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    70A RELAY Search Results

    70A RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    2SK3307-A Renesas Electronics Corporation Nch Single Power Mosfet 60V 70A 9.5Mohm Mp-88/To-3P Visit Renesas Electronics Corporation
    RJK1021DPN-00#00 Renesas Electronics Corporation Nch Single Power Mosfet 100V 70A 20Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK1021DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 100V 70A 20Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJK0703DPN-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 75V 70A 6.7Mohm To-220Ab Visit Renesas Electronics Corporation

    70A RELAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Audible Temperature Alarm For Controllers with Relay Outputs Model 70A-1 $ 18 Shown Model 70A-1 shown with the CN77000 Series controller; see specifications in this section MADE IN USA Low Noise Thermocouple Probes, See Section A. GKQSS-316G-12, $29 Model 70A-1, shown


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    PDF CN77000 GKQSS-316G-12, -220Vâ 0A-3-220V

    0N06

    Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.


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    PDF RFG70N06, RFP70N06, RF1S70N06SM RFP70 0N06S RFG70N06 O-247 O-220AB 175oC TB334 0N06 RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70

    glow relay

    Abstract: glow plug relay 70A RELAY
    Text: HG4237 Automotive Miniature PCB Power Relay FEATURES 70A continuous current capacity 70A Special construction improving contact performance Automotive-oriented design TYPICAL AUTOMOTIVE APPLICATIONS Glow plug timer unit Bypass relay for starting procedure


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    PDF HG4237 12VDC 15VDC glow relay glow plug relay 70A RELAY

    RFP70N03

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


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    PDF RFP70N03, RF1S70N03SM 0N03S O220AB O263AB RFP70N03

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


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    PDF FSJ160D, FSJ160R Rad Hard in Fairchild for MOSFET

    FSJ160D

    Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
    Text: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


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    PDF FSJ160D, FSJ160R O-254AA MIL-S-19500 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris

    RFP70N06

    Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω


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    PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. O-247 O-220AB O-263AB 175oC TB334 RFP70N06 RFP70N06 AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    AN9321

    Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
    Text: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


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    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. AN9321 AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334

    RFP70N06

    Abstract: No abstract text available
    Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


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    PDF RFP70N06 TA78440. O-220AB RFP70N06

    f1s70n03

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


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    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. 05e-4 11e-5) 1e-30 46e-4 48e-7) f1s70n03

    75339P

    Abstract: 75339 HUF75339G3 35E-1 75339G HUF75339 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 70A, 55V The HUF75339 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


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    PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HUF75339 1-800-4-HARRIS 75339P 75339 HUF75339G3 35E-1 75339G HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST

    RFP70N03

    Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
    Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model


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    PDF RFP70N03, RF1S70N03, RF1S70N03SM O-220AB 175oC O-262AA RF1S70N03SM 05e-4 RFP70N03 RF1S70N03SM9A RF1S70N03

    RFP70N06

    Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM


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    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM O-247 175oC RF1S70N06 RFP70N06 F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260

    2E12

    Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    PDF FSJ160D, FSJ160R 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3

    16E-5

    Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery


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    PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TB334, 1-800-4-HARRIS 16E-5 HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3

    Untitled

    Abstract: No abstract text available
    Text: RFK70N06 Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET September 1998 Features Description • 70A,60V • 175°C Operating Temperature The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­


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    PDF RFK70N06 RFK70N06 TA49007. 05e-4 11e-5) 1e-30 46e-4 48e-7) 23e-3 56e-6)

    Untitled

    Abstract: No abstract text available
    Text: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSJ055D, FSJ055R 36MeV/m MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSJ160D, FSJ160R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    rfp70n03

    Abstract: No abstract text available
    Text: [Q RFP70N03, RF1S70N03, RF1S70N03SM HARRIS S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 70A ,30V • rDS 0N = 0.01012 • Temperature Compensating PSPICE Model


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    PDF RFP70N03, RF1S70N03, RF1S70N03SM O-220AB O-262AA RF1S70N03SM 87e-3 71e-3 rfp70n03

    F1S70N03

    Abstract: rfp70n03
    Text: RFP70N03, RF1S70N03, RF1S70N03SM IHARRIS S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan
    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. Curve-12 87e-3 71e-3 50e-7 84e-9 51e-8) F1S70N03 rfp70n03

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan
    PDF RFP70N03, RF1S70N03, RF1S70N03SM 50e-7 84e-9 51e-8) 05e-4 11e-5) 1e-30

    F1S70N06

    Abstract: No abstract text available
    Text: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili­


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    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 05e-4 11e-5) 1e-30 46e-4 F1S70N06

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X FSJ160D, FSJ160R S em iconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSJ160D, FSJ160R MIL-S-19500

    75339P3

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    PDF HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TB334, 1-800-4-HARRIS 75339P3