MARKING SSG SOT23
Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
|
Original
|
OT-23
Q67000-S063
E6327
MARKING SSG SOT23
E6327
Q67000-S063
SN7002
sot-23 Marking 7002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b32ü QG172^b S [SIP SN 7002 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • _ SIPMOS - enhancement mode Draln-source voltage Vtt = 60V Continuous drain current I d = 0.19A Drain-source on-resistance fios on = 5.00 Total power dissipation
|
OCR Scan
|
23b32Ã
QG172
Q67000-S063
G017301
T-55-25
|
PDF
|
m2n7000
Abstract: 1000J sot23 BS170
Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5
|
OCR Scan
|
2N7000/7002,
BS170_
2N7000
2N7002
VQ1000J
VQ1000P
BS170
P-37993--
VQ1000J/P,
m2n7000
1000J
sot23 BS170
|
PDF
|
MOSFET S170
Abstract: s170 mosfet s170 S-52429 1000J s170 to92
Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )
|
OCR Scan
|
2N7000/7002,
BS170
2N7000
2N7002
BS170
S-52429--
28-Apr-97
VQ1000J/P,
MOSFET S170
s170 mosfet
s170
S-52429
1000J
s170 to92
|
PDF
|
D7002
Abstract: D7002c uPD7002 NEC D7002 PD7002 pd7002c BUA 7002 146C 7002C 8085 interrupt
Text: 3 ì 2 61 NEC < < > - D e s c rip tio n /¿PD7002 10-Bit A/D Converter & Pin C o n fig u ra tio n The ¿/PD7002 is a high perform ance, low power, 10-bit CMOS a na lo g-to -d igita l converter Using the integrating technique the 7002 offers the designer full m icro p ro c
|
OCR Scan
|
uPD7002
10-Bit
/PD7002
D7002
D7002c
NEC D7002
PD7002
pd7002c
BUA 7002
146C
7002C
8085 interrupt
|
PDF
|
convertisseur de 12v -220v
Abstract: porte logique porte logique and ttl 7004 TRANSISTOR BIPOLAIRE IC Ensemble
Text: SF.T SF.T SF.T SF.T F.E.T. ANALOGIC GATES PORTES AN ALO G IQ UES A TRANSISTORS A EFFET DE CHAMP These silicon devices are constituted by : Ces dispositifs, eu siliciu m s o nt composés : • a field-effect transistor N channel - d ’un transistor à e ffe t de cham p canal N
|
OCR Scan
|
|
PDF
|
D7002
Abstract: No abstract text available
Text: ANALOG DEVICES LC2M0S GSM Baseband I/O Port AD7002 GENERAL DESCRIPTION The AD7002 is a complete low power, two-channel, input/ output port with signal conditioning. The device is used as a baseband digitization subsystem, performing signal conversion between the DSP and the IF/RF sections in the Pan-European
|
OCR Scan
|
10-Bit
44-Lead
AD7002
AD7002
D7002
|
PDF
|
N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
|
OCR Scan
|
2N7000/2N7002/NDF7000A/NDS7002A
81-043-299-240B
bSD1130
N7000
2N7000 MOSFET
CJ NDF7000A
sfs sot23
Mosfet 2n7000
2N7000
2N7002
NDF7000A
NDS7002A
7002 transistor sm
|
PDF
|
sot 23 70.2
Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code
|
OCR Scan
|
2N7002
OT-23
OT-23:
sot 23 70.2
sot-23 MARKING CODE 70.2
SOT-23 Marking code MU
sot23 702
sot-23 702
7002 SOT-23
sot-23 MARKING CODE GS
702 sot 23
diode marking code MU
702W
|
PDF
|
2N7000
Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
|
OCR Scan
|
2N7000
2N7002
NDS7002A
400mA
2N7002A
2N700
7002A
FE -2N7002
"ON Semiconductor" 2N7002
|
PDF
|
7002N
Abstract: 2N7000 S7002
Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
|
OCR Scan
|
2N7000
2N7002
NDS7002A
400mA
2N7002A
7002N
S7002
|
PDF
|
fet canal p
Abstract: transistor ESM 30 SF.T7001 transistor a effet de champ 7002 n channel TO-71 Dual Transistors TO-71
