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DSAFRZWS Abstract: No abstract text available Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711DfiSh BUK436-800A/B BUK436 -800A -800B DSAFRZWS
philips ID 35 Abstract: BUK436-800A Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711Qfl2b BUK436-800A/B BUK436 -800A -800B philips ID 35 BUK436-800A
PAL AM 16v8 Abstract: gal 16v8 programming specification 4A-FE 16V8 P3Q16V8-7A u106 Text: PHILIPS INTERNATIONAL b SE 711DfiSh G O b l T ì b T> T 74 « P H I N Philips Semiconductor« Low Voltage Products Preliminary specification 3 Volt BiCMOS Versatile GAL-type PLD DESCRIPTION FEATURES The P3Q16V8-7 is a V-type GAL device designed to operate over the 3.0 to 3.6 volt	OCR Scan	PDF	711DfiSh P3Q16V8â P3Q16V8-7 100mA 20-Pin 0408B P3Q16V8-7A 0400E PAL AM 16v8 gal 16v8 programming specification 4A-FE 16V8 u106
74F1763 Abstract: 74F1764 AN218 F1763 N74F1763A N74F1763N fast page mode dram controller U-33-H RL-7012 RL700 Text: PHILIPS INTERNATIONAL Philips Semiconductors-Slgnetics Document No. 853-1406 ECN No. 98150 Date of issue November 17,1989 Status Product Specification' FAST Products SflE D • FAST 74F1763 Intelligent DRAM Controller D C TYPE FEATURES • DRAM signal timing generator	OCR Scan	PDF	711062b QG52bDl 74F1764 32blt 711DflEb 00S2b07 74F1763 500ns 74F1763 AN218 F1763 N74F1763A N74F1763N fast page mode dram controller U-33-H RL-7012 RL700