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    6MBP75RTB060 Search Results

    6MBP75RTB060 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6MBP75RTB060 Fuji Electric IPM-R3 series 600V / 75A 6 in one-package Original PDF
    6MBP75RTB060 Fuji Electric 600V / 75A 6 in one-package Original PDF

    6MBP75RTB060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 6MBP75RTB060 600V / 75A 6 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original
    PDF 6MBP75RTB060

    6mbp75

    Abstract: No abstract text available
    Text: 6MBP75RTB060 600V / 75A 6 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original
    PDF 6MBP75RTB060 6mbp75

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original
    PDF REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現!


    Original
    PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120

    6MBP75RTB060

    Abstract: AC200V AC2500 HCPL4504 P610 P611 fuji ipm
    Text: b 1.Package Outline Drawings Package type : P610 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4 ±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16


    Original
    PDF MS6M0652 H04-004-03 6MBP75RTB060 AC200V AC2500 HCPL4504 P610 P611 fuji ipm