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    Toshiba America Electronic Components MG25Q6ES50A

    SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA MG25Q6ES50A 40
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    6ES50A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

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    Text: TOSHIBA TENTATIVE 6ES50A TO SH IBA GTR M O D U LE SILICON N C HANNEL IGBT M G1 5 Q 6ES50A HIGH P O W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		MG15Q6ES50A 6ES50A 961001EAA1 --10V PDF