INVERTER BOARD Asus A6
Abstract: ALC662 ICS9LPRS479AGLFT IT8752 Asus VW 192 Asus R2112 r3673 NT5TU64M16 Asus P5
Text: 5 4 3 2 AMD CPU S1g2 F7Z BLOCK DIAGRAM D 1 Dual Channel DDR2 DDR2 400-800 SO-DIMM X 2 D Page 7 ~ 9 Page 3 ~ 6 HT 3.0 2.6GHZ HDMI Page 71 LVDS AMD Page 45 CRT Page 55 RS780M PCI-E Page 46 TVCARD PCIE X4 C MINICARD Page 10 ~ 18 C AMD Page 53 PCI 33MHz SB700
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RS780M
SB700
33MHz
R5C833
RTL8111C
ITE8752
ALC662
ICS9LPRPS51020
SI4800
INVERTER BOARD Asus A6
ALC662
ICS9LPRS479AGLFT
IT8752
Asus VW 192
Asus
R2112
r3673
NT5TU64M16
Asus P5
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Untitled
Abstract: No abstract text available
Text: BAS19W - BAS21W SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data • Fast Switching Speed • • Surface Mount Package Ideally Suited for Automated Insertion • • For General Purpose Switching Applications Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound,
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BAS19W
BAS21W
OT323
J-STD-020D
MIL-STD-202,
AEC-Q101
DS30118
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opto P113
Abstract: p112 opto LD1085-33 3v3 sot A9 sot323 jtms 100 V334 A18 sot M74HC126 ESDA6V1-5W6
Text: BOOT BOOT_EN SW2 SW1 +3V3 GND BOOT CLK CK RTCXTI RTCXTO +3V3 GND UARTx GND +3V3 +5V TX_0 RX_0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 MISO GND MOSI U2 I/O1 I/O5 GND I/O4 I/O2 I/O3 U3 not Reset 6 DBGRQS SCLK 5 4 ESDA6V1-5W 6-SOT323-6L 1 2 3 ESDA6V1-5W 6-SOT323-6L
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6-SOT323-6L
A12C36
M74HC14
STPM01
100nF
BC807-25
BAS70-04/SOT
opto P113
p112 opto
LD1085-33
3v3 sot
A9 sot323
jtms 100
V334
A18 sot
M74HC126
ESDA6V1-5W6
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ISL9504
Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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03/19/m
100-ohm
95-ohms
ISL10
ISL11
ISL9504
j4310
BD9828
ISL9504B
NVIDIA G84m
RN5VD30A-F
SLG2AP101
Q7080
88E8058
PP3V42G3H
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BUP213
Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S
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O-218AB
O-220AB
O-220
O-220FP
O-247
O-262
O-252
O-263
OT-323
OT-363
BUP213
BSS123L6327
BSS123E6327
bup314d
IPD06N03LAG
BSP170PE6327T
BSP315
SPD06N80C3XT
BSP295-L6327
BSP129E6327
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QFN10
Abstract: STG3682QTR STG5223qtr STG3856QTR amplifier QFN16 STG3692QTR STG3699QTR IEC-61000-4-2 STG3155DTR STG3159DTR
Text: Analog switches Selection guide November 2007 www.st.com High contact discharge ESD performance switches Package IEC-61000-4-2 ESD, contact discharge [kV] IEC-610004-2 ESD, air discharge [kV] Supply voltage Channel STG4159BJR Flip chip 7 10 15 1.65 to 4.8
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IEC-61000-4-2
IEC-610004-2
STG4159BJR
STG4158BJR
STG4259BJR
STMAV340
QFN10
STG3682QTR
STG5223qtr
STG3856QTR
amplifier QFN16
STG3692QTR
STG3699QTR
IEC-61000-4-2
STG3155DTR
STG3159DTR
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PDF
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RQW130N03
Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the
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2007-Dec.
50P5842E
RQW130N03
rqw200n03
sp8k10s
mosfet rqw 130
SP8K10
RQA200N03
mosfet rqa 130
RQW130
RQA130N03
RQW 130
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2SC1424
Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416
Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS
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NE734
NE73435)
NE734
OT-143)
24-Hour
2SC1424
2SC1733
pt 5767 Rf transistor
2SC2026
transistor 2sc2026
transistor "micro-x" "marking" 3
2SC2148
NE73400
NE73416
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PDF
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SPP80P06PIN-ND
Abstract: BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND
Text: Mosfets Cont. OptiMOS 2 Package Type ® Vds (V) TO-220AB N-CH 25 30 TO-220 N-CH 100 600 TO-220-3 N-CH 100 TO-251 N-CH 25 TO-262AB N-CH 25 D2-PAK N-CH 25 25 TO-252 N-CH 30 D-PAK N-CH 25 Bent up Leads DSO-8 N-CH 30 SUPERSO8 N-CH 30 25 TDSON-8 N-CH 30 25
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O-220AB
O-220
O-220-3
O-251
O-262AB
O-252
O-263
SPB80P06P
SPB10N10L
SPB80N10L
SPP80P06PIN-ND
BSS84P-L6327
BSS138N-L6327
IPD06N03LAG
BSC042N03LSG
IPD060N03LG
BSS138N L6327
BSS123L6327
BSS138N
SPP15P10PIN-ND
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CN30 capacitor
Abstract: CN32 NQPACK064SB nec 45 42 pin microcontroller 93 SOT89 NEC NEC Components Philippines
Text: Preliminary User’s Manual AB-065PI-64GK, AB-065PI-80GC, AB-065PI-100GF Application Boards AB-065PI Hardware Document No. U15676EE1V0UM00 Date Published August 2001 NEC Corporation 2001 Printed in Germany All brand names or product names are the property of their respective holders.
