A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.
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CM44-10134-1E
2MC-16LX
16-BIT
MB90945
F2MC-16LX
F2MC-16LX
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10103-5E 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.
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CM44-10103-5E
2MC-16LX
16-BIT
MB90550A/B
MC-16LX
F2MC-16LX
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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ups circuit diagram using idvr
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CM44-10102-5E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and Intended Reader Thank you for your interest in Fujitsu semiconductor products.
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CM44-10102-5E
2MC-16LX
16-BIT
MB90570/A
-16LX
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PDF
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: PCM1760P/U DF1760P/U Multi-Bit Enhanced Noise Shaping 20-Bit ANALOG-TO-DIGITAL CONVERSION SYSTEM FEATURES DESCRIPTION ● DUAL 20-BIT MONOLITHIC MODULATOR PCM1760 AND MONOLITHIC DECIMATING DIGITAL FILTER (DF1760) ● HIGH PERFORMANCE: THD+N: –92dB typ, –90dB max
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PCM1760P/U
DF1760P/U
20-Bit
PCM1760)
DF1760)
108dB
110dB
256fs
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AN1995
Abstract: M25P40
Text: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)
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M25P40
50MHz
2013h)
M25P40and
AN1995
M25P40
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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s29f
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '
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TMS29F040
4194304-BIT
29LF040/
29VF040
ComJS820A
R-PDSO-G32)
s29f
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
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SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
A18A17
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PDF
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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Am29LV081
20-year
Am29LV081B-100
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PDF
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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OCR Scan
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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PDF
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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Am29LV004
20510D
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PDF
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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OCR Scan
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Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for
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OCR Scan
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Am29LV081
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