6B smd
Abstract: SMD 6b
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APHBM2012CGKSYKC Green Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.45mm max. thickness. The Green source color devices are made with AlGaInP on z Bi -color, low power consumption. GaAs substrate Light Emitting Diode.
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APHBM2012CGKSYKC
2000pcs
APHBM2012CGKSYKC
DSAG8825
JAN/03/2013
6B smd
SMD 6b
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTL3216CGCK Green Features Description z 3.2mmx1.6mm SMT LED, 1.1mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.
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APTL3216CGCK
2000pcs
accor04562
APTL3216CGCK
DSAH3793
JAN/06/2013
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Untitled
Abstract: No abstract text available
Text: 2.8X0.8mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KA-2810ACGSK Green Features Description z 2.8mmX0.8mm right angle SMT LED, 1.2mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode.
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KA-2810ACGSK
2000pcs
su/21/2013
DSAK2459
MAR/21/2013
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTL3216SYCK Super Bright Yellow Features Description z 3.2mmx1.6mm SMT LED, 1.1mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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APTL3216SYCK
2000pcs
DSAH3799
MAR/18/2013
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Untitled
Abstract: No abstract text available
Text: 2.8X0.8mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KA-2810ACGSK Green Features Description z 2.8mmX0.8mm right angle SMT LED, 1.2mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode.
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KA-2810ACGSK
2000pcs
DSAK2459
MAR/21/2013
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SMD ZENER DIODE u6
Abstract: QR15V QR-27 SMD diode U5 smd UJ SMD ZENER DIODE u5 3b zener diode SMD diode 0402 SMD diode 1B SMD zener diode 7.5 b
Text: SMD Zener Diode SMD Diodes Specialist CZRQR2V4B Thru CZRQR39VB RoHS Device Voltage 2.4 to 39 Volts Power 125 mWatts 0402(1005) Features 0.041(1.05) 0.037(0.95) 125mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface.
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CZRQR39VB
125mW
MIL-STD-750
QR/0402
QW-A2016
SMD ZENER DIODE u6
QR15V
QR-27
SMD diode U5
smd UJ
SMD ZENER DIODE u5
3b zener diode
SMD diode 0402
SMD diode 1B
SMD zener diode 7.5 b
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SMD DIODE u4v
Abstract: SMD ZENER DIODE u6 SMD diode U5 SMD ZENER DIODE u5 CZRU2 IR diodes 0B ZENER 200 mW smd SMD zener diode 7.5 b
Text: SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB RoHS Device Voltage 2.4 to 39 Volts Power 150 mWatts Features 0603(1608) 0.071(1.80) 0.063(1.60) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. Designed for mounting on small surface.
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CZRU39VB
150mW
MIL-STD-750
U/0603
QW-A2004
SMD DIODE u4v
SMD ZENER DIODE u6
SMD diode U5
SMD ZENER DIODE u5
CZRU2
IR diodes 0B
ZENER 200 mW smd
SMD zener diode 7.5 b
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SMD ZENER DIODE u6
Abstract: SMD ZENER DIODE u5 SMD ZENER DIODE U8 smd diode UJ 56 A QR15V smd diode Uj smd diode UM 09 smd diode UJ 09 diode smd 1b zener diode 8.2 v smd
Text: SMD Zener Diode SMD Diodes Specialist CZRQR2V4B-HF Thru CZRQR39VB-HF RoHS Device Voltage 2.4 to 39 Volts Power 125 mWatts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. 125mW Power Dissipation. 0.026(0.65) 0.022(0.55) High Voltages from 2.4 ~ 39 V.
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CZRQR39VB-HF
125mW
MIL-STD-750
QR/0402
QW-G2013
SMD ZENER DIODE u6
SMD ZENER DIODE u5
SMD ZENER DIODE U8
smd diode UJ 56 A
QR15V
smd diode Uj
smd diode UM 09
smd diode UJ 09
diode smd 1b
zener diode 8.2 v smd
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ER6V
Abstract: er3v ER12V SMD ZENER DIODE u6 ER4V diode smd 1b smd diode UJ 09 SMD ZENER DIODE U8 3b zener diode zener u5
Text: SMD Zener Diode SMD Diodes Specialist CZRER2V4B Thru CZRER39VB RoHS Device Voltage 2.4 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface.
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CZRER39VB
150mW
MIL-STD-750
ER/0503
QW-A2011
ER6V
er3v
ER12V
SMD ZENER DIODE u6
ER4V
diode smd 1b
smd diode UJ 09
SMD ZENER DIODE U8
3b zener diode
zener u5
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode SMD Diodes Specialist CZRER2V4B Thru CZRER39VB RoHS Device Voltage 2.4 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface.
