sot-363 702
Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Text: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
sot-363 702
MPS5172 "cross-reference"
BC237
BC307
MMVL3700T1
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low noise transistors bc638
Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
low noise transistors bc638
BC548
MPS5172 "cross-reference"
BC237
LOW NOISE BC638
BC449 "cross-reference"
bc307b
DTC114E SERIES
2N6520 DIODES
MPF4856
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SN30SC4
Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
Text: RECTIFIER DIODES Low frequency rectifying Single Diodes M1F 1F Absolute Maximum Ratings Type No. Color Code VRM M1F60 80 D1F20 60 60A D1N20 60 DINF60 D2F20 60 D3F60 D4F60 S2V20 60 S3V20 60 — — — — — — — — — — — — Red Blue Red Blue Tj
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M1F60
D1F20
D1N20
DINF60
D2F20
D3F60
D4F60
S2V20
S3V20
D1CS20
SN30SC4
D15VBA60
sivb
s4vb bridge rectifier
rectifier s1wb
smd 1f
SIVBA20
SMD 741
4 terminal bridge rectifier S4VB
D25VB20
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bd 743 transistor
Abstract: 9410A bd 743
Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc
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MMJT9410
OT-223
bd 743 transistor
9410A
bd 743
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2SC1741A
Abstract: SMW300 TP2500
Text: S -? > v 7. $ /Transistors 2SC1741A/2SC1741 AS 2SC1 741 A a Z S v l 741 AS wmjm * NPN y U = l> V ÿ / v W Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. t t t t V T i W m s - T t e • ft* 1 V c e o = 50V, lc = 5 0 0 m A t « S E , 2) VcE sat)*'” 0 .1 V Typ. (at lc = 150m A ,
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2SC1741A/2SC1741
2SC1741A
2SC1741AS
SMW300
TP2500
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Untitled
Abstract: No abstract text available
Text: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.
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PXT4403
PXT4401.
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO L T D SSE 7TÏD 741 D QQ O ' l ?' 420 Silicon NPN Epitaxial Planar T ^ 3 ☆Switching Transistor 2SC4130 Application Example : «SAKJ S - lí •FM20 • Outline Drawing 4 - ■ Switching Requlator and General Purpose_ Electrical Characteristics
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2SC4130
10Omax
100max
400mm
45x01
T0220)
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IMBT3904
Abstract: ITT INTERMETALL
Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.
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4bfi2711
IMBT3903,
IMBT3904
IMBT3905
IMBT3906
IMBT3903
IMBT3904
O-236)
15000Hz
ITT INTERMETALL
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *
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Temp-65Â
S10Kohm
J5SI-//-73
lo-32
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darlington pair transistor
Abstract: mml 600 33T4 operational amplifier-741
Text: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE T O -9 9 8 LEADS _ T p l / —• ? / _ Absolute Maxim um Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T
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Temp-65Â
T-79-or-iÃ
O-237
darlington pair transistor
mml 600
33T4
operational amplifier-741
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PDF
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darlington pair transistor
Abstract: Voltage Regulator 723 operational amplifier-741 IC cd 7400 operational amplifier 741 IC 723 voltage regulator CIL TRANSISTOR voltage regulator IC 723 7400 TRANSISTOR TO-105
Text: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H _ j- OPERATIONAL AMPLIFIER 741 J5SI-//-73 PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *
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Temp-65Â
T-79-or-iÃ
O-100
O-105
O-105
O-106
TQ-106
TQ-106
DO-35
darlington pair transistor
Voltage Regulator 723
operational amplifier-741
IC cd 7400
operational amplifier 741
IC 723 voltage regulator
CIL TRANSISTOR
voltage regulator IC 723
7400
TRANSISTOR TO-105
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PDF
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darlington pair transistor
Abstract: Voltage Regulator 723 IC cd 7400 178MIN 33T4 TQ-106 sis 741 U1514 Joy Signal
Text: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- J 5 S I-//-7 3 PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *
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Temp-65Â
T-79-or-iÃ
O-237
darlington pair transistor
Voltage Regulator 723
IC cd 7400
178MIN
33T4
TQ-106
sis 741
U1514
Joy Signal
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PDF
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Untitled
Abstract: No abstract text available
Text: SSE D • 7^ D 741 DGDlllti ìfi? « S A K J STA403A Silicon NPN Triple Diffused Planar Darlington ■Maximum Ratings Ta=250 C ollector-to-B ase Voltage VCBO 120 V Collector-to-E m itter Voltage VCEO 100 V Em itter-to-Base Voltage V ebo 6 V Collector Current
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STA403A
STA300
STA400
45max
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PDF
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE 2SC3519 2SC3519A /-r>i “ 25*C V Absolute M ax im u m Ratinas “ Symbol VCBO VcEO Vebo lc Ib Pc T) 2SC3519 160 160 2SC3519A 180 180 Unit — rVr — • 7^D 741 DGQCnsa 2flfl HSAKJ Silicon NPN Epitaxial Planar ☆APT ☆Complement to type 2SA1386 thru 2SA1386A
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2SC3519
2SC3519A
2SA1386
2SA1386A
MT-100
100max
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transistor BD6
Abstract: bd645 transistor BD643 H 649 A transistor
Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
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BD643;
BD645;
BD647;
BD649;
BD651
7110fi2b
BD644,
BD646,
BD648,
BD650
transistor BD6
bd645 transistor
BD643
H 649 A transistor
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marking code P2T
Abstract: PXT4401 PXT4403 transistor marking code p2T
Text: m bfaSBTBl 0025^82 741 * A P X N AMER PHILIPS/DISCRETE PXT4403 fc.7E I> SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar e p ita xia l tran sisto r, housed in a SO T89 envelope. It is intended fo r linear sw itch in g applications. The co m p le m e n tary ty p e is P X T4401.
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PXT4403
PXT4401.
marking code P2T
PXT4401
PXT4403
transistor marking code p2T
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PDF
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lg bd645
Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
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BD643;
BD645;
BD647;
BD649;
BD651
7110fl2b
T0-220
BD644,
BD646,
BD648,
lg bd645
darlington bd 645
BD649 philips
bd649 PNP transistor
BD649
B0645
BD645
BD643
BD646
BD647
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PDF
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Untitled
Abstract: No abstract text available
Text: SINKEN ELECTRIC CO LTD SSE ]> • 7^741 0GG1522 Dbl « S A K J SLA4313 Silicon NPN, PNP Epitaxial Planar ■Maximum Ratings Ta=250 ■; f y r n tfo r ,. C o lle c to r-to -B a s e V o lta g e VCBO 35 -3 5 V C o lle c to r-to -E m itte r V o lta g e VCEO 35
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0GG1522
SLA4313
STA300
STA400
45max
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PDF
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BC 741
Abstract: No abstract text available
Text: DÍV1CE TYPE PACKAGE 8VCEO BVCBO BVEBO ICBO VCB V i M IN M AX HFE @ VC i IC (V | M IN M AX (V l-n A ) COB FT |p l| M A X < M H*Ì NF (d til M A X 5 5 5 5 5 15 15 15 15 15 30 30 25 25 25 180-460 380-800 180-800 180-460 380-800 5 5 5 5 5 2 2 2 2 4 5 4 5
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BC178B
BCI78C
BC179B
BCI78C
BCI82K
BC182KA
BC187KB
0C183K
HC7I71
BC7I71
BC 741
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PDF
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2N5415
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25
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O-39/TO-5
2N3867
2N3868
2N4930
2N4931
2N5094
2N5149
2N5153
2N5415
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PDF
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IC 741 1 PC
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4684 ST0R0B0 FLASH APPLICATIONS. Unit in ran MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX 5.2 ± 0.2 . High DC Current Gain: hFE=800~3200 VcE=2V, Ic=0.5A hFE=250(Min.)(V c e =2V, Ic =4A) in . Low Collector Saturation Voltage
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2SC4684
IC 741 1 PC
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1485 2SD1485 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1054 ■ Features • V ery good linearity of DC current gain hFE • Wide area of safety operation (ASO) • High transition frequency (ft)
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2SD1485
2SB1054
bT32flS2
Di485
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PDF
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MG100H2CL1
Abstract: ic 741 free MG100H2CL
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-05,3±Ol5 FEATURES : . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE= 80 Min. (Ic=100A)
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MG100H2CL1
T-jS125`
MG100H2CL1
ic 741 free
MG100H2CL
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PDF
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hfe1
Abstract: KSC2001 741 Hfe
Text: KSC2001 NPN SILIC O N T RA N SIST O R GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW TO-92 High hre and LOW VCE(sat) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSC2001
100mA
90racteristic
700mA
700mA,
hfe1
KSC2001
741 Hfe
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