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    720 SOT323 Search Results

    720 SOT323 Datasheets Context Search

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    7912

    Abstract: configuration of IC 7912 ST 7912 STB7102 4256 stmicroelectronics 1011 sot323 TA 8607
    Text: STB7102 0.5/2.5 GHz LO BUFFER AMPLIFIER PRELIMINARY DATA • OPERATING FREQUENCY 500-2500MHz • LOW CURRENT CONSUMPTION 4mA @ 2.7V • EXCELLENT ISOLATION (43dB @ 850MHz) • INPUT AND OUTPUT RETURN LOSS > 15dB • ULTRA MINIATURE SOT323-6L PACKAGE (1.15 x 1.8 x 0.8 mm)


    Original     		PDF STB7102 500-2500MHz 850MHz) OT323-6L OT323-6L STB7102, STB7102 OT143 7912 configuration of IC 7912 ST 7912 4256 stmicroelectronics 1011 sot323 TA 8607

    mbrf1060ctl

    Abstract: No abstract text available
    Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1


    Original     		PDF OD-123 BAT54W OT-323 BAT54WS BAT54A OT-23 BAT54C BAT54S mbrf1060ctl

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    Untitled

    Abstract: No abstract text available
    Text: MMBD4448W Surface Mount Switching Diodes SOT-323 Features — Fast switching speed. — High conductance. — For general purpose switching applications. — Surface mount package ideally suited for automatic insertion. Dimensions in inches and millimeters Applications


    Original     		PDF MMBD4448W OT-323 MMBD4448W 100mA 150mA

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    marking code PB surface mount diode

    Abstract: MMBD4448W 720 SOT323
    Text: BL Galaxy Electrical Production specification Surface Mount Switching Diode MMBD4448W FEATURES Pb z Fast switching speed. z High conductance. z For general purpose switching applications. z Surface mount package ideally suited Lead-free for automatic insertion.


    Original     		PDF MMBD4448W OT-323 BL/SSSDF021 marking code PB surface mount diode MMBD4448W 720 SOT323

    44S DIODE

    Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
    Text: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065


    Original     		PDF 0-04W 0-05W 0-06W Q62702-A1065 Q62702-A1066 Q62702-A1067 OT-323 44S DIODE Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720

    Untitled

    Abstract: No abstract text available
    Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.


    Original     		PDF MMBD4448W OT-323 OT-323 J-STD-020D 2002/95/EC 100mA 150mA Jun-2009, KSYR79

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT

    Untitled

    Abstract: No abstract text available
    Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.


    Original     		PDF MMBD4448W OT-323 OT-323 J-STD-020D 2002/95/EC

    J-STD-020D

    Abstract: MMBD4448W
    Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.


    Original     		PDF MMBD4448W OT-323 OT-323 J-STD-020D 2002/95/EC J-STD-020D MMBD4448W

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3

    BC850

    Abstract: bc849 marking code P
    Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-323 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		PDF BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-323 BC846 BC847 BC850 BC848 BC849 marking code P

    BC846AW

    Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		PDF BC846W BC849W OT-323 UL94V-0 BC847W BC848W BC846AW BC846W BC847AW BC847W BC848W BC849W BC856W BC859W

    BC846AW

    Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		PDF BC846W BC849W OT-323 UL94V-0 BC847W BC848W BC846AW BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B

    Untitled

    Abstract: No abstract text available
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		PDF BC846W BC849W OT-323 UL94V-0 BC847W BC848W

    SSF1320N

    Abstract: MosFET
    Text: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low


    Original     		PDF SSF1320N OT-323 OT-323 28-Aug-2012 SSF1320N MosFET

    VSO05561

    Abstract: No abstract text available
    Text: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004


    Original     		PDF 0-04W 0-05W 0-06W VSO05561 EHA07005 EHA07006 EHA07004 OT-323 VSO05561

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION „ FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF BC846-BC850 BC856 BC860 BC846L-x-AE3-R BC846G-x-AE3-R BC847L-x-AE3-R BC847G-x-AE3-R BC848L-x-AE3-R BC848G-x-AE3-R BC849L-x-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W


    OCR Scan     		PDF 10kii, 47kii) Q62702-C2280 OT-323 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel


    OCR Scan     		PDF 0-04W 0-05W 0-06W 2702-A OT-323 EHD07168 EHD07169

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    a2 marking

    Abstract: Q62702-A1066 Marking Code to on semiconductor 720
    Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065


    OCR Scan     		PDF Q62702-A1065 Q62702-A1066 Q62702-A1067 0-04W 0-05W 0-06W OT-323 EHD07I67 a2 marking Marking Code to on semiconductor 720