darlington array 2804
Abstract: ic base for 40 pin DIP ic IC 2804 darlington array MIC2803BN MIC2803 MIC2803BWM MIC2804 MIC2804BN MIC2804BWM
Text: MIC2803/2804 Micrel MIC2803/2804 High-Voltage High-Current Darlington Array Not Recommended for New Designs General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.
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MIC2803/2804
MIC2803
MIC2804
MIC2803/4
500mA,
18-pin
darlington array 2804
ic base for 40 pin DIP ic
IC 2804
darlington array
MIC2803BN
MIC2803BWM
MIC2804BN
MIC2804BWM
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CS-3710M15
Abstract: No abstract text available
Text: CS-3710 CS-3710 0.5A Fully Protected Dual H-Bridge Driver Description The CS-3710 is a smart dual 0.5A Hbridge driver used in microprocessor controlled stepper motor systems. The CS-3710 provides bidirectional current using two independent 0.5A H-bridge drivers. On chip commutation diodes
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CS-3710
CS-3710
CS-3710M15
CS-3710M15
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VN10K
Abstract: VN0106N3 VN10KN3-G sivn
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN10K
DSFP-VN10K
B031411
VN10K
VN0106N3
VN10KN3-G
sivn
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,
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VP2106
DSFP-VP2106
C082313
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2110 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and
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VP2110
VP2110
DSFP-VP2110
B082313
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0104
DSFP-VP0104
C082313
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VN0635
Abstract: VN0635N3 VN0635ND VN0640 VN0640N3 VN0640ND
Text: VN0635 VN0640 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-92 Die† 350V 10Ω 0.75A VN0635N3 VN0635ND 400V 10Ω 0.75A VN0640N3 VN0640ND † MIL visual screening available
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VN0635
VN0640
VN0635N3
VN0635ND
VN0640N3
VN0640ND
VN0635
VN0635N3
VN0635ND
VN0640
VN0640N3
VN0640ND
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702 TRANSISTOR sot-23
Abstract: 2N7002 MARKING 2N7002 MARKING 702 sot-23 MARKING CODE 70.2 2N7002 SOT-23 702 sot-23 2n7002 702 702 P TRANSISTOR code for 2n7002 125OC
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N7002
2N7002
DSFP-2N7002
A042507
702 TRANSISTOR sot-23
2N7002 MARKING
2N7002 MARKING 702
sot-23 MARKING CODE 70.2
2N7002 SOT-23
702 sot-23
2n7002 702
702 P TRANSISTOR
code for 2n7002
125OC
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0104
VP0104
DSFP-VP0104
B062211
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sivp VP0104
Abstract: 125OC VF15 VP0104 VP0104N3-G VP1504ND
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0104
VP0104
DSFP-VP0104
B030411
sivp VP0104
125OC
VF15
VP0104N3-G
VP1504ND
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP0109
VP0109
DSFP-VP0109
B061311
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP0106
VP0106
DSFP-VP0106
B061311
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VP0340N1
Abstract: VP0335 VP0340 VP0335N5 VP0335ND VP0340N5 VP0340ND
Text: VP0340 E– T E L O S – OB VP0335 VP0340 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-3 TO-220 Die† -350V 6.0Ω -1.5A — VP0335N5 VP0335ND -400V 6.0Ω -1.5A VP0340N1
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VP0340
VP0335
O-220
-350V
VP0335N5
VP0335ND
-400V
VP0340N1
VP0340N5
VP0340N1
VP0335
VP0340
VP0335N5
VP0335ND
VP0340N5
VP0340ND
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Untitled
Abstract: No abstract text available
Text: VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain The Supertex VN2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure
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VN2106
VN2106
DSFP-VN2106
A122308
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ZX5T853Z
Abstract: ZX5T853ZTA
Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T853Z
ZX5T853ZTA
ZX5T853Z
ZX5T853ZTA
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ZXTN
Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011G
OT223
OT223
ZXTN2011GTA
ZXTN2011GTC
ZXTN
ZXTN2011GTC
sot223 device Marking
ZXTN2011G
ZXTN2011GTA
Bv 42 transistor
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LM3526S
Abstract: LM3526M-H
Text: LM3526 Dual Port USB Power Switch and Over-Current Protection General Description Features The LM3526 provides Universal Serial Bus standard power switch and over-current protection for all host port applications. The dual port device is ideal for Notebook and desktop
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LM3526
5-Aug-2002]
LM3526S
LM3526M-H
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UC3637
Abstract: UC3638 UC3638 PLCC UC1638 UC2638 DIL-20 PLCC-20 SLUS290 SOIC-20 UC1637
Text: application INFO available UC1638 UC2638 UC3638 Advanced PWM Motor Controller FEATURES DESCRIPTION • Single or Dual Supply Operation • Accurate High Speed Oscillator • Differential X5 Current Sense Amplifier • Bidirectional Pulse-by-Pulse Current Limiting
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UC1638
UC2638
UC3638
UC1638
UC1637,
UC3637
UC3638
UC3638 PLCC
UC2638
DIL-20
PLCC-20
SLUS290
SOIC-20
UC1637
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marking 951
Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Text: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2012Z
Powe26100
marking 951
SOT89 transistor marking 5A
ZXTP2012Z
ZXTP2012ZTA
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ZX5T949Z
Abstract: ZX5T949ZTA SOT89 transistor marking 5A
Text: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T949Z
WIDTH11
ZX5T949Z
ZX5T949ZTA
SOT89 transistor marking 5A
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zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
522-ZXTP2008GTA
ZXTP2008GTA
zxtP
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: application INFO available UC2638 UC3638 Advanced PWM Motor Controller FEATURES DESCRIPTION • Single or Dual Supply Operation • Accurate High Speed Oscillator • Differential X5 Current Sense Amplifier • Bidirectional Pulse-by-Pulse Current Limiting
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UC2638
UC3638
UC2638
UC2637,
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Untitled
Abstract: No abstract text available
Text: M IC 2 8 0 3 /2 8 0 4 High-Voltage High-Current Darlington Array Not Recommended for New Designs General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.
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OCR Scan
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MIC2803
MIC2804
MIC2803/4
500mA,
18-pin
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UC3638 PLCC
Abstract: No abstract text available
Text: UC1638 UC2638 UC3638 y UNITRODE Advanced PWM Motor Controller FEATURES Single or Dual Supply Operation Accurate High Speed Oscillator Differential X5 Current Sense Amplifier Bidirectional Pulse-by-Pulse Current Limiting Programmable Oscillator Amplitude and PWM Deadband
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OCR Scan
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PDF
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500mA
UC1638
UC2638
UC3638
UC1637,
UC3638 PLCC
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