCR Scan     		WS512K32BV-XCJCE 512Kx32 68-lead, 512Kx32; 1Mx16 WS512K32BV-XCJCE 68LEADJLCC WS512K32BV-XC 512K32 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming


    OCR Scan     		EDI7C32128C 128Kx32 EDI7C32128C 128Kx8 200ns I7C32128C120JM I7C32128C150JM I7C32128C200JM PDF

    512Kx8 bit Low Power CMOS Static RAM

    Abstract: No abstract text available
    Text: ^EDI EDI8C32512CA M ELECTRONIC DESIGNS. INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C32512CA, a high speed, high performance, four megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs mounted in a package.


    OCR Scan     		18C32512CA 512Kx32 EDI8C32512LP 68leadJLCC, EDI8C32512CA20JM EDI8C32512CA20JI 01581USA EDI8C32512CA 512Kx8 bit Low Power CMOS Static RAM PDF