Untitled
Abstract: No abstract text available
Text: PCB High Density 6D-1Cx0N0-52 PRODUCT DESCRIPTIONS In order to meet high density market demand, 1 Form C SPDT relay has been added to 6D high temperature operating series. Since SPDT contact form allows double the density in tree-circuit. Suitable for Load board applications and high density switching matrix.
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6D-1Cx0N0-52
6D-1C10N0-52
2000Hz
0N0-52
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Untitled
Abstract: No abstract text available
Text: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
D-74025
11-Aug-04
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FE6D
Abstract: diode 6d 50
Text: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
08-Apr-05
FE6D
diode 6d 50
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diode 6d 50
Abstract: No abstract text available
Text: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
18-Jul-08
diode 6d 50
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Untitled
Abstract: No abstract text available
Text: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
D-74025
11-Aug-04
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FE6D
Abstract: No abstract text available
Text: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
08-Apr-05
FE6D
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Untitled
Abstract: No abstract text available
Text: A710-6D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.20G P(D) Max. (W)2.0 Semiconductor MaterialSilicon Package StylePin Mounting StyleS
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A710-6D
Voltage60
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Untitled
Abstract: No abstract text available
Text: 681-6D Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10 @Temp. (øC) (Test Condition)25’
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681-6D
Current15
Voltage600
Current10u
Current200u
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Untitled
Abstract: No abstract text available
Text: 689-6D Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current15 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10
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689-6D
Current15
Voltage600
Time500n
Current10u
Current200u
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Untitled
Abstract: No abstract text available
Text: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 December 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
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PMEG6002ELD
OD882D
DFN1006D-2)
AEC-Q101
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nxp Standard Marking
Abstract: No abstract text available
Text: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
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PMEG6002ELD
OD882D
DFN1006D-2)
AEC-Q101
nxp Standard Marking
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smd diode 6D
Abstract: No abstract text available
Text: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 3 May 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
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PMEG6002ELD
OD882D
DFN1006D-2)
AEC-Q101
smd diode 6D
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pj969
Abstract: PJ 96
Text: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • High Arm Short Circuit Capability • hFEA^&i,' High DC Current Gain •7' J ' J FfajBL Including Freewheeling Diode • Ifei¥klte Insulated Type
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I95t/R89
Shl50
pj969
PJ 96
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T1596
Abstract: 6DE4 I960 r7hr general electric IT-T1596
Text: 6D E4 6DE4 IT-T1596 Page 1 DIODE TUBES 2 -6 0 FOR TV DAMPING DIODE APPLICATIONS = DESCRIPTION AND RATING = The 6DE4 is a single heater-cathode-type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. BASING DIAG RAM
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IT-T1596
approximate91'
K-556
T1596
6DE4
I960
r7hr
general electric
IT-T1596
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ZX24
Abstract: ZX27 ZX12 ZX7.5 ZX13 ZX5.1 "104 srk zx 55 ZX4.7 ZX16
Text: 6d \ ducretg jemiconDuaoR ZX3.9 . . . Z X 2 0 0 12.5 W1 in o u m y « Silicon PowerZeritrr Diodes for use* in stabilizing and clipping circuits with high power rating. I he 2yru;r voltages are graded according to the international T 24 standard. Sm aller voltage to leran ces on request.
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ZX200
ZX24
ZX27
ZX12
ZX7.5
ZX13
ZX5.1
"104 srk
zx 55
ZX4.7
ZX16
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noise diode generator
Abstract: noise generator tube oscilloscope noise diode thyratron tube operation thyratron tube thyratron
Text: w SYLVANIA SYLVANIA engineering data service 6D4 QUICK REFERENCE DATA MECHANICAL DATA T he Sylvania T ype 6D 4 is a m in iature triode thyratron intended for use as a relay tube or wide band noise generator. B u l b . T -5j^
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5v 10mA reed relay
Abstract: diode 6D 6D-1A10D0 A 4714 8 PIN
Text: DB LCCTRO comm s ätmomws ELECTRONIC COMPONENTS Ultraminiature Reed Relays 6D and 6R are ultra-compact and lightweight reed relays which has narrow mounting space and easy to use. Besides, they are optimal for compacting equipments. 7D is the world's smallest miniature reed relays, which has
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6D-1A10D0
2-12VDC
5v 10mA reed relay
diode 6D
6D-1A10D0
A 4714 8 PIN
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6DI30M-120
Abstract: M613 T760 VE60
Text: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • • hFEA^&i,' High Arm Short Circuit Capability High DC Current Gain • 7 ' J ' J FfajBL 11 |e J Including F re e w h e e lin g Diode • Ifei¥klte Insulated Type
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6DI30M-1
E82988
l95t/R89
Shl50
6DI30M-120
M613
T760
VE60
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smd diode 6D
Abstract: SMD diode KL smd diode ww 1 3q marking diode smd diode 600v 1a DE5L60 marking 6D smd diode dp 3q smd marking diode
Text: Super Fast Recovery Diode Single Diode WWW OUTLINE Package : E-pack DE5L60 U nit! mm Weight 0.326g Typ M 600V 5A ï'2'4 Feature • SMD • SMD • High Voltage • trr-50ns • trr-50ns i.m v f ^ 5 I — 6D — 01 Main Use • PFC • PFC(Power Factor Correction)
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DE5L60
trr-50ns
J532-1)
smd diode 6D
SMD diode KL
smd diode ww 1
3q marking diode
smd diode 600v 1a
DE5L60
marking 6D
smd diode dp
3q smd marking diode
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B426A
Abstract: 6DI50M120 6DI50M-120 T151 T760 T810
Text: 6D I50M -120 5 oa '< n — v ^ ± /< 7 =l — )v : Outline Drawings P O W ER T R A N S IS T O R M O D U L E •45JI: : Features • u High Arm Short Circuit Capability • hFE*x'f i l ' High DC Current Gain • 7U— —KrtHS Including Freewheeling Diode
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6DI50M-120
E82988
l95t/R89
B426A
6DI50M120
T151
T760
T810
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Gex DIODE
Abstract: No abstract text available
Text: 6D I50M -050 50 a IW f i T t i i • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : Applications • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply
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l95t/R89
Gex DIODE
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B166
Abstract: 6DI50M-050
Text: 6D I50M -050 50 a IW fiT tii • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : A p p lic a tio n s • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply
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6DI50M-050
E3Ti5S35^
19S24
l95t/R89
B166
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F30L
Abstract: No abstract text available
Text: STS6DNF30L DUAL N - CHANNEL 30V - 0 .022 & - 6A SO-8 STripFET POWER MOSFET TYPE V STS 6D N F30L d s s 30 V R d S o ii < 0.025 Q. Id 6 A . TYPICAL R D S (on) = 0.022 £2 . STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY . LOW THRESHOLD DRIVE
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STS6DNF30L
F30L
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Diode DO12
Abstract: 1N3875 1N3878 1N3874 1N3879 1N3880 1N3883 05g100 do12
Text: 3869720 GENERAL D I O D E CORP g 6D GENERÄL DIODE CORP fit. 00331 D DE | 3 0 ^ 7 5 0 D000331 0 | FAST RECOVERY RECTIFIERS o * Ä % 0 ‘S TYPE w » l y , —- y 50 100 200 *300 400 6 @ 100 6 @ 100 6 @ 100 6 @ 100 6 @ 100 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6
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1N3874
1N3S75
1N387S
Do-10
1N3B77
1N3878
DO-10
1N3879
1N3880
Diode DO12
1N3875
1N3883
05g100
do12
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