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    6R125P TRANSISTOR Search Results

    6R125P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    6R125P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125 PDF

    6r125p

    Abstract: transistor 6R125P PG-TO-247-3-1
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P PG-TO-247-3-1 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82 PDF

    6r125p

    Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
    Text: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability


    Original     		IPA60R125CP PG-TO220 SP000095275 6R125P 6r125p transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode
    Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode PDF

    DF 331 TRANSISTOR

    Abstract: 6r125p 6R125 transistor df 331 transistor 6R125P
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R125CP PG-TO220-3-31 SP000095275 6R125P DF 331 TRANSISTOR 6r125p 6R125 transistor df 331 transistor 6R125P PDF

    6r125p

    Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125 PDF

    6r125p

    Abstract: No abstract text available
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p PDF

    IPB60R125CP

    Abstract: 6r125p
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 SP000088488 6R125P IPB60R125CP 6r125p PDF

    6r125p

    Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220-3-1 SP000088488 6R125P 6r125p transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP PDF

    6r125p

    Abstract: 6R125
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 SP000088488 6R125P 6r125p 6R125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82
    Text: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R125CP PG-TO220 PG-TO262 6R125P 6r125p transistor 6R125P 6R125 IPI60R125CP JESD22 CA82 PDF

    6R125

    Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 IPP60R125CP PG-TO220 SP000088488 6R125P 6R125 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R PDF