Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFH69N30P
IXFT69N30P
200ns
O-247
O-268
100ms
69N30P
0-16-09-A
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CEP75A3
Abstract: No abstract text available
Text: CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP75A3/CEB75A3
O-263
O-220
O-263
O-220
CEP75A3
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IXTQ69N30P
Abstract: IXTT69N30P
Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300
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IXTT69N30P
IXTQ69N30P
O-268
063in)
100ms
IXTQ69N30P
IXTT69N30P
69N30P
0-16-09-A
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s69a
Abstract: IXTQ69N30P IXTT69N30P TO-3P
Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300
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IXTT69N30P
IXTQ69N30P
O-268
063in)
100ms
69N30P
0-16-09-A
s69a
IXTQ69N30P
IXTT69N30P
TO-3P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300
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IXTT69N30P
IXTQ69N30P
O-268
100ms
69N30P
0-16-09-A
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E4362A
Abstract: LED Solar Simulator Information and list of solar panels modules solar panels in satellites E4367A E4360 14360A E4361A E4368A E4360A
Text: Agilent E4360 Modular Solar Array Simulators Models: E4360-62A, E4367-69A Datasheet • Accurate simulation of any type of solar array • Small size: up to 2 outputs in 2U of rack space • High output power – up to 600 W per output • Fast I-V curve change and fast recovery switching time
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E4360
E4360-62A,
E4367-69A
5989-8485EN
E4362A
LED Solar Simulator Information and
list of solar panels modules
solar panels in satellites
E4367A
14360A
E4361A
E4368A
E4360A
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63d54
Abstract: 1e23
Text: Datas h eet 1 2333 4 4 567 8 9 69A B C D A 6E B F 69D F B D 68 A A A 69 DF D FB 3 6DDA69DABFB 6D 6 DF AD 12 ;2< +B9#368* D 6D7%3AD !" %
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7399D$
D6DA68B
122D-3
DA893(
7D55D$
7D5856B7
7D0487D$
7D638
6D774
63d54
1e23
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diode 300v
Abstract: IXFH69N30P IXFT69N30P
Text: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFH69N30P
IXFT69N30P
200ns
O-247
O-268
100ms
69N30P
0-16-09-A
diode 300v
IXFH69N30P
IXFT69N30P
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FDA69N25
Abstract: No abstract text available
Text: TM UniFET FDA69N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FDA69N25
FDA69N25
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FDA69N25
Abstract: No abstract text available
Text: TM UniFET FDA69N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FDA69N25
FDA69N25
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1E14
Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
Text: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance
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FSGYC164R
FSGYC164R
1E14
2E12
FSGYC164D1
FSGYC164R4
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYC164R
FSGYC164R
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ISD 1720
Abstract: ON5040 FDA69N50
Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 m Features Description • RDS on = 41 m (Max.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA69N25
FDA69N25
FDA69N50
ISD 1720
ON5040
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FDAF69N25
Abstract: No abstract text available
Text: UniFET TM FDAF69N25 250V N-Channel MOSFET Features Description • 34A, 250V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)
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FDAF69N25
FDAF69N25
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smd diode marking 69a
Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated
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SPP80N06S2L-06
SPB80N06S2L-06
Q67060-S6033
2N06L06
Q67060-S6034
BSPP80N06S2L-06
BSPB80N06S2L-06,
smd diode marking 69a
DIODE led SMD 5050
2N06L06
ANPS071E
SPB80N06S2L-06
SPP80N06S2L-06
32F120
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ
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IXTQ69N30PM
100ms
69N30P
0-16-09-A
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2N06L06
Abstract: smd diode marking 69a smd marking code G16 Q67060S60
Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 R DS on 6.3 m ID 80 A P- TO263 -3-2 175°C operating temperature V P- TO220 -3-1 Avalanche rated dv/dt rated Type SPP80N06S2L-06
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SPP80N06S2L-06
SPB80N06S2L-06
Q67060-S6033
Q67060-S6034
2N06L06
BSPP80N06S2L-06
BSPB80N06S2L-06,
smd diode marking 69a
smd marking code G16
Q67060S60
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D1314
Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics
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SN75207,
SN75207B
SLLSQ69A-
D1314,
SN75107A
SN75107B
10-mV
SN55109A,
SN75109A,
D1314
SN75361
207B
SN75207
SN55109A
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Untitled
Abstract: No abstract text available
Text: I i H AMER .PHILIPS/DISCRETE SSE D • bbS3T31 0050Q13 T ■ BDX69; 69A BDX69B; 69C T -s s -a ? DARLINGTON POWER TRANSISTORS N-P-N Darlingtons for audio output stages and general amplifier and switching applications, n TO-3' envelope. P-N-P complements are BDX68, BDX68A, BDX68B and BDX68C.
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bbS3T31
0050Q13
BDX69;
BDX69B;
BDX68,
BDX68A,
BDX68B
BDX68C.
BDX69
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BDX69
Abstract: z664 BDX68 BDX68A BDX68B BDX68C BDX69A BDX69B BDX69C T3329
Text: JL il N AMER .PHILIPS/DISCRETE 2SE D • IJl bbS3T31 - ^ uuc 0020013 . T ■ BDX69; 69A BDX69B; 69C T - 3 3 - Ä 7 DARLINGTON POWER TRANSISTORS N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BDX68, BDX68A, BDX68B and BDX68C.
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bbS3131
BDX69;
BDX69B;
-33-a?
BDX68,
BDX68A,
BDX68B
BDX68C.
BDX69
z664
BDX68
BDX68A
BDX68C
BDX69A
BDX69B
BDX69C
T3329
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upd4066
Abstract: uPD4069 cs1m UPD75P036 imo inverter cd 750 P7073 RA75X UPD75208CW US5A13RA75X uPD75028
Text: DATA SHEET MOS INTEGRATED CIRCUIT //PD75028 A 4 - B IT S IN G L E -C H IP M IC R O C O M P U T E R The inform ation in this document is subject to change w ith o u t notice. Document No. (0. D. No. IC—3168A IC—86 69A) Date Published February 1993 P Printed in Japan
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uPD75028
IC--3168A
IC--86
uPD75P036
upd4066
uPD4069
cs1m
imo inverter cd 750
P7073
RA75X
UPD75208CW
US5A13RA75X
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BDX69
Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
Text: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A
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BDX69;
BDX69B;
BDX68,
BDX68A,
BDX688
BDX68C.
BDX69
transistor handbook
BDX68
BDX68A
BDX68C
BDX69B
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upd4069
Abstract: upd4066 imo inverter cd 750 invertor UPD75208CW US5A13RA75X uPD75028 uPD75028CW UPD75028GC UPD75P036
Text: DATA SHEET M O S INTEGRATED C IR C U IT /¿PD75028 A 4-BIT S I N G L E - C H IP M I C R O C O M P U T E R T h e in fo rm a tio n in this d o cum e nt is subject to change w ith o u t notice. Document No. (0. D. No. IC—3168A IC—86 69A) Date Published February 1993 P
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uPD75028
IC--3168A
IC--86
upd4069
upd4066
imo inverter cd 750
invertor
UPD75208CW
US5A13RA75X
uPD75028CW
UPD75028GC
UPD75P036
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1N295
Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Text: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT
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1N66A
at-10V
-100V
1N68A
at-100V
1N70A
1N81A
1N87A
1N295
1N294
1N90
ln297
1N135
1n69
1N75
1N128
in67a
1N67
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