6pin vhz
Abstract: 1038 GE EIAJ-SC74
Text: ▼yTelCom T P A R T 1 , 1 N ew Product D ata Sheets Semiconductor, inc. _ TC1037/1038/1039 Linear Building Block - Single Comparators in SOT Packages FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1037/1038/1039 are single, low-power com
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TC1037/1038/1039
TC1037/1038
TC1039.
TC1038
6pin vhz
1038 GE
EIAJ-SC74
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Untitled
Abstract: No abstract text available
Text: LM V981 ,LM V 982 LMV981 Single / LMV982 Dual 1.8V, RRIO Operational Amplifiers with Shutdown Texa s In s t r u m e n t s Literature Number: SNOS976K t if Sem iconductor October 13, 2010 LMV981 S in gle /L M V 9 8 2 Dual 1.8V, RRIO Operational Amplifiers with Shutdown
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LMV981
LMV982
SNOS976K
/LMV982
LMV981/LMV982
LMV981/
200mV
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Untitled
Abstract: No abstract text available
Text: SM73304, SM73305 SM73304 SM73305 Dual and Single Precision, 17 MHz, Low Noise, CMOS Input Amplifiers with Enable Te x a s In s t r u m e n t s Literature Number: SNOSB98 I1 Texas In s t r u m e n t s Dual and Single Precision, 17 MHz, Low Noise, CMOS Input
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SM73304,
SM73305
SM73304
SM73305
SNOSB98
73304/SM73305
SM73304/SM73305
SM73304/SM73305
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Untitled
Abstract: No abstract text available
Text: L M P 7 7 1 1 ,LM P 7712 LMP7711/LMP7712 Single and Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifiers Te x a s In s t r u m e n t s Literature Number: SNOSAP4E Sem iconductor LMP7711/LMP7712 Single and Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifiers
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LMP7711/LMP7712
LMP7711/LMP7712
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GN02018B
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply
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GN02018B
820MHz
950MHz,
-10dBm
-30dBm
GN02018B
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SFH291
Abstract: No abstract text available
Text: S F H 2910 FA SIEM EN S Silicon Photodiode Dimensions in inches mm .271(6.9) Area not flat 7248(6.3) .020(0.5) j . 012(0.3) Radiant sensitive area .016+(0.4) r,ui:.ri_. -J,_ L ._ ♦047(1.2) * "*1)24(0.6) .016(0.4) It 157(4.0) 1.34(34) 1.26(32) Approx. weight 0.25g
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ge006651
18-pln
fl535t
SFH291
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SFH100
Abstract: smd 6PIN "vhz" SFH 110
Text: SFH 100 SIEMENS High Blue Sensitivity Silicon Photodiode Dimensions in inches mm ^3.0) .491 (12.5) 020 (.5) .452(11.5) .444(11.3) .028 (.7) .020 (.5) .086 (2.2) .075(1.9) I 128(3.25) |.120(3.05) .138(3.5) .118(3.0) .014 (.35) .008 (.20) .499 (12.7) spacing
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GE0060B7
app300
18-pln
fl535t
SFH100
smd 6PIN "vhz"
SFH 110
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Untitled
Abstract: No abstract text available
Text: SFH 216 SIEMENS Silicon PIN Photodiode Dimensions in inches mm .291 (7.4) .259 (6.6) .208 (5.3) 197 (5.0) .571 (14.5) .492 (12.5) Cathode T 0.189(4.8) ¥ 0.100 (2.54) 0.181 4.6) _L A .018 (0.45) .106 (2.7) 1Glass Lens Chip Location , 220 (5.6), .208 (5.3)
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GE006314
18-pln
fl535t
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10 35L DIODE
Abstract: No abstract text available
Text: SIEMENS SFH 291 High UV Sensitivity Silicon Photodiode Dimensions in inches mm .200 228 (5.8) 0.326(8.3) 0.314(8.0) Anode (5.08) .236 (6.0) 134 (3.4) Ì 18 (3.0) .570(14.5) .491 (12.5) -l X f 0 .018 (0.45) Characteristics Ta=25°C, Std. Light A, T=2856 K
