Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
44-pin
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62136ESL
44-pin
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Untitled
Abstract: No abstract text available
Text: S-2922AIF10 IL11 * C-MOS 2K 128x16 -BIT SERIAL EEPROM - TOP VIEW 5 1 NC 8 TEST IN 4 2 VDD GND 7 3 DI DO 6 SK CS TEST CS IN 3 6 DO OUT SK IN 4 5 DI IN 8 NOTE OPERATION READ WRITE VDD +1.8 to +6.5 V +2.7 to +6.5 V MEMORY ARRAY 128 X 16 BITS DATA REGISTER
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S-2922AIF10
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ST7687S-G4-3
Abstract: COM126 COM127 fm 4213 ic ST7687S
Text: ST7687S 128RGB x 128 dot 65K Color with Frame Memory Single-Chip STN Controller/Driver Datasheet Version 1.6 2010/02 Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. ST7687S 1. 2. 3. 4. 5. 6. 7. 8.
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ST7687S
128RGB
ST7687S-G4-2
ST7687S-G4-3
ST7687S-G4Shielding
ST7687S
ST7687S-G4-2.
COM126
COM127
fm 4213 ic
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OM117
Abstract: 1.5 128x128 CSTN LCD ge 3378 128x128 cstn 398825 cog lcm 116 niv5 1.5 128 CSTN LCD 128x128 lcd 4k colour OM113
Text: HIGH-VOLTAGE MIXED-SIGNAL IC 128 x 128RGB C-STN LCD Controller-Driver w/ 16-bit per RGB On-Chip SRAM ES Specifications Revision 0.6 February 7, 2007 ULTRACHIP The Coolest LCD Drive, Ever!! Specifications and information herein are subject to change without notice.
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128RGB
16-bit
UC1697v
128x128RGB
H20-58x453-22
OM117
1.5 128x128 CSTN LCD
ge 3378
128x128 cstn
398825
cog lcm 116
niv5
1.5 128 CSTN LCD
128x128 lcd 4k colour
OM113
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Untitled
Abstract: No abstract text available
Text: PCF8531 34 x 128 pixel matrix driver Rev. 7 — 12 December 2013 Product data sheet 1. General description The PCF8531 is a low-power CMOS1 LCD row and column driver, designed to drive dot matrix graphic displays at multiplex rates of 1:17, 1:26, and 1:34. Furthermore, it can drive
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PCF8531
PCF8531
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Untitled
Abstract: No abstract text available
Text: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time M Di ain sc te on na tin nc ue e/ d 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines)
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MN101E03G
16-bit)
QFP084-P-1818E
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MN101E03G
Abstract: MN101EF03G QFP084-P-1818E
Text: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time M Di ain sc te on na tin nc ue e/ d 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines)
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MN101E03G
16-bit)
QFP084-P-1818E
MN101E03G
MN101EF03G
QFP084-P-1818E
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Untitled
Abstract: No abstract text available
Text: MN101E02G Type MN101E02G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 18 K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) External (7 lines) Internal (15 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2, Teletext decoder × 2,
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MN101E02G
16-bit)
QFP084-P-1818E
10-bit
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Abstract: No abstract text available
Text: MN101E13G Type MN101E13G ROM x× 16-bit 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,
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MN101E13G
16-bit)
MN101E13G
QFP084-P-1818E
10-bit
14-bit
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MN101E13G
Abstract: MN101EF13G QFP084-P-1818E
Text: MN101E13G Type MN101E13G ROM x× 16-bit 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,
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MN101E13G
16-bit)
QFP084-P-1818E
10-bit
MN101E13G
MN101EF13G
QFP084-P-1818E
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D431000AGZ
Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is
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PD431000A
ThepPD431000A
576bits
vPD431OOOA
uPD431OOOA
32-pin
yPD431232L
013io
D431000AGZ
d431000a
UPD431OOOAGZ-7OLL-KKH
d431232
d431000ag
D431000
ypd431000a
D4310
d431000all
031T
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Untitled
Abstract: No abstract text available
Text: MN101E02G Type MN101E02G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 18 K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (15 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2, Teletext decoder × 2,
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MN101E02G
16-bit)
QFP084-P-1818E
10-bit
PX-PAC101E02-4W9J
MN101EF02G
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Untitled
Abstract: No abstract text available
Text: MN101E04G Type MN101E04G under development ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,
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MN101E04G
16-bit)
QFP084-P-1818E
10-bit
PX-PAC101E02-4W9J
MN101EF04G
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Untitled
Abstract: No abstract text available
Text: MN101E03G Type MN101E03G [ES Engineering sample available ] ROM (x× 16-bit) 128 K RAM (×× 16-bit) 4K Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 100 ns (at 3.135 V to 3.465 V, normal-mode) Interrupts External (7 lines) Internal (13 lines) : Timer × 4, A/D × 1, RESET × 1, OSD × 1, Serial × 2,
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MN101E03G
16-bit)
QFP084-P-1818E
10-bit
PX-PAC101E02-4W9J
MN101EF03G
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SN74S262N
Abstract: video character generator circuit diagram character generator TEXAS TELETEXT texas instruments teletext decoder XM-11 280NS texas instruments teletext
Text: SN74S262N ROW OUTPUT CHARACTER GENERATOR features High speed - 280ns character access time Lower power — 250mW Static operation 5760 bit capacity 128 characters of 45 bits 5x9 7 input character decoder 4 input row decoder Character format chosen to allow rounding on all characters
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SN74S262N
280ns
250mW
SN74S262N
XM-11.
video character generator circuit diagram
character generator
TEXAS TELETEXT
texas instruments teletext decoder
XM-11
texas instruments teletext
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Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices A m 2 7 C 1 2 8 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time Latch-up protected to 100 mA from -1 V to Vcc +1 V — 45 ns High noise immunity ■ Low power consumption Versatile features for simple interfacing
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28-pin
32-pin
Am27C128
128K-bit
KS000010
11420D-9
0034c
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2764 EPROM specification
Abstract: 27128 prom st 27128
Text: eeeo 2764 64K EPROM 27128 128K EPROM N ovem ber 1989 Pin Configuration Features • Fast Access Times at 0° to 70°C •2764 -1 6 0 ns ■ 2 7 128-2 0 0 ns ■ Programmed Using Intelligent Algorithm • 21 V VFP •2 Minutes for 27128 •1 Minute for 2764
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MD400010/A
2764 EPROM specification
27128 prom
st 27128
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Untitled
Abstract: No abstract text available
Text: INTL MICROCIRCUITS IMI INC CLOCK MAE 4650416 D G0Q0425 T - S ' <?-2 3 3bô • I M T IM ISC 12 8 CHIP October 1991 FEATURES DESCRIPTION ■ The IMl SC 128 has four independent programmable clocks. Each clock is programmable from 0.5 Mhz to 100 Mhz by a 13-bit-serial-word. First 8 bits 0 to 7
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G0Q0425
TEL408-263-6300
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HA1325
Abstract: No abstract text available
Text: FINAL AMDZ1 A m 2 7 C 1 28 128 Kilobit 16 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing
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28-pin
32-pin
27C128
128-Kbit,
16-038-SB-AG
Am27C128
16-038FPO-5
HA1325
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