Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    702 TRANSISTOR Search Results

    702 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    702 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702 A TRANSISTOR

    Abstract: TRansistor 701 702 P TRANSISTOR
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 MJE703STU 702 A TRANSISTOR TRansistor 701 702 P TRANSISTOR

    702 TRANSISTOR

    Abstract: 702 pnp
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 702 TRANSISTOR 702 pnp

    702 TRANSISTOR

    Abstract: 702 pnp ON 001 702 transistor k 702
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 702 TRANSISTOR 702 pnp ON 001 702 transistor k 702

    702 y TRANSISTOR

    Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701

    Untitled

    Abstract: No abstract text available
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703

    702 P TRANSISTOR

    Abstract: 702 TRANSISTOR ic 701 E702 TRansistor 701 ic 701 fairchild 702 pnp fairchild 703
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 702 P TRANSISTOR 702 TRANSISTOR ic 701 E702 TRansistor 701 ic 701 fairchild 702 pnp fairchild 703

    ic 701

    Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 ic 701 ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701

    ic 803

    Abstract: mje800 mje802
    Text: SavantIC Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier


    Original     		PDF MJE800/801/802/803 O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJE800/802 MJE801/803 ic 803 mje800 mje802

    MJE800

    Abstract: pc 801 ic 701 ic 803
    Text: Inchange Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type MJE700/701/702/703 ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for general–purpose amplifier


    Original     		PDF MJE800/801/802/803 O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJE801/803 MJE800 pc 801 ic 701 ic 803

    ic 803

    Abstract: transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126 Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/802 KSE801/803 ic 803 transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803

    702 TRANSISTOR

    Abstract: kse800
    Text: KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 702 TRANSISTOR kse800

    702 TRANSISTOR

    Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700
    Text: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF MJE700/701/702/703 O-126 MJE800/801/802/803 MJE700/701 MJE702/703 702 TRANSISTOR ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700

    Untitled

    Abstract: No abstract text available
    Text: MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF MJE800/801/803 O-126 MJE700/701/702/703 MJE800/801 MJE802/803

    ic 701

    Abstract: No abstract text available
    Text: PNP EPITAXIAL KSE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 ic 701

    702 P TRANSISTOR

    Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor
    Text: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -


    OCR Scan     		PDF KSE700/701/702/703 KSE800/801/802/803 KSE700/701 702 P TRANSISTOR LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor

    transistor H 802

    Abstract: PC 801 S
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @ lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol


    OCR Scan     		PDF KSE800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 transistor H 802 PC 801 S

    702 y TRANSISTOR

    Abstract: KSE800
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF KSE700/701 KSE800/801/802/803 KSE700/701 KSE702/703 702 y TRANSISTOR KSE800

    702 TRANSISTOR

    Abstract: transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF KSE700/701 KSE800/801/802/803 O-126 KSE702/703 702 TRANSISTOR transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701

    kse800

    Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF E800/801/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 kse800 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701

    JE802

    Abstract: No abstract text available
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF MJE800/801/803 JE700/701/702/703 MJE800/801 JE802/803 50fiA JE802

    JE801

    Abstract: JE700 transistor H 802 y 803
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF MJE800/801/803 MJE800/801 MJE802/803 JE801 JE700 transistor H 802 y 803

    702 TRANSISTOR npn

    Abstract: MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF MJE800/801/803 MJE700/701/702/703 MJE800/801 MJE802/803 O-126 Characterist1/803 702 TRANSISTOR npn MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801

    2N5927

    Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
    Text: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .


    OCR Scan     		PDF T-33-15 2N5927 JEDECT0-114PKG. 200mA, 100KHZ H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG

    2n4494

    Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
    Text: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495


    OCR Scan     		PDF T-27-Ã 2N3707 MPS3707 100nA 100/iA 2N3708 MPS3708 2N3709 MPS3709 2n4494 MPS3711 2N4495 PN2218 2N3711