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    74F219 Search Results

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    74F219 Price and Stock

    onsemi 74F219PC

    IC RAM 64BIT PARALLEL 16DIP
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    DigiKey 74F219PC Tube 25
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    Rochester Electronics LLC 74F219SJ

    IC RAM 64BIT PARALLEL 16SOP
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    DigiKey 74F219SJ Bulk 231
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    Fairchild Semiconductor Corporation 74F219PC

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    Bristol Electronics 74F219PC 287
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    Quest Components 74F219PC 40
    • 1 $7.5
    • 10 $3.75
    • 100 $3.75
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    National Semiconductor Corporation 74F219PC

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    Bristol Electronics 74F219PC 60
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    Quest Components 74F219PC 292
    • 1 $7.5
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    • 100 $4.625
    • 1000 $4.125
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    74F219PC 203
    • 1 $7.5
    • 10 $7.5
    • 100 $3.25
    • 1000 $3
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    National Semiconductor Corporation 74F219DC

    STANDARD SRAM, 16X4, 20NS, CMOS, CDIP16
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 74F219DC 20
    • 1 $15
    • 10 $7.5
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    74F219 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    74F219 Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219 Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219 National Semiconductor 64-Bit Random Access Memory with TRI-STATE Outputs Original PDF
    74F219A Philips Semiconductors 64-bit TTL bipolar RAM, non-inverting (3-State) Original PDF
    74F219A Philips Semiconductors 64-Bit TTL bipolar RAM, non-inverting (3-State) Scan PDF
    74F219CW Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219DC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    74F219PC Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219PC National Semiconductor 64-Bit Random Access Memory with TRI-STATEE Outputs Original PDF
    74F219PC Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Scan PDF
    74F219PC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    74F219PCQR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    74F219PCX Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219SC Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219SC National Semiconductor 64-Bit Random Access Memory with TRI-STATEE Outputs Original PDF
    74F219SC Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Scan PDF
    74F219SC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    74F219SCX Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF
    74F219SJ Fairchild Semiconductor MEMORY, 64-Bit Random Access Memory with 3-STATE Outputs, SOP, 16-Pin Original PDF
    74F219SJ Fairchild Semiconductor 64-Bit Random Access Memory with 3-STATE Outputs Original PDF

    74F219 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74F189

    Abstract: 74F219 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E
    Text: Revised September 2000 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original
    PDF 74F219 64-Bit 74F219 16word 74F189 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74F219A 64-bit TTL bipolar RAM, non-inverting 3-State Product specification IC15 Data Handbook Philips Semiconductors 1996 Jan 05 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, non-inverting (3-State) FEATURES 74F219A


    Original
    PDF 74F219A 64-bit 74F219 74F189A) 74F219A C3F219A 74F219

    74F219

    Abstract: 74F189 74F219PC 74F219SC M16B MS-001 MS-013 N16E
    Text: Revised January 2004 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original
    PDF 74F219 64-Bit 74F219 16word 74F189 74F219PC 74F219SC M16B MS-001 MS-013 N16E

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E
    Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are


    Original
    PDF 74F219 64-Bit 16-word 64 CERAMIC LEADLESS CHIP CARRIER LCC 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are


    Original
    PDF 74F219 64-Bit 16-word

    74F219

    Abstract: 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E
    Text: 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are


    Original
    PDF 74F219 64-Bit 16-word 74F219 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E

    Untitled

    Abstract: No abstract text available
    Text: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a


    Original
    PDF 54F219 74F219 74F219 64-Bit SNOS173A

    74F189

    Abstract: 74F219 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E
    Text: Revised July 1999 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original
    PDF 74F219 64-Bit 74F219 16word 74F189 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics FAST 74F219A Document No. 853-1308 ECN No. 98907 Date of Issue February 23,1990 Status Product specification 64-bit TTL bipolar RAM Non-inverting 3-State Memory Products FEATURES TYPE • High speed performance TYPICAL ACCESS TIME


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    PDF 74F219A 64-bit 74F219 74F189A) 74F219A C3F219A 74F219 16-pin

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74F219A 64-bit TTL bipolar RAM, non-inverting 3-State Product specification 1996 Jan 05 IC15 Data Handbook Philips Semiconductors PHILIPS Philips Sem iconductors Product specification 64-bit TTL bipolar RAM, non-inverting (3-State) FEATURES


    OCR Scan
    PDF 74F219A 64-bit 74F219A 74F219 74F189A) C3F219A 74F219

    70typ

    Abstract: No abstract text available
    Text: Signatic* Document No. 853-1308 ECN No. 98907 Date of issue February 23,1990 Status Product Specification FAST 74F219A 64-Bit TTL Bipolar RAM, Non-Inverting 3-State FAST Products FEATURES • High speed performance • Replaces 74F219 • Address access time: 8 ns max vs


