plessey
Abstract: BS107P
Text: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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72ED533
BS107P
on20533
550S33
00DSSQ5
72SG533
7EEG533
plessey
BS107P
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ZVP2110L
Abstract: ZVP2110 g291
Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive
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ZVP2110
G-290
722DS33
G-291
G-292
G-293
ZVP2110L
ZVP2110
g291
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BCW61DR
Abstract: No abstract text available
Text: plessey "ÏÏB s e m i c o n d /d i s c r e t e » F|7 SS05 33 DOOtitiBO = r ~T' PNP silicon planar small signal transistor BCW 61 A B S O L U T E M A X IM U M R A T IN G S Parameter Collector-Emitter Voltage Collector-Emitter Voltage Sym bol Emitter-Base Voltage
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