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    705 TRANSISTOR Search Results

    705 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    705 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: OPA705 O PA OPA2705 OPA4705 705 OPA 705 OPA OPA 705 705 SBOS182A – JUNE 2001 Low-Cost, CMOS, Rail-to-Rail, I/O OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● RAIL-TO-RAIL INPUT AND OUTPUT ● WIDE SUPPLY RANGE: Single Supply: 4V to 12V Dual Supplies: ±2 to ±6


    Original     		PDF OPA705 OPA2705 OPA4705 SBOS182A OT23-5, TSSOP-14 OPA705

    sa50ce

    Abstract: block diagram of mri machine A 0503 snubber design audio amplifier
    Text: #3*% &.0503%3*7&3".1-*'*&34 SA50CE M I C R O T E C H N O L O G Y )551888"1&9.*$305&$)$0.  "1&9   FEATURES • LOW COST COMPLETE H-BRIDGE • SELF-CONTAINED SMART LOWSIDE/HIGHSIDE DRIVE CIRCUITRY • SINGLE ENDED SUPPLY OPERATION


    Original     		PDF SA50CE SA50CE SA50CEU block diagram of mri machine A 0503 snubber design audio amplifier

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		PDF 2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399

    STD03N

    Abstract: STD03P 4 PIN THROUGH HOLE TRANSISTORS G746 SC102 YG6260 sanken high power audio amplifier sanken audio sanken audio amplifier
    Text: STD03N and STD03P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 160 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,


    Original     		PDF STD03N STD03P STD03P SSE-23668 SSE-23669 4 PIN THROUGH HOLE TRANSISTORS G746 SC102 YG6260 sanken high power audio amplifier sanken audio sanken audio amplifier

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z" SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

    485G

    Abstract: NBSG72A NBSG72AMN NBSG72AMNG tip 410 transistor
    Text: NBSG72A 2.5V/3.3V SiGe Differential 2 x 2 Crosspoint Switch with Output Level Select The NBSG72A is a high−bandwidth fully differential 2 X 2 crosspoint switch with Output Level Select OLS capabilities. This is a part of the GigaComm family of high performance Silicon


    Original     		PDF NBSG72A QFN-16 NBSG72A 16-pin NBSG72A/D 485G NBSG72AMN NBSG72AMNG tip 410 transistor

    dx 1305

    Abstract: 485G AND8020 NBSG86A NBSG86ABA NBSG86ABAR2 1B39
    Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi−function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a


    Original     		PDF NBSG86A FCBGA-16 QFN-16 NBSG86A 16-pin, NBSG86A/D dx 1305 485G AND8020 NBSG86ABA NBSG86ABAR2 1B39

    Untitled

    Abstract: No abstract text available
    Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi-function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a


    Original     		PDF NBSG86A NBSG86A 16-pin, NBSG86A/D

    QFN tray 3x3

    Abstract: qfn 3x3 tray dimension
    Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi−function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high


    Original     		PDF NBSG86A 16-pin, NBSG86A/D QFN tray 3x3 qfn 3x3 tray dimension

    NE38018 V68

    Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
    Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz


    Original     		PDF NE38018 NE38018-T1 NE38018-T2 NE38018 V68 transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792

    485G

    Abstract: NBSG53A NBSG53ABA fcBGA PACKAGE thermal resistance
    Text: NBSG53A 2.5V/3.3V SiGe Selectable Differential Clock and Data D Flip−Flop/Clock Divider with Reset and OLS* The NBSG53A is a multi−function differential D flip−flop DFF or fixed divide by two (DIV/2) clock generator. This is a part of the GigaComm family of high performance Silicon Germanium


    Original     		PDF NBSG53A FCBGA-16 QFN-16 NBSG53A NBSG53A/D 485G NBSG53ABA fcBGA PACKAGE thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: L9678 L9678-S User configurable airbag IC Datasheet - production data • Squib deployment drivers – 4 channel HSD/LSD – 25 V maximum deployment voltage – 1.2 A @ 2 ms and 1.75 A @ 0.5/0.7 ms deployment profiles – Integrated safing FET linear regulator,


    Original     		PDF L9678 L9678-S LQFP64 10x10x1 DocID025869

    mxt 2410 sx

    Abstract: PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751
    Text: RoHS-COMPLIANT INFORMATION CHART RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. RoHS 5/6 refers to no Cd, Cr+6, Hg, PBB or PBDE – Pb solder or Pb plating present Telecom exemption . Bourns Product Line


    Original     		PDF CD0402, OD323, CD214A-F, 14A-R, 214B-F, CD214B-R, 214C-F, 214C-R, CD214L-TxxA/CA CD214A-B, mxt 2410 sx PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Q62702C2262

    Abstract: No abstract text available
    Text: SIEMENS BCR 183 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit «Built in resistor Rt = 10k£2, R2 = 10kiî Type Marking Ordering Code BCR 183 WMs Pin Configuration Q62702-C2262 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2262 OT-23 40mmS Q62702C2262

    LTA 703 S

    Abstract: amplifier shf
    Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SK2331 12GHz) LTA 703 S amplifier shf

    D2200

    Abstract: No abstract text available
    Text: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment


    OCR Scan     		PDF 2SB1451/2SD2200 2SB1451/2SD2200-applied 2SB1451 D2200 2SR1451

    4E7 philips

    Abstract: KY 711 VN2406L FL 210 transistor
    Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n


    OCR Scan     		PDF 711002b VN2406L MBB073 711Dfl5h D0bfl057 MC9357 4E7 philips KY 711 VN2406L FL 210 transistor

    2SD1325

    Abstract: No abstract text available
    Text: Power Transistors 2SD1325 2SD 1325 Package D im ensions Unit ! mm 4.4m ax. 10.2m ax. Silicon NPN Triple-D iffused Planar Darlington Type 2 9max M edium Speed Pow er S w itching • Features 0 3 .1 + 0.1 • 6 0 V Z e n e r d iod e built-in b e tw e e n C and B


    OCR Scan     		PDF 2SD1325 b132fiS5 D01b707 2SD1325

    S21cl

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2 3 Q 4 Q 3 Q U n it in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low N oise F igure, H igh G ain. I N F = l.l d B , | S 2 i e l 2 = 1 2 d B f= lG H z CJ.S J I J . l ,— I


    OCR Scan     		PDF 2SC4839 S21cl

    Untitled

    Abstract: No abstract text available
    Text: Whn%H EW LETT •LEM Avantek PACKARD Products Thin-Film Cascadable Amplifier 10 to 400 MHz Technical Data UTO/IJTC 443 Series Features Description Pin Configuration • Frequency Range: 10 to 400 MHz The 443 Series is a 5-volt bias medium- gain bipolar RF amplifier


    OCR Scan     		PDF 4M47S34

    A1728

    Abstract: 2SA1728
    Text: SA NY O S E M I C O N D U C T O R CO RP 22E » i m u i h .ooo?oae o $3132 F e a tu re s • Adoption of FBET process • Low collector-to-emitter saturation voltage • F ast switching speed • Small-sized package A bso lu te M axim um R a tin g s atT a= 25°C


    OCR Scan     		PDF 7clc1707b DQ070aS A1728 2SA1728

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG90V2YS40 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG90V2YS40 HIGH P O W ER SW ITCHING APPLICATIONS U n it in mm M O TO R CONTROL APPLICATIONS 4-FAST-ON-TAB #110 The Electrodes; are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG90V2YS40 2-94C1A