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    700 H2A Price and Stock

    KOA Speer Electronics Inc RK73H2ATTD4700F

    Thick Film Resistors - SMD 1/4W 470 OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H2ATTD4700F 92,536
    • 1 $0.1
    • 10 $0.018
    • 100 $0.01
    • 1000 $0.008
    • 10000 $0.004
    		Buy Now

    KOA Speer Electronics Inc RK73H2ARTTD2700F

    Thick Film Resistors - SMD 1/4W 270 OHM 1% ANTI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H2ARTTD2700F 14,557
    • 1 $0.19
    • 10 $0.063
    • 100 $0.039
    • 1000 $0.031
    • 10000 $0.021
    		Buy Now

    KOA Speer Electronics Inc RK73H2ATTD2700F

    Thick Film Resistors - SMD 1/4W 270 OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H2ATTD2700F 12,663
    • 1 $0.1
    • 10 $0.018
    • 100 $0.01
    • 1000 $0.008
    • 10000 $0.005
    		Buy Now

    KOA Speer Electronics Inc RK73H2ARTTD4700F

    Thick Film Resistors - SMD 1/4W 470 OHM 1% ANTI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H2ARTTD4700F 10,022
    • 1 $0.18
    • 10 $0.063
    • 100 $0.039
    • 1000 $0.028
    • 10000 $0.023
    		Buy Now

    KOA Speer Electronics Inc RN73H2ATTD3700B25

    Thin Film Resistors - SMD 370Ohm,0805,0.1%,25p pm,125mW,100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN73H2ATTD3700B25 6,981
    • 1 $0.4
    • 10 $0.284
    • 100 $0.198
    • 1000 $0.133
    • 10000 $0.101
    		Buy Now
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    700 H2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PK MUR 460

    Abstract: analog devices 751n optocoupler 4 pin dip MOC 3861 EA SOT-23 UC3842 MOTOROLA S5502
    Text: MC33363 Advance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.0 A SenseFET power switch,


    Original     		PDF MC33363 PK MUR 460 analog devices 751n optocoupler 4 pin dip MOC 3861 EA SOT-23 UC3842 MOTOROLA S5502

    EA SOT-23

    Abstract: No abstract text available
    Text: MC33363A Product Preview High Voltage Switching Regulator The MC33363A is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.5 A SenseFET power switch,


    Original     		PDF MC33363A MC33363A EA SOT-23

    H2A1-H405

    Abstract: No abstract text available
    Text: ROITHNER LASERTECHNIK PRESENTS. NEW IR SENSOR CARD IR sensor card, price list page 72 ISC-4-ALL, 700.1700 nm, extreme sensitive IR sensor card, 4 fields each 19 x 19 mm² NEW HIGH POWER UV LEDS Power UV-LED, hex emitter, 1W, price list page 43 H2A1-H365, 365 nm, 25 mW at 350 mA, Uf = 3.7 V, +/-75°, lambertian silicone lens


    Original     		PDF H2A1-H365, H2A1-H375, H2A1-H385, H2A1-H395, H2A1-H405, APG2C1-365, 3653x 620/515/460nm, 23/45/12lm, 1050mA, H2A1-H405

    BC237

    Abstract: MSA1022 msc2295 BF391 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for


    Original     		PDF M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement"

    Hexagonal

    Abstract: H2A3-H530
    Text: H2A3-H530 High Power single chip LED H2A3-H530 is a InGaN based, high power 530 nm single chip LED in standard hexagonal Aluminum package for general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are


    Original     		PDF H2A3-H530 H2A3-H530 Hexagonal

    Hexagonal

    Abstract: H2A3-H625
    Text: H2A3-H625 High Power single chip LED H2A3-H625 is a InGaN based, high power 625 nm single chip LED in standard hexagonal Aluminum package for general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are


    Original     		PDF H2A3-H625 H2A3-H625 Hexagonal

    Untitled

    Abstract: No abstract text available
    Text: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE ATB H2A Abkündigung nach OS-PD-2008-016 Obsolete acc. to OS-PD-2008-016 Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie; planvergossen • Besonderheit des Bauteils: extrem hohe


