2DF30L
Abstract: 7200 b transistor STS2DNF30L marking 7200 so8
Text: STS2DNF30L Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications
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STS2DNF30L
2DF30L
7200 b transistor
STS2DNF30L
marking 7200 so8
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Si4364DY
Abstract: No abstract text available
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V
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Si4364DY
70ance,
S-03662--Rev.
14-Apr-03
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Si4364DY
Abstract: 70680
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19
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Si4364DY
S-20699--Rev.
20-May-02
70680
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Si4493DY
Abstract: Si4493DY-T1 S3142
Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7
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Si4493DY
Si4493DY-T1
S-31420--Rev.
07-Jul-03
S3142
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Si4451DY
Abstract: No abstract text available
Text: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch
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Si4451DY
S-03160--Rev.
17-Feb-03
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Untitled
Abstract: No abstract text available
Text: AP4409AGM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free SO-8 S S BVDSS -30V
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AP4409AGM-HF
AP4409A
125oC/W
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IEC947-4-3
Abstract: SOR867070
Text: okpac Relais statique monophasé de puissance Power Solid State Relay S/MON/SO867070/A/12/07/2004 page 1 / 6F/GB SOR867070 ❏ Relais statique synchrone adapté à la plupart des charges Zero Cross Solid State Relay designed for most types of loads. ❏ Sortie thyristors technologie TMS2 * permettant une longue durée
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S/MON/SO867070/A/12/07/2004
SOR867070
510VAC
IEC/EN61000-4-4
IEC/EN61000-4-5.
IEC/EN61ility
12Volts)
50Volts.
IEC947-4-3
SOR867070
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Si4451DY
Abstract: Si4451DY-T1 Si4451DY-T1-E3
Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS
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Si4451DY
Si4451DY-T1
Si4451DY-T1-E3
S-61005-Rev.
12-Jun-06
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Si4493DY-T1
Abstract: Si4493DY-T1-E3 Si4493DY
Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch
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Si4493DY
Si4493DY-T1
Si4493DY-T1-E3
S-61005-Rev.
12-Jun-06
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Untitled
Abstract: No abstract text available
Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7
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Si4493DY
Si4493DY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch
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Si4451DY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V
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Si4364DY
08-Apr-05
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heds 5310
Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»
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Untitled
Abstract: No abstract text available
Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch
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Si4493DY
Si4493DY-T1
Si4493DY-T1-E3
18-Jul-08
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Si4493DY
Abstract: Si4493DY-T1-E3
Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4493DY
2002/95/EC
Si4493DY-T1-E3
Si4493DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation
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Si4364DY
Si4364DY-T1
Si4364DY-T1-E3
08-Apr-05
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Si4364DY
Abstract: Si4364DY-T1-E3
Text: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
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Si4364DY
Si4364DY-T1-E3
Si4364DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch
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Si4493DY
Si4493DY-T1
Si4493DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS
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Si4451DY
Si4451DY-T1
Si4451DY-T1-E3
08-Apr-05
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heds 5310 encoder
Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
Text: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,
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AV00-0265EN
heds 5310 encoder
heds 5310
Quadrature Encoder 333 cpr
COLOR tv tube charger circuit diagrams
heds 5300 encoder
encoder heds 6310
schematic diagram igbt inverter welding machine
HP HEDS 5300
AFBR-5715
ACPL-C87
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Untitled
Abstract: No abstract text available
Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS
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Si4451DY
Si4451DY-T1
Si4451DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Si4451DY
2002/96/EC
Si4451DY-T1-E3
Si4451DY-T1-GE3
18-Jul-08
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so8b
Abstract: md40-7200
Text: AfúKm Coming Attractions M an A M P com pany Silicon Double Balanced Mixer 700-1000 MHz Features SO-8 • 7 dB Noise Figure/Conversion Loss • +14 dBm Input IP3 • 35 dB LO/RF Isolation • • • • MD40-7200 B H H o Orientation mark <20 dB LO to IF Isolation, RF to IF Isolation
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MD40-7200
MD40-7200
so8b
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T7525EC
Abstract: b562* Transistor Transistor BFT 98 LL4148F smd transistor SA4 transistor SMD PB01 A1s smd TRANSISTOR npo 121 j kck TGS 816 DSP16A
Text: A T & T flELEC I C b>4E » • Q05QQ2b GQGcm3G 4 b l MATTc! * Data Sheet February 1993 A lsr Microelectronics AT&T V32x-V42D V.32bis/FAX/V.42bis DeskTop Complete Modem Chip Sets Introduction The AT&T DeskTop Complete Modem Chip Set enables the modem designer to build a high-speed,
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GGS002b
V32X-V42D
32bis/FAX/V
42bis
68-Pin
005002b
84-Pin
T7525EC
b562* Transistor
Transistor BFT 98
LL4148F
smd transistor SA4
transistor SMD PB01
A1s smd TRANSISTOR
npo 121 j kck
TGS 816
DSP16A
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