Untitled
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Text: polyfet rf devices P282 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1107 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended lifetime. Low output capacitance
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F1107
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended
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F2201
1110AvenidaAcaso,
72410CH
G000241
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended
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F1207
060QfeOâ
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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F1063
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2013 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended lifetime. Low output capacitance
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F2013
72410CH
0DD023S
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1214 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended
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F1214
72maoi
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1022 PATENTED GOLD METALIZED General Description Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet process features gold metal for greatly extended lifetime. Low output capacitance
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F1022
1110AvenidaAcaso,
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1065 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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F1065
72410CH
D0DD151
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1116 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended
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F1116
t84-4210
72410CH
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