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KSA709 Abstract: KSC1009 Text: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O \| 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709	OCR Scan	KSC1009 700inA 800mW KSA709 T-29-23 KSA709	PDF

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KSA709

Abstract: KSC1009
Text: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O | 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709

OCR Scan

KSC1009 700inA 800mW KSA709 T-29-23 KSA709

PDF