3 phase rectifier thyristor bridge
Abstract: modules diode/thyristor
Text: STD/SDT70 Thyristor-Diode Modules, Diode-Thyristor Modules Type STD/SDT70GK08 STD/SDT70GK12 STD/SDT70GK14 STD/SDT70GK16 STD/SDT70GK18 STD/SDT70GK20 STD/SDT70GK22 STD/SDT70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM
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STD/SDT70
STD/SDT70GK08
STD/SDT70GK12
STD/SDT70GK14
STD/SDT70GK16
STD/SDT70GK18
STD/SDT70GK20
STD/SDT70GK22
STD/SDT70GK24
3 phase rectifier thyristor bridge
modules diode/thyristor
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M5 DIODE 22-35
Abstract: STT70 STT70GK08 STT70GK12 STT70GK14 STT70GK18
Text: STT70 Thyristor-Thyristor Modules Type STT70GK08 STT70GK12 STT70GK14 STT70GK16 STT70GK18 STT70GK20 STT70GK22 STT70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM
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STT70
STT70GK08
STT70GK12
STT70GK14
STT70GK16
STT70GK18
STT70GK20
STT70GK22
STT70GK24
M5 DIODE 22-35
STT70
STT70GK08
STT70GK12
STT70GK14
STT70GK18
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STT100GK12
Abstract: "AC Motor" M5 DIODE 22-35 STT100 STT100GK08 STT100GK14
Text: STT100 Thyristor-Thyristor Modules Type STT100GK08 STT100GK12 STT100GK14 STT100GK16 STT100GK18 STT100GK20 STT100GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800
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STT100
STT100GK08
STT100GK12
STT100GK14
STT100GK16
STT100GK18
STT100GK20
STT100GK22
180oC
STT100GK12
"AC Motor"
M5 DIODE 22-35
STT100
STT100GK08
STT100GK14
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thyristor-diode
Abstract: SDT1001 Sdt-100
Text: STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT100GK08 900 STD/SDT100GK12 1300 STD/SDT100GK14 1500 STD/SDT100GK16 1700 STD/SDT100GK18 1900 STD/SDT100GK20 2100 STD/SDT100GK22 2300 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM
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STD/SDT100
STD/SDT100GK08
STD/SDT100GK12
STD/SDT100GK14
STD/SDT100GK16
STD/SDT100GK18
STD/SDT100GK20
STD/SDT100GK22
1445ssipation
thyristor-diode
SDT1001
Sdt-100
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M5 DIODE 22-35
Abstract: SSAC70 SSAC70GK08 SSAC70GK12 SSAC70GK14
Text: SSAC70 Solid State AC Controller Anti-Parallel Thyristor-Thyristor Modules Type SSAC70GK08 SSAC70GK12 SSAC70GK14 SSAC70GK16 SSAC70GK18 SSAC70GK20 SSAC70GK22 SSAC70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM
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SSAC70
SSAC70GK08
SSAC70GK12
SSAC70GK14
SSAC70GK16
SSAC70GK18
SSAC70GK20
SSAC70GK22
SSAC70GK24
M5 DIODE 22-35
SSAC70
SSAC70GK08
SSAC70GK12
SSAC70GK14
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3 phase rectifier thyristor bridge
Abstract: M5 DIODE 22-35 SSAC100 SSAC100GK08 SSAC100GK12 SSAC100GK14 Anti-Parallel Thyristor
Text: SSAC100 Solid State AC Controller Anti-Parallel Thyristor-Thyristor Modules Type SSAC100GK08 SSAC100GK12 SSAC100GK14 SSAC100GK16 SSAC100GK18 SSAC100GK20 SSAC100GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM
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SSAC100
SSAC100GK08
SSAC100GK12
SSAC100GK14
SSAC100GK16
SSAC100GK18
SSAC100GK20
SSAC100GK22
180oC
3 phase rectifier thyristor bridge
M5 DIODE 22-35
SSAC100
SSAC100GK08
SSAC100GK12
SSAC100GK14
Anti-Parallel Thyristor
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Untitled
Abstract: No abstract text available
Text: STT70GKxxB Thyristor-Thyristor Modules Type STT70GK08B STT70GK12B STT70GK14B STT70GK16B STT70GK18B STT70GK20B STT70GK22B STT70GK24B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine
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STT70GKxxB
STT70GK08B
STT70GK12B
STT70GK14B
STT70GK16B
STT70GK18B
STT70GK20B
STT70GK22B
STT70GK24B
STT70B
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STT165GK22
Abstract: STT165GK16 STT165GK18 STT165 STT165GK08 STT165GK12 STT165GK14 VDR2
Text: STT165 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT165GK08 STT165GK12 STT165GK14 STT165GK16 STT165GK18 STT165GK20 STT165GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine
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STT165
STT165GK08
STT165GK12
STT165GK14
STT165GK16
STT165GK18
STT165GK20
STT165GK22
180oC
STT165GK22
STT165GK16
STT165GK18
STT165
STT165GK08
STT165GK12
STT165GK14
VDR2
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Untitled
Abstract: No abstract text available
Text: STT100GKxxB Thyristor-Thyristor Modules Type STT100GK08B STT100GK12B STT100GK14B STT100GK16B STT100GK18B STT100GK20B STT100GK22B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM
