Untitled
Abstract: No abstract text available
Text: LED Indicators ~ Panel ~ Dome Lens SSI-LXH387XX-4 Series PANEL CUTOUT: Ø0.312” PANEL THICKNESS: 0.03” MIN Lumex Part Number T-4.7mm Dome Lens Indicator FEATURES / OPTIONS ►State-of-the-Art, High Brightness LED Chip Technology ►Choice of LED Colors and Lens Finishes
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SSI-LXH387XX-4
SSI-LXH600SRD-150
SSI-LXH600YD-150
SSL-LX509F3SID
SSL-LX509F3SOD
SSL-LX509F3SUGD
SSL-LX509F3SYD
SSL-LX509F3USBD
SSL-LX509F3GD
SSL-LX509F3ID
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Untitled
Abstract: No abstract text available
Text: LED Indicators ~ Panel ~ Rear Mounted 1 2 SSI-RM3091XX-150 Series 3 4 5 6 7 PANEL CUTOUT: Ø0.200” PANEL THICKNESS: 1.5mm MAX 8 TERMINATION: 6” 26 AWG Leads 9 Die Material Emitted Color T-3mm Rear of Panel Indicator, 6” Leads FEATURES / OPTIONS ►State-of-the-Art, High Brightness LED Chip Technology
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SSI-LXH9SID-150
SSI-LXH9SOD-150
SSI-LXH9SUGD-150
SSI-LXH9SYD-150
SSI-LXH9USBD-150
SSI-LXH9GD-150
SSI-LXH9ID-150
SSI-LXH9SRD-150
SSI-LXH9YD-150
SSI-RM3091XX-150
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87011
Abstract: EL-870-11
Text: LED - Chip ELС-870-11 Preliminary 6/21/2007 rev. 06/07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P anode up typ. dimensions (µm) 1000 1000 typ. thickness 160 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm dotted, 25% covered
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EL-870-11
PoC-05
D-12555
87011
EL-870-11
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RED Color band DIODES
Abstract: No abstract text available
Text: ARL 5923URUGW/2L FEATURES • Two chips are matched for uniform • light output,wide viewing angle • Long life solid state reliability • I.C.compatible/ Low power consumption • Pb free DESCRIPTIONS • The LED lamps contain two integral chips and is available as both bicolor and bipolar types
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5923URUGW/2L
RED Color band DIODES
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RED Color band DIODES
Abstract: No abstract text available
Text: ARL 3033URUGW/2L FEATURES • Two chips are matched for uniform • light output,wide viewing angle • Long life solid state reliability • I.C.compatible/ Low power consumption • Pb free DESCRIPTIONS • The LED lamps contain two integral chips and is available as both bicolor and bipolar types
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3033URUGW/2L
RED Color band DIODES
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Untitled
Abstract: No abstract text available
Text: LED Indicators ~ Panel ~ Dome Lens SSI-LXR3816XD-150 Series PANEL CUTOUT: Ø0.323” PANEL THICKNESS: 3.50mm MAX TERMINATION: 6” 24 AWG Leads Lumex Part Number T-5mm Chrome Indicator, Protruded LED, 6” Leads FEATURES / OPTIONS ►State-of-the-Art, High Brightness LED Chip Technology
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SSI-LXR3816XD-150
SSL-LX5099IGW
SSL-LX5099IYW
SSL-LX5099SISUGW
SSL-LX5099SISYW
SSL-LX5099SRSGW
SSL-LX5099SYSUGW
SSL-LX5099YGW
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SSI-LXR5010USBD150
Abstract: No abstract text available
Text: LED Indicators ~ Panel ~ Dome Lens SSI-LXR5010XD-150 Series PANEL CUTOUT: Ø8.05mm PANEL THICKNESS: 0.6 - 2.8mm TERMINATION: 6” 24 AWG Leads Lumex Part Number T-5mm Black Panel Indicator, Protruded LED, 6” Leads FEATURES / OPTIONS ►State-of-the-Art, High Brightness LED Chip Technology
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SSI-LXR5010XD-150
SSL-LX5099IGW
SSL-LX5099IYW
SSL-LX5099SISUGW
SSL-LX5099SISYW
SSL-LX5099SRSGW
SSL-LX5099SYSUGW
SSL-LX5099YGW
SSI-LXR5010USBD150
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700-nm LED chip
Abstract: LED 700-nm chip AlGaAs
Text: LED - Chip ELС-690-21 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Deep red DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered
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EL-690-21
PoC-05
D-12555
700-nm LED chip
LED 700-nm chip AlGaAs
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ELC-690-25
Abstract: led chip
Text: v 1.0 12.06.2013 ELC-690-25 Description ELC-690-25 is a AlGaAs based 325x325 µm bare LED chip die of double hetero structure in dual combination DDH with gold plated electrodes. It has a typical emission wavelength of 690 nm. . It is delivered on adhesive film with the wire bond side up.
