Untitled
Abstract: No abstract text available
Text: MX573BBB156M250 Ultra-low Jitter 156.25MHz LVDS XO ClockWorks FUSION General Description Features The MX573BBB156M250 is an ultra-low phase jitter XO with LVDS output optimized for high line rate applications. • 156.25MHz LVDS • Typical phase noise:
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MX573BBB156M250
25MHz
MX573BBB156M250
-80fs
875MHz-20MHz)
50ppm
10G/12G
MX573BB1-1841
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Untitled
Abstract: No abstract text available
Text: MX573BBB156M250 Ultra-low Jitter 156.25MHz LVDS XO ClockWorks FUSION General Description Features The MX573BBB156M250 is an ultra-low phase jitter XO with LVDS output optimized for high line rate applications. • 156.25MHz LVDS • Typical phase jitter:
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MX573BBB156M250
25MHz
MX573BBB156M250
-80fs
875MHz-20MHz)
50ppm
10G/12G
MX573BB1-1827
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marking GX SOT23-6
Abstract: 6pin MARKING B1
Text: PI5A4157 |
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PI5A4157
PI5A4157
PI5A4157CE
PI5A4157TAE
PI5A4157ZUE
SC70-6
OT23-6
PT0386-2
marking GX SOT23-6
6pin MARKING B1
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AS1361
Abstract: AS1362 J-STD-020D TSOT23
Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 1 General Description 2 Key Features The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
140mV
300mA
100Hz
100kHz
AS1361/AS1362
150/300mA
140mV
AS1361
AS1362
J-STD-020D
TSOT23
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AS1361
Abstract: AS1362 TSOT23
Text: AS1361/AS1362 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 1 General Description 2 Key Features The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
140mV
300mA
100Hz
100kHz
AS1361/AS1362
150/300mA
140mV
AS1361
AS1362
TSOT23
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Untitled
Abstract: No abstract text available
Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 2 Key Features 1 General Description The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
AS1361/AS1362
150/300mA
140mV
300mA
100Hz
100kHz
140mV
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AS1361
Abstract: AS1362 TSOT23 marking aaa 6pin
Text: AS1361/AS1362 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 1 General Description 2 Key Features The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
140mV
300mA
100Hz
100kHz
AS1361/AS1362
150/300mA
140mV
AS1361
AS1362
TSOT23
marking aaa 6pin
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Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com
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AS1361/AS1362
150mA/300mA,
AS1361/AS1362
150/300mA
140mV
300mA
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KTC801F
Abstract: TFS6 transistor rank Y 6pin
Text: SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B Thin fine pitch super mini 6pin. B1 Excellent temperature response between these 2 transistor. C 6 2 5 3 4 D A 1 A1 The follwing characteristics are common for Q1, Q2.
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KTC801F
KTC801F
TFS6
transistor rank Y 6pin
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B Thin fine pitch super mini 6pin. B1 Excellent temperature response between these 2 transistor. C 6 2 5 3 4 D A 1 A1 The follwing characteristics are common for Q1, Q2.
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KTC801F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B ・Thin fine pitch super mini 6pin. B1 ・Excellent temperature response between these 2 transistor. C 6 2 5 3 4 D A 1 A1 ・The follwing characteristics are common for Q1, Q2.