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STT100GKxxB
STT100GK08B
STT100GK12B
STT100GK14B
STT100GK16B
STT100GK18B
STT100GK20B
STT100GK22B
STD100B
STT100B
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CR diode transient
Abstract: No abstract text available
Text: STD/SDT165 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT165GK08 900 STD/SDT165GK12 1300 STD/SDT165GK14 1500 STD/SDT165GK16 1700 STD/SDT165GK18 1900 STD/SDT165GK20 2100 STD/SDT165GK22 2300 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM
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STD/SDT165
STD/SDT165GK08
STD/SDT165GK12
STD/SDT165GK14
STD/SDT165GK16
STD/SDT165GK18
STD/SDT165GK20
STD/SDT165GK22
1800dissipation
CR diode transient
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STT165GK12B
Abstract: STT165GK18B
Text: STT165GKxxB Thyristor-Thyristor Modules Type STT165GK08B STT165GK12B STT165GK14B STT165GK16B STT165GK18B STT165GK20B STT165GK22B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM
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STT165GKxxB
STT165GK08B
STT165GK12B
STT165GK14B
STT165GK16B
STT165GK18B
STT165GK20B
STT165GK22B
STD165B
STT165B
STT165GK12B
STT165GK18B
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FK18SM-10
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 500V
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FK18SM-10
150ns
FK18SM-10
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FK18SM-9
Abstract: 002 545 18 05
Text: MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 450V
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FK18SM-9
150ns
FK18SM-9
002 545 18 05
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VMO 440
Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Text: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)
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550-01F
650-01F
85-02F
C3-10
C3-14
C3-18
450-02F
500-02F
380-02F
400-02F
VMO 440
650-01F
1200NC
VMO 550-01F
ixys VMO 440
motor IG 2200 19 x 000 15 r
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120N20
Abstract: No abstract text available
Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
120N20
ID104
247TM
O-264
125OC
728B1
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120N20
Abstract: No abstract text available
Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
120N20
ID104
247TM
O-264
125OC
728B1
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120N20
Abstract: motor IG 2200 19 125OC ID104
Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
ID104
247TM
125OC
728B1
120N20
motor IG 2200 19
125OC
ID104
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
ID104
247TM
125OC
728B1
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motor IG 2200 19 00001
Abstract: 6v dc motor IG 2200 19 VMO500-02F C150
Text: MegaMOSTMFET Module VMO 500-02F VDSS = 200 V ID25 = 500 A RDS on typ = 3.5 mW D N-Channel Enhancement Mode G S KS D KS S Symbol Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient
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500-02F
VMO500-02F
motor IG 2200 19 00001
6v dc motor IG 2200 19
VMO500-02F
C150
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FK18SM-10
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: r Z J S G S -T H O M S O N TDA1151 MOTOR SPEED REGULATOR • E X C E L L E N T V E R S A T IL IT Y • H IG H O U T P U T C U R R E N T U P T O 800m A • L O W Q U IE S C E N T C U R R E N T • L O W R E F E R E N C E V O L T A G E (1 .2 V ) • EXC ELLEN T
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TDA1151
A1151
290r2
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SGSP311
Abstract: schematic diagram 110 V STEPPER MOTOR DRIVE
Text: / = 7 SGS-THOMSON * JÆ • ilO g (0 [lL[E(g?œMQ i SGSP311 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 ' V DSS ^DS(on) •d 100 V 0.3 fl 11 A • HIGH SPEED SWITCHING APPLICATIONS • 100V FOR DC/DC CONVERTERS • RATED FOR UNCLAMPED INDUCTIVE
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SGSP311
T0-220
SGSP311
schematic diagram 110 V STEPPER MOTOR DRIVE
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GC20930
Abstract: 6v dc motor IG 2200 19
Text: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C
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STP25N06
STP25N06FI
STP25N06FI
O-220
ISOWATT22Q
STP25N06/FI
GC20930
6v dc motor IG 2200 19
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213H
Abstract: No abstract text available
Text: TO SHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm
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2SK2886
14mil
10msi&
--45A,
213H
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