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    6N20E Search Results

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    6N20E Price and Stock

    Rochester Electronics LLC MTD6N20E1

    N-CHANNEL POWER MOSFET
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    DigiKey MTD6N20E1 Bulk 2,418
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    onsemi MTD6N20ET4G

    MOSFET N-CH 200V 6A DPAK
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    Newark MTD6N20ET4G Cut Tape 2,500
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    Bristol Electronics MTD6N20ET4G 200
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    Win Source Electronics MTD6N20ET4G 3,005
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    onsemi MTD6N20ET5G

    MOSFET N-CH 200V 6A DPAK
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    OMRON Industrial Automation E2Q6-N20E3-H

    SENSOR PROX INDUCT 20MM IP67 MOD
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    DigiKey E2Q6-N20E3-H Bulk 1
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    Newark E2Q6-N20E3-H Bulk 1
    • 1 $366.8
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    onsemi MTD6N20E1

    - Bulk (Alt: MTD6N20E1)
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    Avnet Americas MTD6N20E1 Bulk 4 Weeks 1
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    Newark MTD6N20E1 Bulk 2,680
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    Rochester Electronics MTD6N20E1 2,418 1
    • 1 $0.1365
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    Find more 6N20E price and stock on Findchips.com

    6N20E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n20eg

    Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg
    Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original     		PDF MTD6N20E MTD6N20E/D n20eg 6N20E 369D AN569 MTD6N20E 6n20eg

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    AN569

    Abstract: MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
    Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast


    Original     		PDF MTD6N20E r14525 MTD6N20E/D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e

    n20eg

    Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
    Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD6N20E MTD6N20E/D n20eg 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4

    N20E

    Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
    Text: 6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast


    Original     		PDF MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e

    Untitled

    Abstract: No abstract text available
    Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original     		PDF MTD6N20E MTD6N20E/D

    Untitled

    Abstract: No abstract text available
    Text: 6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original     		PDF MTD6N20E MTD6N20E/D

    6n20e

    Abstract: mosfet 4532 4532 MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TM OS E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy


    OCR Scan     		PDF