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CZRER39VB
150mW
MIL-STD-750
ER/0503
QW-A2011
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SMD ZENER DIODE u5
Abstract: SMD DIODE u4v zener 7.5 B 39 SMD SMD ZENER DIODE u6 SMD zener diode 7.5 b CZRU2 smd zener 7.5 B smd Uj smd diode Uj smd diode UF
Text: SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts 0603 1608 Features 0.071(1.80) 0.063(1.60) 150mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.039(1.00) 0.031(0.80) Designed for mounting on small surface.
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CZRU39VB
150mW
MIL-STD-750
U/0603
QW-A2004
SMD ZENER DIODE u5
SMD DIODE u4v
zener 7.5 B 39 SMD
SMD ZENER DIODE u6
SMD zener diode 7.5 b
CZRU2
smd zener 7.5 B
smd Uj
smd diode Uj
smd diode UF
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ER12V
Abstract: ER6V smd diode Uj SMD diode U5 SMD ZENER DIODE u6 IR diodes 0B smd code HF transistor zener u5 SMD 6b SMD ZENER DIODE u5
Text: SMD Zener Diode SMD Diodes Specialist CZRER2V4B-HF Thru CZRER39VB-HF RoHS Device Voltage 2.4 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) Halogen free. 150mW Power Dissipation. 0.034(0.85) 0.026(0.65) High Voltages from 2.4 ~ 39 V.
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CZRER39VB-HF
150mW
MIL-STD-750
ER/0503
QW-A2006
ER12V
ER6V
smd diode Uj
SMD diode U5
SMD ZENER DIODE u6
IR diodes 0B
smd code HF transistor
zener u5
SMD 6b
SMD ZENER DIODE u5
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APTD1608CGCK Green Features Description 1.6mmX0.8mm SMT LED, 0.95mm thickness. The Green source color devices are made with AlGaInP on Low power consumption. GaAs substrate Light Emitting Diode. Wide viewing angle.
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APTD1608CGCK
2000pcs
DSAJ6852
APR/01/2014
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APHCM2012CGCK-F01 Green Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Green source color devices are made with AlGaInP on Low power consumption. GaAs substrate Light Emitting Diode. Wide viewing angle.
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APHCM2012CGCK-F01
2000pcs
DSAF1341
DEC/05/2013
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Untitled
Abstract: No abstract text available
Text: 3.0x2.0mm SURFACE MOUNT LED LAMP Part Number: KA-3021SGS Super Bright Green Features Description z 3.0mm x 2.0mm, 1.3mm high, only minimum space The Super Bright Green source color devices are made with required. Gallium Phosphide Green Light Emitting Diode.
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KA-3021SGS
2000pcs
DSAK8268
APR/11/2013
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Untitled
Abstract: No abstract text available
Text: 3.0x2.0mm SURFACE MOUNT LED LAMP Part Number: AA3021SGS Super Bright Green Features Description z 3.0mm x 2.0mm, 1.3mm high, only minimum space The Super Bright Green source color devices are made with required. Gallium Phosphide Green Light Emitting Diode.
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AA3021SGS
2000pcs
DSAL0109
OCT/11/2013
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Untitled
Abstract: No abstract text available
Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
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CHE1270-QAG
5-44GHz
CHE1270-QAG
E1270
YYWW11
CHE1270
12343546761839A12346BC1D
DSCHE1270-QAG0329
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SMD 6b
Abstract: 6B smd diode
Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612YSGC-F01 Yellow Super Bright Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Yellow source color devices are made with Gallium z Bi-color, low power consumption. Arsenide Phosphide on Gallium Phosphide Yellow Light
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APTB1612YSGC-F01
2000pcs
JUN/01/2012
APTB1612YSGC-F01
DSAE7243
SMD 6b
6B smd diode
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SMD 6b
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608QWF/D White ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The source color devices are made with InGaN Light Emit-
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APT1608QWF/D
2000pcs
APT1608QWF/D
DSAH2468
OCT/23/2012
SMD 6b
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015ZGC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Green source color devices are made with InGaN
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KPL-3015ZGC
2000pcs
DEC/27/2011
DSAG6404
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012QBC-D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Blue source color devices are made with InGaN Light
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KPHCM-2012QBC-D
2000pcs
HCM-2012QBC-D
DSAE6004
MAR/30/2013
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Untitled
Abstract: No abstract text available
Text: 3x2.4mm SMD CHIP LED LAMP Part Number: KP-23ZGC-F Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3mmx2.4mm SMT LED, 1.05mm thickness. The Green source color devices are made with InGaN z Low power consumption.
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KP-23ZGC-F
2000pcs
DSAH0909
MAR/30/2013
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Untitled
Abstract: No abstract text available
Text: 3.2x2.4mm SMD CHIP LED LAMP Part Number: APD3224ZGC-F01 Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Green source color devices are made with InGaN
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APD3224ZGC-F01
1500pcs
DSAH3735
MAR/29/2013
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: APL3015QBC/D-F01 Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Blue source color devices are made with InGaN Light
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APL3015QBC/D-F01
2000pcs
DSAH3777
MAR/16/2013
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