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    74N20P Search Results

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    74N20P Price and Stock

    Littelfuse Inc IXFH74N20P

    MOSFET N-CH 200V 74A TO247AD
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    DigiKey IXFH74N20P Tube 503 1
    • 1 $7.61
    • 10 $7.61
    • 100 $4.70767
    • 1000 $3.90851
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    Newark IXFH74N20P Bulk 300
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    RS IXFH74N20P Bulk 8 Weeks 30
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    • 100 $6.05
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    IXYS Corporation IXFV74N20P

    MOSFET N-CH 200V 74A PLUS220
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    DigiKey IXFV74N20P Box
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    Littelfuse Inc IXTT74N20P

    MOSFET N-CH 200V 74A TO268
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    DigiKey IXTT74N20P Tube 300
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    Newark IXTT74N20P Bulk 300
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    Littelfuse Inc IXTQ74N20P

    MOSFET N-CH 200V 74A TO3P
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    DigiKey IXTQ74N20P Tube 1
    • 1 $8.12
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    Newark IXTQ74N20P Bulk 300
    • 1 -
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    • 100 $4.99
    • 1000 $4.01
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    IXYS Corporation IXFC74N20P

    MOSFET N-CH 200V 35A ISOPLUS220
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    DigiKey IXFC74N20P Box 50
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    Find more 74N20P price and stock on Findchips.com

    74N20P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFC 74N20P VDSS ID25 RDS on Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated trr = = = ≤ 200 35 36 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 74N20P

    74n20

    Abstract: 36gd
    Text: PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 74N20P ISOPLUS220TM 6-15-05-D 74n20 36gd

    74N20P

    Abstract: No abstract text available
    Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A ≤ 34 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous


    Original     		PDF 74N20P O-268 74N20P

    74N20P

    Abstract: No abstract text available
    Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω ≤ 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous


    Original     		PDF 74N20P O-268 74N20P

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 74N20P ISOPLUS220TM 6-15-05-D

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous


    Original     		PDF 74N20P 74N20P O-268

    74n20

    Abstract: PLUS220SMD
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated = = = ≤ 200 74 34 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 74N20P 74N20PS 74N20P 74n20 PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 74N20P O-268

    74N20P

    Abstract: PLUS220SMD
    Text: PolarHTTM HiPerFET IXFH 74N20P IXFV 74N20P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr IXFV 74N20PS RDS on Symbol Test Conditions VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200


    Original     		PDF 74N20P 74N20PS 74N20P PLUS220SMD

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP