C3063
Abstract: c3063 japan SCR 600
Text: MOTOROLA O rder this docum ent by M QC3061/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output MOC3061 MOC3062 MOC3063* [IFT = 15 m A Max] [IFT = 10 m A Max]
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QC3061/D
MOC3061
MOC3062
MOC3063*
C3061,
MOC3062
MOC3063
115/240ure
MOC3Q61/D
MOC3061/D
C3063
c3063 japan
SCR 600
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triac driver opto moc3021
Abstract: MOC3Q23 Motorola Application Note AN-780A
Text: MOTOROLA O rder this docum ent by M QC3020/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Random-Phase Optoisolators Triac Driver Output MOC3021 MOC3022 MOC3023* [IFT = 15 m A Max] [IFT = 10 m A Max]
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QC3020/D
MOC3021
MOC3022
MOC3023*
MOC3020
MOC3020/D
triac driver opto moc3021
MOC3Q23
Motorola Application Note AN-780A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M QC3081/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA SETI ® SEMKO DEMKO BABT NEMKO G lo bal Optoisola to r 6-P in DIP Zero-Cross Optoisolators Triac Driver Output MOC3081 M OC3082 [IFT = 15 m A Max] [IFT = 10 m A Max]
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QC3081/D
MOC3081
OC3082
C3081,
MOC3082
MOC3083
--------------------------------MQC3081/D
MOC3081/D
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MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
MOC3001
MOC3000
scr optoisolator
mr5060
SCR GATE DRIVER
IEC204AXK
VDE0113
VDE0160
VDE0832
VDE0833
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k 6115
Abstract: dc to dc Optoisolator Optoisolator MOC8080 VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6-Pin D IP O p to iso lato r High Tem perature D arlington O utput • • • • • • Convenient Plastic Dual-ln-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
VDE0883/
30A-02
k 6115
dc to dc Optoisolator
Optoisolator
MOC8080
VDE0160
VDE0832
VDE0833
IEC-204
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4N40
Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65VDE0860,
c0nr6urat10n
30A-02
4N40
MR5060
scr bt series 200 A
4N39
IEC204A
VDE0113
VDE0160
VDE0832
VDE0833
scr optoisolator
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MOC3002
Abstract: MOC3003 MOC3007 SCR 25a IEC204A VDE0113 VDE0160 VDE0832 VDE0833 SCR TRIGGER PULSE
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M O C3002 M O C3003 M O C3007 6 -P in D IP O p t o is o la t o r s SC R Output T h e se d e v ic e s c o n s is t of g a lliu m a rse n id e infrared-em itting d io d e s optica lly c o u p le d to p h o to se n sitiv e silic o n co ntrolled rectifiers SCR . T h e y are d e s ig n e d for a p p lication s
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MOC3002,
MOC3007
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b
30A-02
MOC3002
MOC3003
MOC3007
SCR 25a
IEC204A
VDE0113
VDE0160
VDE0832
VDE0833
SCR TRIGGER PULSE
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MOC119
Abstract: VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA H S E M IC O N D U C TO R TECHNICAL DATA M O C 119 6 -P in D IP O p to is o la to r Darlington Output T h is device c o n s is ts of a galliu m arse n id e infrared em itting d iod e optica lly c o u p le d to a m on o lith ic silic on p h o to d a rlin gto n detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
MOC119
VDE0160
VDE0832
VDE0833
IEC-204
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Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
Y14SM
VDE0883
MOC8030
MOC8050
VDE0160
VDE0832
VDE0833
IEC204
IEC-204
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA T VDE O UL @ 1 CSA SETI SEM KO ® DEM KO NEM KO BABT MOC8O8O G l o b a l O p t o i s o la t o r 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device
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OC8080/D
MOC8080/D
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C3162
Abstract: 13TRIAC c3163
Text: MOTOROLA O rder this docum ent by M OC3162/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL < § •. CSA SETI SEM K O ® ® DEMKO NEMKO BABT MOC3162 MOC3163* [IFT = 10 m A M ax] G lobalO ptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output
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OC3162/D
C3162
13TRIAC
c3163
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MOTOROLA 813
Abstract: c8107 8107 4 pin dip
Text: MOTOROLA Order this document by MOC8IO6/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® CSA SETI SEMKO NEMKO DEMKO BABT Global Optoisolator 6-Pin DIP Optoisolators for Power Supply Applications No Base Connection MOC8 IO 6 MOC8107 MOC8 IO 8 [CTR = 50-150%]
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MOC8107
MOTOROLA 813
c8107
8107 4 pin dip
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H11AV1
