P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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MSP SNCP
Abstract: No abstract text available
Text: TXC-06406 PHAST -6P ® Multi-Rate PHY/Framer for Data Networks KEY BENEFITS Industry-leading transport solution PHAST family of products Fully compliant with SONET/SDH standards Reduced software development effort Reduced space, power and cost Faster Time-To-Market
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TXC-06406
16-Bit
P/N06406-1/06
MSP SNCP
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J112
Abstract: j113 J111
Text: Discrete POWER & Signal Technologies i I S E M iC D N P U C T Q R MMBFJ111 MMBFJ112 MMBFJ113 J ill J112 J113 G T O -9 2 S D Mark: 6P / 6 R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced
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MMBFJ111
MMBFJ112
MMBFJ113
MMBFJ111
MMBFJ112
J112
j113
J111
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MB02
Abstract: Power One PMP 6p power switching
Text: Photoelectrics Retro-reflective, Polarized, Transistor Output Type PMP • Range: 6 m • Modulated, visible light, polarized • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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schematic diagram 180v dc motor speed controller
Abstract: No abstract text available
Text: Centrifugal Fans direct driven with scroll Issue 1.3 November 2012 2 The overall picture will decide Complete systems by Nicotra Gebhardt Depending on the model of the fan, the efficiency grade “N” set in accordance with the ErP Directive must be achieved from 2013 and
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efficient111
Sector-31
Noida-201
schematic diagram 180v dc motor speed controller
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MCR03PZPZD7502
Abstract: MCR03PZPZD2202 mcr03pzpz GRM188B31A225K 2959M MCR03PZPZD6802 4.5V to 100V input regulator BD6590MUV
Text: BD6590MUV LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type BD6590MUV No.11040EBT14 ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can
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BD6590MUV
11040EBT14
BD6590MUV
25MHz)
MAX30mA/ch)
R1120A
MCR03PZPZD7502
MCR03PZPZD2202
mcr03pzpz
GRM188B31A225K
2959M
MCR03PZPZD6802
4.5V to 100V input regulator
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mcr03pzpz
Abstract: BD6150 D6590 BD6590MUV grm31cb31e106k GRM21BB31 VQFN024V4040 GRM219B31H334K MCR03PZPZD2202 4.5V to 100V input regulator
Text: LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type No.10040EAT14 BD6590MUV ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can
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10040EAT14
BD6590MUV
BD6590MUV
25MHz)
MAX30mA/ch)
R1010A
mcr03pzpz
BD6150
D6590
grm31cb31e106k
GRM21BB31
VQFN024V4040
GRM219B31H334K
MCR03PZPZD2202
4.5V to 100V input regulator
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MCR03PZPZD2202
Abstract: 2A132 4.5V to 100V input regulator
Text: LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type BD6590MUV No.11040EBT14 ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can
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BD6590MUV
11040EBT14
BD6590MUV
25MHz)
MAX30mA/ch)
R1120A
MCR03PZPZD2202
2A132
4.5V to 100V input regulator
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889R-F3ACA-2
Abstract: 889nf3afc6f 871ZC-BW5N18-R3 889N-F3AFC-6F qd 803 889R BW10C
Text: Inductive Proximity Sensors Bulletin 871ZC Teflon-Coated Plastic Face/Threaded Copper Barrel Description Bulletin 871ZC inductive proximity sensors are self-contained, solid state switching devices designed to sense the presence of metal objects ferrous and nonferrous without touching them.
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871ZC
871ZC
20UNF
889R-F3ACA-2
889nf3afc6f
871ZC-BW5N18-R3
889N-F3AFC-6F
qd 803
889R
BW10C
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30V 20A power p MOSFET
Abstract: Transistor Mosfet N-Ch 30V SPC6602 SPC6602ST6RG
Text: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6602
SPC6602
30V 20A power p MOSFET
Transistor Mosfet N-Ch 30V
SPC6602ST6RG
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SPC6604ST6RGB
Abstract: SPC6604 SPC6604ST6RG
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RGB
SPC6604ST6RG
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se 140
Abstract: power supply 48v 100a SE-600-27 SE-600-48 SE-600-24 180-264VAC 48v 100a SE-600-12 SE-600-15 SE-600-5
Text: 600W Single Output Switching Power Supply CASE: 926A 247x 127x 63.5 mm • AC input range selectable by switch • Protections: Short circuit / Overload / Over voltage / Over temp. • Built-in remote sense function • High power density 4.9 W/in 3 • Forced air cooling by built-in DC fan
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132VAC
264VAC
115VAC,
230VAC
UL60950-1
EN55022
3P/10mm,
6P/13mm
SE-600-5
SE-600-12
se 140
power supply 48v 100a
SE-600-27
SE-600-48
SE-600-24
180-264VAC
48v 100a
SE-600-12
SE-600-15
SE-600-5
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Untitled
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide 8 2 7 5 0 Revised 6-95 AMP Dynamic D-3Q0Q Series Connectors Wire-to-Board or (Wire-to-Wire) Product Facts • Connector system designed for exclusive use with I/O and power circuits in the power and control boards of heavy electric
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D-3000
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disconnector switch
Abstract: CSA22 iK07 25A3P EN 60947-3 2M252
Text: Complete switch disconnectors 25 to 100 A IP 40 as standard, IP 65 on request and IP66 on enclosure version with integral handle version Grey presentation > ENCLOSURES Characteristics p. 306 INTEGRAL PADLOCKABLE PRESENTATION Cat. No. 150 Safety switch to disconnect and isolate poles.
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10andles
disconnector switch
CSA22
iK07
25A3P
EN 60947-3
2M252
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SPC6604
Abstract: SPC6604ST6RG N and P MOSFET
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RG
N and P MOSFET
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SPC6601
Abstract: SPC6601ST6RG 6P marking TSOP 6 marking 52 N and P MOSFET
Text: SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6601
SPC6601
SPC6601ST6RG
6P marking
TSOP 6 marking 52
N and P MOSFET
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SPC6602ST6RG
Abstract: SPC6602 N and P MOSFET
Text: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6602
SPC6602
SPC6602ST6RG
N and P MOSFET
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sf x033h
Abstract: X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y
Text: Final version 99.4.30 1.1GHZ DUAL PLL KB8825 INTRODUCTION 16−TSSOP−0044 The KB8825 is a high performance dual frequency synthesizer with two integrated high frequency pre-scalers for RF operation up to 1.1 GHz. The KB8825 is composed of modulus pre-scalers providing 64 and
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KB8825
16-TSSOP-0044
KB8825
16-TSSOP
consumpt00
sf x033h
X033H
KA8532
C4228
KSC1623-Y
11GHz VCO
R272
1n1001
SGM2016
ksc1623y
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103B03
Abstract: 2 Pole 5 Position Rotary Switch miniature 2 Pole 5 Position Rotary Switch "10 positions" rotary switch 8 pole rotary switches 4 Pole Rotary Switch 304B04 "7 positions" rotary switch
Text: RBP12 Series 1-6 Pole Miniature Rotary Switches Features/Benefits • Rotary switch for low current • Shaft perpendicular to PCB • Index mechanism included in Typical Applications • Medical • Instrumentation • Appliances thickness of switch • Several actuation modes
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RBP12
103B03
2 Pole 5 Position Rotary Switch miniature
2 Pole 5 Position Rotary Switch
"10 positions" rotary switch
8 pole rotary switches
4 Pole Rotary Switch
304B04
"7 positions" rotary switch
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