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2856K
18-pln
fl535t
10 35L DIODE
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6pin vhz
Abstract: smd 6PIN "vhz"
Text: SIEMENS BPY12 Silicon PIN Photodiode FEATURES • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 25 ns Dimensions in inches (mm) .204(5.2)1 .197 (5.0)1 t .204(5.2) .197(5.0) APPLICATIONS • Industrial electronics
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18-pln
fl535t
6pin vhz
smd 6PIN "vhz"
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Untitled
Abstract: No abstract text available
Text: SIEMENS B P X 65 Silicon Photodiode Dimensions in inches mm .216(5.5) 197 (5.0) .570(14.5) .492(12.5) .200 (5.3) .197(5.0) H 0.100 (2.54) 0.018(0.45) 0 .1 8 9 (4.8) 0 .181 ( 4 .6 ) ' .106 (2.7) Radiant sensitive area Chip Location 218(5.6). .208 (5.3) GET06013
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GET06013
18-pln
fl535t
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smd 6PIN "vhz"
Abstract: SIEMENS Germanium
Text: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600
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GE006314
18-pln
fl535t
smd 6PIN "vhz"
SIEMENS Germanium
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 221 Silicon Differential Photodiode D im e n s io n s in in c h e s m m R adiant sensitive area .570(14.5) .491 (12.5) , .200 (5 .08 )c 0.020 (.5) 0.016 ( .4 ) G round Isolated C athode C hip Location GE006639 FEATURES • Especially suitable for applications from
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GE006639
T-2856
18-pln
fl535t
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PDF
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Bpx 95
Abstract: bpx61
Text: SIEMENS BPX61 Silicon Photodiode Dimensions in inches mm .134 (3.4) '.118(3.0) .570 (14.5) .491 (12.5) Cathode Radiant sensitive area \ 0 .373 (9.5) 0 .354 (9.0) 0 .326 (8.3) 0 .314(8.0) .200 (5.08) Jr 0.236 (6.0) 0.228 (5.8) L .L T“ c 0 .018(0.45) .069(1.75)
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BPX61
18-pln
fl535t
Bpx 95
bpx61
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPX 60 Enhanced Blue Sensitivity Silicon Photodiode D im ensions in inches m m .134 (3.4) .118 (3.0) .570(14.5) .491 (12.5) Radiant sensitive area C athode 0 .373 (9.5) 0 .354 (9.0) 0 .326 (8.3) 0 .314 (8.0) .200 (5.08) 0.236 (6.0) 0.228 (5.8) L
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18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: SIEMENS B P X 63 Very Low Dark Current Silicon Photodiode APPLICATION • Exposure meters, automatic exposure timers DESCRIPTION The BPX 6 3 is a silicon pla n a r p ho tod iod e , m o un ted on a T 0 1 8 base p la te a n d covered w ith tra n s p a re n t p la stic. The BPX 6 3 h as been
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985x0
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: BPX 48 BPX 48F SIEMENS DAYLIGHT FILTER Silicon Differential Photodiode Dimensions in inches mm .159(4.05) I .147 (3.75) I H 0e to 5° Cathode uauiuub / ?4 _ noR Lead spacing n 6 2) ~ T .096 (2.45) idre" DESCRIPTION The differential photodiode BPX 48 is designed for special industrial electronic
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18-pln
fl535t
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PDF
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Untitled
Abstract: No abstract text available
Text: L M H 6 6 1 8 ,L M H 6 6 1 9 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Texa s In s t r u m e n t s Literature Number: SNOSAV7C Sem iconductor LM H 6618 S in g le /L M H 6 6 1 9 Dual 130 M Hz, 1.25 m A RR IO O pera tio n al A m p lifie rs
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LMH6618
Single/LMH6619
LMH6618
LMH6619
LMH6619
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SOT23-6 AAAE
