Untitled
Abstract: No abstract text available
Text: Audible Temperature Alarm For Controllers with Relay Outputs Model 70A-1 $ 18 Shown Model 70A-1 shown with the CN77000 Series controller; see specifications in this section MADE IN USA Low Noise Thermocouple Probes, See Section A. GKQSS-316G-12, $29 Model 70A-1, shown
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CN77000
GKQSS-316G-12,
-220Vâ
0A-3-220V
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0N06
Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.
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RFG70N06,
RFP70N06,
RF1S70N06SM
RFP70
0N06S
RFG70N06
O-247
O-220AB
175oC
TB334
0N06
RFP70N06
RF1S70N06SM
TB334
RF1S70N06SM9A
RFG70N06
F1S70N06
rfp70
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glow relay
Abstract: glow plug relay 70A RELAY
Text: HG4237 Automotive Miniature PCB Power Relay FEATURES 70A continuous current capacity 70A Special construction improving contact performance Automotive-oriented design TYPICAL AUTOMOTIVE APPLICATIONS Glow plug timer unit Bypass relay for starting procedure
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HG4237
12VDC
15VDC
glow relay
glow plug relay
70A RELAY
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RFP70N03
Abstract: No abstract text available
Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB
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RFP70N03,
RF1S70N03SM
0N03S
O220AB
O263AB
RFP70N03
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSJ160D,
FSJ160R
Rad Hard in Fairchild for MOSFET
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FSJ160D
Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
Text: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ160D,
FSJ160R
O-254AA
MIL-S-19500
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
FSJ160R3
2E12
Rad hard MOSFETS in Harris
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RFP70N06
Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
O-247
O-220AB
O-263AB
175oC
TB334
RFP70N06
RFP70N06
AN9321
AN9322
RF1S70N06SM
RF1S70N06SM9A
RFG70N06
TB334
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AN9321
Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Text: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFP70N03,
RF1S70N03,
RF1S70N03SM
TA49025.
AN9321
AN9322
RF1S70N03
RF1S70N03SM
RF1S70N03SM9A
RFP70N03
TB334
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RFP70N06
Abstract: No abstract text available
Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFP70N06
TA78440.
O-220AB
RFP70N06
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f1s70n03
Abstract: No abstract text available
Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP70N03,
RF1S70N03,
RF1S70N03SM
TA49025.
05e-4
11e-5)
1e-30
46e-4
48e-7)
f1s70n03
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75339P
Abstract: 75339 HUF75339G3 35E-1 75339G HUF75339 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST
Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 70A, 55V The HUF75339 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced
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HUF75339G3,
HUF75339P3,
HUF75339S3,
HUF75339S3S
HUF75339
1-800-4-HARRIS
75339P
75339
HUF75339G3
35E-1
75339G
HUF75339P3
HUF75339S3
HUF75339S3S
HUF75339S3ST
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RFP70N03
Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model
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RFP70N03,
RF1S70N03,
RF1S70N03SM
O-220AB
175oC
O-262AA
RF1S70N03SM
05e-4
RFP70N03
RF1S70N03SM9A
RF1S70N03
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RFP70N06
Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
O-247
175oC
RF1S70N06
RFP70N06
F1S70N06
RF1S70N06SM
RFG70N06
RF1S70N06SM9A
AN7254
AN7260
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2E12
Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ160D,
FSJ160R
2E12
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
FSJ160R3
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16E-5
Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery
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HUF75339G3,
HUF75339P3,
HUF75339S3,
HUF75339S3S
TB334,
1-800-4-HARRIS
16E-5
HUF75339G3
HUF75339P3
HUF75339S3
HUF75339S3S
HUF75339S3ST
TA75339
TB334
75339S3
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Untitled
Abstract: No abstract text available
Text: RFK70N06 Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET September 1998 Features Description • 70A,60V • 175°C Operating Temperature The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea
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RFK70N06
RFK70N06
TA49007.
05e-4
11e-5)
1e-30
46e-4
48e-7)
23e-3
56e-6)
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSJ055D,
FSJ055R
36MeV/m
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSJ160D,
FSJ160R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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rfp70n03
Abstract: No abstract text available
Text: [Q RFP70N03, RF1S70N03, RF1S70N03SM HARRIS S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 70A ,30V • rDS 0N = 0.01012 • Temperature Compensating PSPICE Model
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OCR Scan
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RFP70N03,
RF1S70N03,
RF1S70N03SM
O-220AB
O-262AA
RF1S70N03SM
87e-3
71e-3
rfp70n03
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F1S70N03
Abstract: rfp70n03
Text: RFP70N03, RF1S70N03, RF1S70N03SM IHARRIS S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFP70N03,
RF1S70N03,
RF1S70N03SM
TA49025.
Curve-12
87e-3
71e-3
50e-7
84e-9
51e-8)
F1S70N03
rfp70n03
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Untitled
Abstract: No abstract text available
Text: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFP70N03,
RF1S70N03,
RF1S70N03SM
50e-7
84e-9
51e-8)
05e-4
11e-5)
1e-30
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F1S70N06
Abstract: No abstract text available
Text: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili
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OCR Scan
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
014i2
05e-4
11e-5)
1e-30
46e-4
F1S70N06
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Untitled
Abstract: No abstract text available
Text: H A R R IS X FSJ160D, FSJ160R S em iconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ160D,
FSJ160R
MIL-S-19500
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75339P3
Abstract: No abstract text available
Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery
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OCR Scan
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HUF75339G3,
HUF75339P3,
HUF75339S3,
HUF75339S3S
TB334,
1-800-4-HARRIS
75339P3
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