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AB-065PI-64GK,
AB-065PI-80GC,
AB-065PI-100GF
AB-065PI
U15676EE1V0UM00
CN30 capacitor
CN32
NQPACK064SB
nec 45 42 pin microcontroller
93 SOT89 NEC
NEC Components Philippines
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DBX18
Abstract: header 17x2 ITT 1b6 diode 1a6 SMD diode SMD diode B2 3Pin abx-5 LCD module 20X2 3.3v DBX26 X77A-G-001-01 DBX15
Text: S1D13747 S5U13747B00B PFBGA Socket Module Board User Manual Document Number: X77A-G-001-01 Status: Revision 1.0 Issue Date: 2005/10/20 SEIKO EPSON CORPORATION 2005. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in
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S1D13747
S5U13747B00B
X77A-G-001-01
X77A-G-001-00
DBX18
header 17x2
ITT 1b6 diode
1a6 SMD diode
SMD diode B2 3Pin
abx-5
LCD module 20X2 3.3v
DBX26
X77A-G-001-01
DBX15
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L33 TRANSISTOR
Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W
Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF
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BF747W
711DflEb
DD44170
OT323
BF747W
BF747.
UBC370
OT323.
L33 TRANSISTOR
transistor L33
npn l33
l33 sot23
l33 thermal
UBC370
transistor KIN
BF747
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Untitled
Abstract: No abstract text available
Text: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and
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OCR Scan
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BC807W;
BC808W
OT323
BC807W:
BC807-16W
BC807-25W
BC807W
BC807-40W
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PDF
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Untitled
Abstract: No abstract text available
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )
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OCR Scan
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Super323TM
OT323
ZUMT618
125mOat1
100MHz
100mA
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PDF
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bc870
Abstract: Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.
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OCR Scan
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OT323
BFR92AW
BFR92A.
BFR92AW
BC870
7110fiSL
bc870
Transistor BC870-40
BFR92a MARKING P2
TRANSISTOR MARKING CODE IAM
marking IAM transistor sot-23
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PDF
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marking 1GL
Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.
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OCR Scan
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BFR92AW
OT323
BFR92AW
BFR92A.
MBC870
7110flSb
marking 1GL
marking G SOT323 Transistor
BFR92A
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PDF
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MRF917T1
Abstract: Sot323 MRF917T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices
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OCR Scan
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SC-70)
MRF917T1
SC-7Q/SOT-323)
Cont55
IS22I
MRF917T1
Sot323 MRF917T1
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PDF
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2SC1424
Abstract: s2l sot23
Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF
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OCR Scan
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NE73435)
NE734
OT-23)
PACKAGEOUTUNE33
PACKAGEOUTUNE39
OT-143)
PACKAGEOUTUNE39
2SC1424
s2l sot23
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PDF
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MARKING GT SOT323
Abstract: z149 99 0437 12 05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.
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OCR Scan
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SC-70/SOT-323)
MRF577T1
SC-7Q/SOT-323)
Current068
IS22I
MRF577T1
MARKING GT SOT323
z149
99 0437 12 05
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Smatl Signal Line MRF927T1 MRF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors lc = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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OCR Scan
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SC-70)
MRF927T1
MRF927T3
393E-12
0E-12
38E-9
0E-15
92E-18
MRF927
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PDF
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transistor z 0607
Abstract: zt123
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon H igh-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.
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OCR Scan
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SC-70/SOT-323)
MRF577T1
IS22I
MRF577T1
transistor z 0607
zt123
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PDF
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24 LC 0261
Abstract: MRF927 42497 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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OCR Scan
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SC-70)
MRF927T1
RF927T3
0E-15
0E-12
38E-9
MRF927
SC-70
24 LC 0261
42497 transistor
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PDF
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2SC1424
Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F
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OCR Scan
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NE734
NE73435)
NE73400)
PACKAGEOUTUNE30
PACKAGEOUTUNE33
OT-23)
PACKAGEOUTUNE33
PACKAGEOUTUNE39
OT-143)
2SC1424
MARKING Dt3 sot23 transistor
2SC2148
017 545 71 32 02
j60 mic
mic J60
v3le
2SC202
2SC4185
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor D e sig n e d for low noise, w ide dynam ic range front end am p lifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices
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OCR Scan
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MRF577T1/D
SC-70/SOT-323)
MRF577T1
SC-70/SQT-323)
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PDF
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