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    702 SOT Search Results

    702 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    702 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    702 sot23

    Abstract: 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23
    Text: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages


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    ADG701/702 100MHz OT-23 ADG701 ADG702 ADG701/702 702 sot23 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23 PDF

    702 sot23

    Abstract: No abstract text available
    Text: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages


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    100MHz OT-23 ADG701/702 ADG701 ADG702 ADG701/702 702 sot23 PDF

    2N7002

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 4 – APRIL 2006 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C


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    2N7002 500mA 200mA 2N7002 PDF

    DSS SOT23

    Abstract: 2N7002
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C


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    2N7002 500mA 200mA DSS SOT23 2N7002 PDF

    sot-23 MARKING CODE 70.2

    Abstract: marking 702 sot-23 sot-23 marking 702 sot-23 702 2N7002 MARKING 2N7002 MARKING 702 2N7002 p-channel SOT-23 20V
    Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    2N7002 O-236AB: O-236AB* OT-23. sot-23 MARKING CODE 70.2 marking 702 sot-23 sot-23 marking 702 sot-23 702 2N7002 MARKING 2N7002 MARKING 702 2N7002 p-channel SOT-23 20V PDF

    2N7002

    Abstract: 2N7002 MARKING 712
    Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    2N7002 O-236AB: O-236AB* OT-23. 2N7002 2N7002 MARKING 712 PDF

    AA115 diode

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


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    L2N7002LT1 236AB) L2N7002LT1â AA115 diode PDF

    RG 702 Diode

    Abstract: 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1 L2N7002LT1G SOT23-3 702
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


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    L2N7002LT1 236AB) L2N7002LT1 RG 702 Diode 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1G SOT23-3 702 PDF

    sot 23 70.2

    Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB


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    L2N7002LT1G 236AB) OT-23 sot 23 70.2 L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring


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    L2N7002LT1G S-L2N7002LT1G 236AB) AEC-Q101 OT-23 PDF

    702 sot

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60


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    L2N7002LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 702 sot PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS


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    L2N7002LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner PDF

    MARKING GA

    Abstract: A779 baw78c
    Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8


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    62702-A675 62702-A677 62702-A779 62702-A109 MARKING GA A779 baw78c PDF

    sot 23 70.2

    Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
    Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code


    OCR Scan
    2N7002 OT-23 OT-23: sot 23 70.2 sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W PDF

    2N5927

    Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
    Text: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .


    OCR Scan
    T-33-15 2N5927 JEDECT0-114PKG. 200mA, 100KHZ H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan
    O-236AB* 2N7002 O-236AB: OT-23. PDF

    2N7002 MARKING 712

    Abstract: 2N7002 800mA SOT-23 Marking code MU
    Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan
    2N7002 O-236AB* O-236AB: OT-23. 2N7002 MARKING 712 2N7002 800mA SOT-23 Marking code MU PDF

    transistor kt 801

    Abstract: S/transistor kt 801 KT 802 transistor a05 801
    Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703


    OCR Scan
    MJE800/801/802/803 000770b O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJEo00/801 GQG77fe transistor kt 801 S/transistor kt 801 KT 802 transistor a05 801 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v d ss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 7.5Q. 0.5A O rd e r N um ber / Package Product marking for TO-236AB: TO-236AB* 702* 2N7002 where * = 2-week alpha date code


    OCR Scan
    2N7002 O-236AB: O-236AB* PDF

    sot 23 transistor 70.2

    Abstract: LTA 702 N k/702 P transistor
    Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


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    JE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 GQG77fe sot 23 transistor 70.2 LTA 702 N k/702 P transistor PDF

    LTA 702 N

    Abstract: LTA 702
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATU RES * 60 Volt V CE0 P A R T M A R K IN G D E T A IL - 702 ABSOLUTE MAXIMUM RATINGS, PARAM ETER SYM BO L D ra in -S o u rce V o lta ge ^DS C o n tin u o u s D rain C u rren t at T <Jmb=25°C


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    300jis. LTA 702 N LTA 702 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast S w itching Times


    OCR Scan
    ADG701/ADG702 OT-23 701/A dissipati071 Sri037 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast Switching Times


    OCR Scan
    ADG701/ADG702 OT-23 701/A OT-23) Sri037 PDF

    702 y sot 23

    Abstract: la sot23-8 analog 701BR
    Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast S w itching Times


    OCR Scan
    OT-23 ADG701/ADG702 701/A OT-23) Sri037 702 y sot 23 la sot23-8 analog 701BR PDF