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KTC801F
Voltag00
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PI5A3157BC6E
Abstract: PI5A3157B NC7SB3157 SC70-6 Low Voltage SPDT
Text: PI5A3157B |
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PI5A3157B
PI5A3157B
12-ohms
PI5A3157BZUE
PI5A3157BC6E
SC70-6
PT0353-2
PI5A3157BC6E
NC7SB3157
SC70-6
Low Voltage SPDT
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pericom date code marking
Abstract: mux spdt udfn6
Text: PI5A3157B |
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PI5A3157B
PI5A3157B
12-ohms
PI5A3157BZUE
PI5A3157BC6E
SC70-6
PT0353-2
pericom date code marking
mux spdt udfn6
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Untitled
Abstract: No abstract text available
Text: PI5A3157B |
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PI5A3157B
PI5A3157B
PI5A3157BZUE
PI5A3157BC6E
SC70-6
PT0353-3
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ASM3P2872A
Abstract: ASM3P2872AF-06OR ASM3P2872AF-08SR ASM3P2872AF-08ST ASM3P2872AF-08TR ASM3P2872AF-08TT
Text: ASM3P2872A October 2005 rev 1.6 Low Power Peak EMI Reducing Solution Features The ASM3P2872A uses the most efficient and optimized modulation profile approved by the FCC and is Generates an EMI optimized clock signal at the implemented by using a proprietary all digital method.
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ASM3P2872A
ASM3P2872A
13MHz
30MHz
ASM3P2872AF-06OR
ASM3P2872AF-08SR
ASM3P2872AF-08ST
ASM3P2872AF-08TR
ASM3P2872AF-08TT
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KRC859F
Abstract: KRC857F KRC858F
Text: SEMICONDUCTOR KRC857F~KRC859F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A Simplify Circuit Design. A1 C With Built-in Bias Resistors. D C Reduce a Quantity of Parts and Manufacturing Process.
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KRC857F
KRC859F
KRC858F
KRC857F
KRC859F
KRC858F
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Untitled
Abstract: No abstract text available
Text: PI5A3157B |
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PI5A3157B
PI5A3157B
PI5A3157BC6E
SC70-6
PT0353-4
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KRA757F
Abstract: KRA727F KRA729F KRA758F KRA759F
Text: SEMICONDUCTOR KRA757F~KRA759F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A Simplify Circuit Design. A1 C With Built-in Bias Resistors. D C Reduce a Quantity of Parts and Manufacturing Process.
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KRA757F
KRA759F
KRA758F
KRA757F
KRA727F
KRA729F
KRA758F
KRA759F
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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marking b1
Abstract: 6pin MARKING B1
Text: IMB1A Transistor, digital, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: B1 • package contains two independent PNP digital transistors (DTA124EKA), each with two resistors same size as SMT3 (SMT, SC-59), so
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SC-74)
DTA124EKA)
SC-59)
marking b1
6pin MARKING B1
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b10n
Abstract: No abstract text available
Text: UM B10N I M B 1 OA Transistor, digitai, dual, PNP, with 2 resistors Dimensions Units : mm Features available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB10N and IMB10A; B10 UMB10N (UMT6) I t . 3 2 : 0. 1 I 0.65 I package contains two independent
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SC-74)
UMB10N
IMB10A;
DTA123JKA)
SC-70)
SC-59)
UMB10N
IMB10A
-100nA
UMB10N,
b10n
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transistor marking TN SC-95
Abstract: No abstract text available
Text: UMB11N IMB11A Transistor, digital, dual, PNP, Features Dimensions Units : mm with 2 resistors • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMB11N and IMB11A; B11 • package contains two independent PNP digital transistors (DTA114EKA),
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UMB11N
IMB11A
SC-74)
IMB11A;
DTA114EKA)
SC-70)
SC-59)
UMB11N
transistor marking TN SC-95
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KOASS015
Abstract: 6-pin 33M marking 91mk T472 RKC10R
Text: RESISTOR N E T W O R K SIP T H IC K FILM KOASS015 -|T — No. of Pins . «•max. mm in. :< O 5 6 7 8 9 to 11 12 13 13.2 15.8 18.3 20.9 23.4 25.9 28.5 31.0 33.6 36.1 1.020 1.122 1.220 1.323 1.421 0.520 0.622 0.720 0.823 0.921 i\ SPEER ELECTRONICS, INC. RATING
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KOASS015
10-PIN
11-PIN
12-PIN
13-PIN
14-PIN
RKC-0691
6-pin 33M marking
91mk
T472
RKC10R
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