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    7002 N CHANNEL Search Results

    7002 N CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    7002 N CHANNEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING SSG SOT23

    Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
    Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information


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    OT-23 Q67000-S063 E6327 MARKING SSG SOT23 E6327 Q67000-S063 SN7002 sot-23 Marking 7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b32ü QG172^b S [SIP SN 7002 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • _ SIPMOS - enhancement mode Draln-source voltage Vtt = 60V Continuous drain current I d = 0.19A Drain-source on-resistance fios on = 5.00 Total power dissipation


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    23b32Ã QG172 Q67000-S063 G017301 T-55-25 PDF

    m2n7000

    Abstract: 1000J sot23 BS170
    Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5


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    2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170 PDF

    MOSFET S170

    Abstract: s170 mosfet s170 S-52429 1000J s170 to92
    Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )


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    2N7000/7002, BS170 2N7000 2N7002 BS170 S-52429-- 28-Apr-97 VQ1000J/P, MOSFET S170 s170 mosfet s170 S-52429 1000J s170 to92 PDF

    D7002

    Abstract: D7002c uPD7002 NEC D7002 PD7002 pd7002c BUA 7002 146C 7002C 8085 interrupt
    Text: 3 ì 2 61 NEC < < > - D e s c rip tio n /¿PD7002 10-Bit A/D Converter & Pin C o n fig u ra tio n The ¿/PD7002 is a high perform ance, low power, 10-bit CMOS a na lo g-to -d igita l converter Using the integrating technique the 7002 offers the designer full m icro p ro c­


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    uPD7002 10-Bit /PD7002 D7002 D7002c NEC D7002 PD7002 pd7002c BUA 7002 146C 7002C 8085 interrupt PDF

    convertisseur de 12v -220v

    Abstract: porte logique porte logique and ttl 7004 TRANSISTOR BIPOLAIRE IC Ensemble
    Text: SF.T SF.T SF.T SF.T F.E.T. ANALOGIC GATES PORTES AN ALO G IQ UES A TRANSISTORS A EFFET DE CHAMP These silicon devices are constituted by : Ces dispositifs, eu siliciu m s o nt composés : • a field-effect transistor N channel - d ’un transistor à e ffe t de cham p canal N


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    PDF

    D7002

    Abstract: No abstract text available
    Text: ANALOG DEVICES LC2M0S GSM Baseband I/O Port AD7002 GENERAL DESCRIPTION The AD7002 is a complete low power, two-channel, input/ output port with signal conditioning. The device is used as a baseband digitization subsystem, performing signal conversion between the DSP and the IF/RF sections in the Pan-European


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    10-Bit 44-Lead AD7002 AD7002 D7002 PDF

    N7000

    Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
    Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been


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    2N7000/2N7002/NDF7000A/NDS7002A 81-043-299-240B bSD1130 N7000 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm PDF

    sot 23 70.2

    Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
    Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code


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    2N7002 OT-23 OT-23: sot 23 70.2 sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W PDF

    2N7000

    Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
    Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


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    2N7000 2N7002 NDS7002A 400mA 2N7002A 2N700 7002A FE -2N7002 "ON Semiconductor" 2N7002 PDF

    7002N

    Abstract: 2N7000 S7002
    Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


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    2N7000 2N7002 NDS7002A 400mA 2N7002A 7002N S7002 PDF

    fet canal p

    Abstract: transistor ESM 30 SF.T7001 transistor a effet de champ 7002 n channel TO-71 Dual Transistors TO-71
    Text: F 100 T O 71 CB 4 9 (C B 1 2 4 ) F E T dual transistors, N channel Tamb = 2 5 °C T ra n s is to rs d o u b le s à e f f e t d e c h a m p , c a n a l N Type Case Type B oîtier ‘ dss (mA) Y 21S (mS) V GSoff (V) C 11ss c 12ss (pF) (pF) V (BR)GSS (V)


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    c11ss fet canal p transistor ESM 30 SF.T7001 transistor a effet de champ 7002 n channel TO-71 Dual Transistors TO-71 PDF

    2410m

    Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
    Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■


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    T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Thpt HP AE CWKLAERTDT mLHÆ VDE 0884 Approved, High CMR, Wide Vcc, Logic Gate Optocoupler Technical Data Features • 5000 VRMS/1 Minute Insula­ tion Withstand Capability • Worldwide Safety Approval • UL1577 File No. E55361 • CSA Certified-Component


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    UL1577 E55361) CA88324) BS415/BS EN60950 EN41003 CNW2211) 5963-2262E 5963-7156E G012SG3 PDF

    c9013

    Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
    Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.


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    R-118 c9013 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638 PDF

    S7504

    Abstract: S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502
    Text: B U R R -B R O W N PWS750 ] E Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • INDUSTRIAL PROCESS CONTROL EQUIPMENT • COMPACT-SURFACE MOUNT • GROUND-LOOP ELIMINATION • MULTICHANNEL OPERATION


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    PWS750 PWS740/PWS745 750-2U 750-4U 750-3U 750-1U T07-14-3 S7504 S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502 PDF

    TI368

    Abstract: KM7002 434m TK401A 2SB26 LT5153 2N1261 CK415 GERMANIUM phototransistor CK256
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. 250kT TK401A TK402A TK403A 454m0 2N1261A TI368 KM7002 434m 2SB26 LT5153 2N1261 CK415 GERMANIUM phototransistor CK256 PDF

    Untitled

    Abstract: No abstract text available
    Text: TCED1100 G up to TCED4100 Vishay Telefunken T Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse­ nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.


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    TCED1100 TCED4100 TCED1100/ TCED2100/ TCED4100 16-lead 11-Ja TCED2100 PDF

    H052

    Abstract: No abstract text available
    Text: CNY17 Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CN Y17 series consists of a phototransistor opti­ cally coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    CNY17 CNY17G 11-Jan-99 H052 PDF

    IC 4N35 circuit diagram

    Abstract: 4N25GV
    Text: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/4N35(G)V series consists of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.


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    /4N35 4N25G/ 4N35G 11-Ja IC 4N35 circuit diagram 4N25GV PDF

    Untitled

    Abstract: No abstract text available
    Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse­ nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.


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    TCED1100 TCED4100 TCED1100/ TCED2100/ TCED4100 16-lead 11-Jan-99 TCED2100 PDF

    OPTOCOUPLER MARKING CODE 815

    Abstract: No abstract text available
    Text: TCET1600 up to TCET4600 VISHAY Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide inf rared-emitting diodes in a 4-lead up to 16-lead


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    TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead TCET2600 OPTOCOUPLER MARKING CODE 815 PDF

    Untitled

    Abstract: No abstract text available
    Text: CQY80N G _ ViSM&Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.


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    CQY80N CNY80NG CNY80N PDF