    Original     		PDF OS-PD-2008-016 D-93055

    NTC Thermistors EPCOS 10K

    Abstract: smd code H2A 6170 TC SMD H2A SM10B-SRSS-TB
    Text: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE AB H2A Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie; planvergossen • Besonderheit des Bauteils: extrem hohe


    Original     		PDF

    SMD H2A

    Abstract: smd code H2A SM10B-SRSS-TB jst smd code
    Text: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE T H2A Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie, plan vergossen • Besonderheit des Bauteils: extrem hohe


    Original     		PDF SM10B-SRSS-TB JESD22-be SMD H2A smd code H2A SM10B-SRSS-TB jst smd code

    SMD H2A

    Abstract: smd code H2A h2a smd SM10B-SRSS-TB Q65110A5234
    Text: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE T H2A Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie, plan vergossen • Besonderheit des Bauteils: extrem hohe


    Original     		PDF SM10B-SRSS-TB JESD22-be SMD H2A smd code H2A h2a smd SM10B-SRSS-TB Q65110A5234

    transistor BC 245

    Abstract: HBC546
    Text: HI-SINCERITY Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. TO-92


    Original     		PDF HE6417 HBC546 HBC546 183oC 217oC 260oC transistor BC 245

    HBC548

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HA200103 HBC548 HBC548 183oC 217oC 260oC

    bf244

    Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage


    Original     		PDF 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc


    Original     		PDF 2N5555 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPF102 equivalent transistor

    Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25


    Original     		PDF MPF102 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF102 equivalent transistor mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note

    C502A

    Abstract: TL431A TL431B TL431C precision shunt regulators 431 Cystek
    Text: CYStech Electronics Corp. Spec. No. : C502A3 Issued Date : 2003.03.26 Revised Date : 2008.10.09 Page No. : 1/6 Adjustable Precision Shunt Regulators TL431A3 Description TO-92 The TL431A3 series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any


    Original     		PDF C502A3 TL431A3 TL431A3 50ppm/ UL94V-0 C502A TL431A TL431B TL431C precision shunt regulators 431 Cystek

    BC237

    Abstract: S11S C4 SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc


    Original     		PDF MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    code 4JW

    Abstract: ac 187 and 188 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 AC 188
    Text: ? ilic.on. . Rectifier Stacks I A2511 - - - - - - - - - - - - - Up to 600 peak reverse volts PRV per cell Up to 9.4 amps DC output per leg free convection rating T E R M IN A L OUTLINE DRAW ING -A2511 Features — Up to 99% in certain applications. — Forward voltage drops of less than one volt per cell.


    OCR Scan     		PDF A2511 -A2511 MIL-STD-202 code 4JW ac 187 and 188 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 AC 188

    code 4JW

    Abstract: 000CP 5987 ac 187 and 188 A190 A2011BC1AD1 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 mci 4515
    Text: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, sin g le phase center tap, using A20 c e lls on type 11 Fins, capable o f conducting 6 .3A ave .p er ce ll at 1800 C conduction angle in free a ir or 9.8A per ce ll in 2000 lin e a r feet per minute forced a ir.


    OCR Scan     		PDF A2011BC1AD1 MIL-STD-202 code 4JW 000CP 5987 ac 187 and 188 A190 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 mci 4515

    A2011BC2BD1

    Abstract: A2011FS1BD1 AK 3512 AMP terminal #187 tap AC 126
    Text: Silicon Rectifier Stacks A2011 High Efficiency — Up to 99% in certain applications. Excellent Regulation — Forward voltage drops of less than one volt per cell. Low Leakage — Excellent for magnetic am plifier applications. Wide Range of Operating and Storage Temperatures — Will operate from — 6 5 °C to 175°C.


    OCR Scan     		PDF Mk-STD-202 A2011BC2BD1 A2011FS1BD1 AK 3512 AMP terminal #187 tap AC 126