Abstract: MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA
Text: 19-1230; Rev 2; 6/97 J V Y Æ X A J V K 1GHz, Low-Power, SO T23, C urrent-Feedback A m plifiers w ith Shutdow n The MAX4223-MAX4228 are ideal for professional video applications, with differential gain and phase errors of 0.01% and 0.02°, 0.1 dB gain flatness of 300MHz, and a
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MAX4223-MAX4228
MAX4223/MAX4224/MAX4226/MAX4228
350pA
MAX4223/
MAX4225/MAX4226
10pMAX
MAX4223/MAX4224
MAX4225-MAX4228
4223-M
MAX4224EUT-T
SOT23-6 AAAE
MAX4223
IN-87
la sot23-8 analog
MH SOT23-8
av 8114
MAX4223ESA
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PDF
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1436Y
Abstract: No abstract text available
Text: SG1536/SG1436 SILICON LINEAR INTEGRATED CIRCUITS HIGH-VOLTAGE OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The S G 1 536 se rie s of m o no lith ic am plifiers is desig n ed specifically fo r use in high vo ltag e app licatio n s up to ± 4 0 V and w here high
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SG1536/SG1436
-SG1536
MIL-STD-883
1536Y
1436Y
1436Y
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PDF
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5534D
Abstract: 5533N ne5533n ZT04 TL083 NE5533AN NE5534AD 5534 amp 5534A NE5533D
Text: PHILIPS INTERNATIONAL SßE D • 711Gfl2b DDSDÖD1 SG4 H P H I N Philips Semiconductors-Signetics Linear Products Hroauci specmcaiion M c c c q q /c c q q A / Dual and single low noise op amp NE/SA/SE5534/5534A i o DESCRIPTION FEATURES The 5533/5534 are dual and single
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711Gfl2b
NE5533/5533A/
NE/SA/SE5534/5534A
TL083,
zT04k
NE5533/5533A/
7110fl2b
5534D
5533N
ne5533n
ZT04
TL083
NE5533AN
NE5534AD
5534 amp
5534A
NE5533D
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PDF
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00E7 6pin
Abstract: 6pin vhz 004 SOT23-6 BF SOT23-6 01B SOT23 MAX4223ESA
Text: 19-1230; R ev 0; 4 /9 7 A1>1XIAI iVM LAÔÎÎ 1GHz, L o w - P o w e r , SOT23, Current-Feedback Amplifiers with Shutdown The MAX4223-MAX4228 current-feed back amplifiers combine ultra-high-speed performance, low distortion, and excellent video specifications with low-power oper
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MAX4223,
600MHz
MAX4224,
700V/jis
MAX4224)
MAX4223)
300MHz
-60dBc
10MHz)
00E7 6pin
6pin vhz
004 SOT23-6
BF SOT23-6
01B SOT23
MAX4223ESA
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PDF
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S49b
Abstract: No abstract text available
Text: 19-1230; R ev 2 a ; 5 /9 7 A1>1XIAI iVMLA 1GHz, L o w - P o w e r , SOT23, Current-Feedback Amplifiers with Shutdown The MAX4223-MAX4228 current-feed back amplifiers combine ultra-high-speed performance, low distortion, and excellent video specifications with low-power oper
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MAX4223,
600MHz
MAX4224,
700V/jis
MAX4224)
MAX4223)
300MHz
-60dBc
10MHz)
S49b
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PDF
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LX P-852
Abstract: max4110 6pin vhz AAAC SOT23-8 MAX4180ESA MAX4181
Text: 19-1221; Rev 1,8/97 V M ^ X IV M Single/Dual/Quad9 270M H z, 1mA, SO T23, C urrent-Feedback Am plifiers w ith Shutdow n The MAX4180-M AX4187 feature 0.08%/0.03° differen tial gain and phase errors, a 20ns settling time to 0.1%, and a 450V/ps stew rate, making them ideal for highp e rfo rm a n c e v id e o a p p lic a tio n s . The M AX4180/
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270MHz
MAX4181/84/85/87)
50V/ps
70MHz
MAX41B0/82/B3/86)
-73dBc
MAX4180/81)
10-Pin
MAX4183/85)
16-Pin
LX P-852
max4110
6pin vhz
AAAC SOT23-8
MAX4180ESA
MAX4181
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