72424G Search Results
72424G Datasheets Context Search
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HBT 01 - 01G
Abstract: DG20
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MSC23T/PV2720A-XXBS9 152-Word 72-Bit MSC23T/DV2720A-xxBS9 16-Mb 168-pin 72-bit HBT 01 - 01G DG20 | |
LMN 317
Abstract: BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090
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MSM6895/MSM6896 MSM6895/MSM6896, 002157b LMN 317 BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090 | |
Contextual Info: K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX OODbST? T-SZ-13>-0°I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays with up to 8 grids with 35 anodes dots plus 5 annunciators. The |
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24E40 MSC7125-XX MSC7125-XX 16-bit b724240 T-52-13-09 | |
Contextual Info: OKI semiconductor MSM8 0 C3 1 F/MSM8 0 C5 1 F CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51 F m icrocontroller is a low power, high performance 8-bit single component device implemented in O KI's silicon gate complem entary metaf oxide sem iconductor |
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80C31F/M 80C51 MSM80C51F 16-bit b72M5M0 | |
Contextual Info: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is |
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OC360 CXZ360 E86831 OC360 24B40 L724240 | |
M5117405
Abstract: msm5117405a Q020G m51174
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MSM5117405A_ 304-Word MSM5117405A 26/24-pin cycles/32 M5117405 Q020G m51174 | |
MSM7507-01
Abstract: MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7508B MSM7509B
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MSM7507-01702/MSM7507-01703 MSM7507 MSM7508B MSM7509B. b7242M0 MSM7507-01 MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7509B | |
Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology. |
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MSM5141OOB/BL 304-Word MSM514100B/BL cycles/16ms, cycles/128ms MSM514100B/BL | |
514100AContextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated |
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MSM6691 MSM6691 theMSM6388, andtheMSM6588. TheMSM6691 MSM6388 MSM6588 16-bit 1100A 11001A) 514100A | |
Contextual Info: O K I Semiconductor_ MSM5 1 2 8 0 5 A_ 262,144-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM512805A is a 262,144-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM512805A achieves high integration, high-speed operation, and low-power |
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MSM512805A_ 144-Word MSM512805A 26/24-pin 512cycles/8ms | |
m65512
Abstract: MSM65512 circuit diagram cr-p2 65p512 MSM65512 MSM65P512 AD0P07 M-6551
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MSM65512/65P512 MSM65512 nX-8/50 10MHz MSM65P512, Se512/65P512 D23S44 M65512/65P512 DD23545 m65512 MSM65512 circuit diagram cr-p2 65p512 MSM65P512 AD0P07 M-6551 | |
D010
Abstract: OLD234 910nm
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OLD234 OLD234 72424D 754E40 Ifm/100 b724240 001fifl72 D010 910nm | |
Contextual Info: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS |
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10-mA Pfl140/1 b7E4240 b7242L | |
B72LContextual Info: O K I Semiconductor MSM66P54-01702/03/04 MSM6650 family 1 Mbit OTP Built-in Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM66P54 is a single-chip CMOS speech synthesis LSI that has an on-chip OTP One Time PROM for speech data storage. This LSI is the OTP version for on-chip mask ROMs from the |
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MSM66P54-01702/03/04 MSM6650 MSM66P54 MSM6652 MSM6656. 12bit 40dB/oct AR76-202. B72L | |
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Contextual Info: O K I Semiconductor MSM532030B 131,072-Word x 16-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM532030B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532030B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times |
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MSM532030B 072-Word 16-Bit MSM532030B MSM532020B | |
Contextual Info: O K I electronic components T36CP2, T36CP3, T54LCP Photo capsule GENERAL DESCRIPTION The T36CP2/T36CP3/T54LCP are sensors that are most suited to paper detection. For superior dustproof packaging and easy mounting, a phototransistor can be sealed encapsulated into a |
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T36CP2, T36CP3, T54LCP T36CP2/T36CP3/T54LCP T36CP2 b724H40 | |
l6d sensor
Abstract: MSM64164C almat P32CO
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MSM64164C MSM64164C 256-nibble L72M240 l6d sensor almat P32CO | |
MSM411001-10RS
Abstract: MSM411001-12RS
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b754S4D MSM411001 576-BIT MSM411001-10RS MSM411001-12RS | |
65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
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b72424D 13TB7 MSM65524/65P524 MSM65524 nX-8/50 10MHz MSM65P524, E424D 65P524 SFT 352 0040H MSM65P524 TI OAE | |
FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
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ISM6258/MSM6258V 6388/M 12-bit MSM6258 MSM6588. 7542M0 MSM6258/MSM6258V MSM80C85 b7E4240 FST 460 transistor 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 | |
L72424D
Abstract: automatic meter reading "Optical Coupler" ocm220
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10-mA b724240 OCft/1240/241 L72424D 11DS4 L724240 L72424D automatic meter reading "Optical Coupler" ocm220 | |
5116100Contextual Info: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology. |
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MSM5116100 216-Word MSM5116100 cycles/64ms CA100 2H240 b724240 5116100 | |
MSM51V16100Contextual Info: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology. |
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MSM51V16100_ 216-Word MSM51V16100 cycles/64ms MSM51V16100 b724240 001fl35b | |
SGCT
Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
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MSM7586-01 MSM7586 SGCT sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8 |