    OCR Scan
    PDF 74F219A 64-Bit 74F219 74F189A) C3F219A 74F189 74F219A 70typ

    74F189

    Abstract: 74F219 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E
    Text: June -1988 Revised July 1999 S E M IC O N D U C TO R T M 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features T he 7 4F 219 is a high-speed 64-bit RAM organized as a 16w ord by 4 -bit array. Address inputs are buffered to m ini­


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    PDF 74F219 64-Bit 74F219 16-word 74F189 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E

    Untitled

    Abstract: No abstract text available
    Text: Signetics FAST 74F219A FAST Products 64-Bit TTL Bipolar RAM, Non-Inverting 3-State Preliminary Specification FEATURES • Address access time: 10 ns • Power dissipation: 4.3 m W /blttyp TYPE TYPICAL ACCESS TIME TYPICALSUPPLY CURRENT (TOTAL) 74F219A 10ns


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    PDF 74F219A 64-Bit 74F189A) 16-Pin N74F219AN N74F219AD

    Untitled

    Abstract: No abstract text available
    Text: 10 yw\ National Jut Semiconductor <D 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mise loading and are fully decoded on-chip. The outputs are


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    PDF 54F/74F219 64-Bit 16-word

    Untitled

    Abstract: No abstract text available
    Text: s e m ic o n d u c t o r June -1988 Revised Ju ly 1999 74F219 64-Bit Random Access Memory with 3-STATE Outputs Features • 3-STATE outputs for data bus applications ■ Buffered inputs m inim ize loading ■ Address decoding on-chip ■ Diode clam ped inputs m inim ize ringing


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    PDF 74F219 64-Bit 74F189

    Untitled

    Abstract: No abstract text available
    Text: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


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    PDF 74F219 64-Bit 16-word LUUJ13J 4JL5JL6JL7J18| 16-Lead 16-Lead

    Untitled

    Abstract: No abstract text available
    Text: 219 54F/74F219 Connection Diagrams 64-Bit Random Access Memory W ith 3-State Outputs A o[ T u ] vcc Ts| A csQE Description The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. A ddress in p u ts are buffered to m inim ize loading and are fu lly


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    PDF 54F/74F219 64-Bit 16-word 54F/74F

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philip* Semlconductors-Signetlc* FAST Products 64-Bit TTL bipolar RAM, non-inverting 3-State FEATURES • 3-state outputs • High speed performance • Replaces 74F21974F219A in 150 mil wide SO is preferred options for new designs


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    PDF 64-Bit 74F219A 74F219 74F189A) 74F219A C3F219A 74F219 500ns

    Untitled

    Abstract: No abstract text available
    Text: 219 54F/74F219 Connection Diagrams 64-Bit Random Access Memory With 3-State Outputs Description The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3-state and are in the high-impedance


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    PDF 54F/74F219 64-Bit 16-word

    74F189A

    Abstract: 74F219 74F219A C3F219AD N74F219AD N74F219AN 98907
    Text: NAP C/ S I G N E T I C S S7E D B b b S S T S M 00707flfi ibû H S I C 3 Philip» Sem lconductort-Signetic* FAST Products Product specification 64-Bit TTL bipolar RAM, non-inverting 3-State 74F219A T - t u - z z - o ^ FEATURES • 3-state outputs • High speed performance


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    PDF 64-Bit 74F219A 74F219 74F189A) 74F219A C3F219A 74F219 74F189A C3F219AD N74F219AD N74F219AN 98907

    Untitled

    Abstract: No abstract text available
    Text: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


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    PDF 54F/74F219 64-Bit 16-word L5D11PP Q0flE33b

    F189

    Abstract: No abstract text available
    Text: 219 54F/74F219 Connection Diagrams 64-Bit Random Access M em ory W ith 3-State O utputs Té] vc T T ] Ai c s d w l [7 ï7 | a 2 [7 Tâl A3 Description T he ’F219 is a h ig h -s p e e d 6 4 -b it RAM o rg a n iz e d as a 16-word by 4 -b it array. A d d re s s in p u ts are b u ffe re d to m in im iz e lo a d in g and are fu lly


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    PDF 54F/74F219 64-Bit 16-word 54F/74F F189

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R -n 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. A ddress inputs are buffered to m ini­ mize loading and are fully decoded on-chip. The outputs are


    OCR Scan
    PDF 74F219 64-Bit 16-word

    Untitled

    Abstract: No abstract text available
    Text: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


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    PDF 54F/74F219 64-Bit 16-word