Text: F 100 T O 71 CB 4 9 (C B 1 2 4 ) F E T dual transistors, N channel Tamb = 2 5 °C T ra n s is to rs d o u b le s à e f f e t d e c h a m p , c a n a l N Type Case Type B oîtier ‘ dss (mA) Y 21S (mS) V GSoff (V) C 11ss c 12ss (pF) (pF) V (BR)GSS (V)
|
OCR Scan
|
c11ss
fet canal p
transistor ESM 30
SF.T7001
transistor a effet de champ
7002 n channel
TO-71
Dual Transistors TO-71
|
PDF
|
2410m
Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■
|
OCR Scan
|
T0220
14-Pin
1001P
1001J
1004J
1004P
L000J
1000P
1006P
T0236
2410m
0300L
2222LM
0808M
2406M
0201T
0300M
12l 7002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
|
Original
|
OT-23
2N7002
OT-23
500mA
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Thpt HP AE CWKLAERTDT mLHÆ VDE 0884 Approved, High CMR, Wide Vcc, Logic Gate Optocoupler Technical Data Features • 5000 VRMS/1 Minute Insula tion Withstand Capability • Worldwide Safety Approval • UL1577 File No. E55361 • CSA Certified-Component
|
OCR Scan
|
UL1577
E55361)
CA88324)
BS415/BS
EN60950
EN41003
CNW2211)
5963-2262E
5963-7156E
G012SG3
|
PDF
|
c9013
Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.
|
Original
|
R-118
c9013
84 pin PBGA
oscilloscope MTBF
TSMC retention memory
dc 8069
IS61C1024
IC Data-book
Q-16
car radio 14x20
TSOP 8638
|
PDF
|
S7504
Abstract: S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502
Text: B U R R -B R O W N PWS750 ] E Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • INDUSTRIAL PROCESS CONTROL EQUIPMENT • COMPACT-SURFACE MOUNT • GROUND-LOOP ELIMINATION • MULTICHANNEL OPERATION
|
OCR Scan
|
PWS750
PWS740/PWS745
750-2U
750-4U
750-3U
750-1U
T07-14-3
S7504
S7503
S726
PWS-750-6
2N7010
4PIN Transform
diode bridge 4pin
2n7012
diode 2U
s7502
|
PDF
|
TI368
Abstract: KM7002 434m TK401A 2SB26 LT5153 2N1261 CK415 GERMANIUM phototransistor CK256
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
|
OCR Scan
|
NPN110.
250kT
TK401A
TK402A
TK403A
454m0
2N1261A
TI368
KM7002
434m
2SB26
LT5153
2N1261
CK415
GERMANIUM phototransistor
CK256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken T Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
|
OCR Scan
|
TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
11-Ja
TCED2100
|
PDF
|
H052
Abstract: No abstract text available
Text: CNY17 Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CN Y17 series consists of a phototransistor opti cally coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
|
OCR Scan
|
CNY17
CNY17G
11-Jan-99
H052
|
PDF
|
IC 4N35 circuit diagram
Abstract: 4N25GV
Text: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
|
OCR Scan
|
/4N35
4N25G/
4N35G
11-Ja
IC 4N35 circuit diagram
4N25GV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
|
OCR Scan
|
TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
11-Jan-99
TCED2100
|
PDF
|
OPTOCOUPLER MARKING CODE 815
Abstract: No abstract text available
Text: TCET1600 up to TCET4600 VISHAY Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse nide inf rared-emitting diodes in a 4-lead up to 16-lead
|
OCR Scan
|
TCET1600
TCET4600
TCET1600/
TCET2600/
TCET4600
16-lead
TCET2600
OPTOCOUPLER MARKING CODE 815
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CQY80N G _ ViSM&Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
|
OCR Scan
|
CQY80N
CNY80NG
CNY80N
|
PDF
|