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ELC-690-25
ELC-690-25
325x325
led chip
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Untitled
Abstract: No abstract text available
Text: ARL-10403URUGC/3L Features • Two chips are matched for uniform light output, wide viewing angle • Long life-solid state reliability • I.C. compatible/Low power consumption • Pb free Applications Descriptions • • • • • The LED lamps contain two integral chips and is
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ARL-10403URUGC/3L
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Untitled
Abstract: No abstract text available
Text: ARL 5019GYC FEATURES • Two chips are matched for uniform • light output,wide viewing angle • Long life solid state reliability • I.C.compatible/ Low power consumption • Pb free DESCRIPTIONS • The LED lamps contain two integral chips and is available as both bicolor and bipolar types
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5019GYC
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arl5013
Abstract: ARL-5013 arl5013u
Text: ARL-5013URBC-B Features • Two chips are matched for uniform light output, wide viewing angle • Long life-solid state reliability • I.C.compatible/Low power consumption • Pb free Descriptions Applications • The LED lamps contain two integral chips and is
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ARL-5013URBC-B
arl5013
ARL-5013
arl5013u
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Untitled
Abstract: No abstract text available
Text: ARL-10403URUGW/3L Features • Two chips are matched for uniform light output, wide viewing angle • Long life-solid state reliability • I.C. compatible/Low power consumption • Pb free Descriptions Applications • • • • • The LED lamps contain two integral chips and is
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ARL-10403URUGW/3L
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Untitled
Abstract: No abstract text available
Text: ARL 5413EGC/3L FEATURES • Two chips are matched for uniform light • output, wide viewing angle • I.C.compatible/Low power consumption Long life solid state reliability • DESCRIPTIONS Pb free • The LED lamps contain two integral chips and is available as both bicolor and bipolar types
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5413EGC/3L
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Untitled
Abstract: No abstract text available
Text: ARL 5013URGC/3L FEATURES • Two chips are matched for uniform light • output, wide viewing angle • I.C.compatible/Low power consumption Long life solid state reliability • DESCRIPTIONS Pb free • The LED lamps contain two integral chips and is available as both bicolor and bipolar types
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5013URGC/3L
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Untitled
Abstract: No abstract text available
Text: OPA8828 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8828
100mA
--------------------110um
--------------------10mil
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OPA8828
Abstract: No abstract text available
Text: OPA8828 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8828
100mA
--------------------110um
--------------------10mil
OPA8828
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po102
Abstract: 700 nm LED bare chip OPA8831 tf 400 OPA883
Text: OPA8831 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8831
100mA
--------------------130um
--------------------10mil
po102
700 nm LED bare chip
OPA8831
tf 400
OPA883
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Untitled
Abstract: No abstract text available
Text: OPA8831 Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8831
100mA
--------------------130um
--------------------10mil
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LED 690 nm
Abstract: 700-nm LED chip 700 nm LED bare chip
Text: LED - Chip ELС-690-25 Preliminary 10.04.2007 rev. 04/07 Radiation Type Technology Electrodes Red DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered
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EL-690-25
LED-03
D-12555
LED 690 nm
700-nm LED chip
700 nm LED bare chip
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Untitled
Abstract: No abstract text available
Text: LED - Chip ELС-685-21-15 Preliminary 10.04.2007 rev. 01/07 Radiation Type Technology Electrodes Deep red solderable AlGaAs/GaAs N cathode up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm
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EL-685-21-15
PoC-05
D-12555
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LED 710 nm
Abstract: ELC-700-25 EL-700-25 IR LED infrared led 690
Text: LED - Chip ELC-700-25 Preliminary 10.04.2007 rev. 07/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered
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ELC-700-25
LED-03
EL-700-25
D-12555
LED 710 nm
ELC-700-25
EL-700-25
IR LED infrared led 690
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POC02
Abstract: 700 nm LED bare chip
Text: LED - Chip ELС-685-21-05 discontinued 23.05.2007 rev. 04/07 Radiation Type Technology Electrodes Deep red solderable AlGaAs/GaAs N cathode up typ. dimensions (µm) 1000 340 typ. thickness 340 260 (±20) µm 1000 cathode gold alloy, 1.5 µm Ø 11 anode gold alloy, 0.5 µm
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EL-685-21-05
PoC-02
D-12555
POC02
700 nm LED bare chip
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ELC-1300-25
Abstract: 6605 SP EPD-550 EPD-660-5 SMD A1W ultraviolet sensor flame 2x430 elj-660-225 ELJ-810-248 ELC-630-13
Text: Chips ♦ visible ♦ infrared ♦ special design AutoSelective Photodiodes ♦ ultraviolet ♦ visible ♦ infrared LEDs, SMDs in different designs ♦ visible ♦ infrared ♦ high-power ♦ high-speed Type Designation System LED Chips: L C 1234 Light emitting
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ELC-660-199
ELC-1300-25
6605 SP
EPD-550
EPD-660-5
SMD A1W
ultraviolet sensor flame
2x430
elj-660-225
ELJ-810-248
ELC-630-13
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