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices
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H11AV1/D
H11AV1
11AV2
H11AV2
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by H11A1/D SEMICONDUCTOR TECHNICAL DATA & T O VD E UL ® CSA SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator H11A1* [C TR = 50% Min] 6-Pin DIP Optoisolators Transistor Output 'M o to ro la Preferred Device The H11A1 device consists of a gallium arsenide infrared emitting diode
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H11A1/D
H11A1*
H11A1
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C3051
Abstract: OC305 C3052 MOC3Q51
Text: MOTOROLA O rder this docum ent by MOC3Q51/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL C SA SETI SEM KO DEMKO NEM KO BABT MOC3051 MOC3052* [IFT = 15 m A Max] G lo b a lO p t o is o la t o r 6-Pin DIP Random-Phase Optoisolators Triac Drivers [IFT = 10 m A Max]
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MOC3Q51/D
C3051
MOC3051
MOC3052*
MOC3051/D
OC305
C3052
MOC3Q51
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PDF
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c8050d
Abstract: C 8050 d C8050 C-8050 d 8050 D
Text: MOTOROLA O rder this docum ent by M O C 8050/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL ® CSA SETI SEM K O DEMKO NEMKO BABT M OC8030 M OC8050 [C TR = 300% Min] G lobalO ptoisolator 6-P in DIP Optoisolators Darlington Output No Base Connection [C TR = 500% Min]
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8050/D
OC8030
OC8050
OC8050/D
MOC8050/D
c8050d
C 8050 d
C8050
C-8050 d
8050 D
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601 Opto isolator
Abstract: H11L1 H11L2 030k0 730C-04 motorola h11l1 F9111 639S H11L1 Case 730A-04
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE UL CSA ®®® SETI SEMKO DEMKO NEMKO BABT GlobalOptoisoIator 6 -Pin DIP Optoisolators Logic Output H11L1* H11L2 pF on s 1.6 mA Max] flF(or)« 10 mA Max] •Motorola Preferred Device The H11L1 and H11L2 have a gallium arsenide IRED optically coupled to a
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H11L1
H11L2
0CH1047
601 Opto isolator
030k0
730C-04
motorola h11l1
F9111
639S
H11L1 Case 730A-04
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC D IO D ES/O PTO b4E D b 3 fc,7 2 5 S DOflhbSfl Efib MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO ca VDE UL C SA BS ® SEMKO SETI DEM KO NEMKO BABT 4N38 4N38A 6-Pin D IP O ptoisolators Transistor Output [CTR = 20% Min] STYLE 1 PLASTIC The 4N38 and 4N 38A devices consist of a gallium arsenide infrared em itting diode
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4N38A
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motorola h11l1
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA 6-P in D IP O p to is o la to rs Logic Output . . . g a lliu m arsen id e IRED o p tic a lly c o u p le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lica tio n s re q u irin g e le c tric a l is o la tio n , fast
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H11L1
motorola h11l1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO a VDE UL CSA SETI <D <B> SEMKO DEMKO BS NEM KO CNY17-1 CNY17-2 SAßT [CTR = 40-80%] 6-Pin DIP Optoisolators Transistor Output [CTR = 63-125%] CNY17-3 CTR = 100-200%] Motorola Preferred Devices The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium arsenide infrared
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CNY17-1,
CNY17-2
CNY17-3
CNY17-1
CNY17-2
CNY17-3
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PDF
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C8050
Abstract: C3050
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.
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E54915
30A-02
C8050
C3050
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C8204
Abstract: MOC8204 MOTOROLA
Text: MOTOROLA SC D I O D E S / O P T O b 4 E T> b 3 L 7 B S 5 a D a b 725 7 4^ MOTOROLA SEMICONDUCTOR H TECHNICAL DATA & TO VDE UL CSA SETI SEMKO ® D EM KO ® BS NEM KO BABT M O C8204* [C TR = 20% Min] M OC8205 M OC8206 6-Pin D IP O ptoisolators High V oltage Transistor Output
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C8204*
MOC8204,
MOC8205
MOC8206
OC8205
OC8206
MOC82Q5,
MOC82Q6
C8204
MOC8204 MOTOROLA
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al330
Abstract: tic triac MOC3061
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA *1 & VDE UL ® BS SEMKO DEMKO NÊMKO BABT ® SETI CSA MOC3081 MOC3082 M OC3083 [IFT * IS m A Max] 6-Pin DIP Optoisolators Triac Driver Output 800 Volts [IFT > 10 mA Max] [IFT = 5 mA Max] The MOC3O01, M OC3082 and M OC3083 devices consist of gallium arsenide Infrared
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MOC3O01,
OC3082
OC3083
al330
tic triac
MOC3061
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