Untitled
Abstract: No abstract text available
Text: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and
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54S/74S289
64-BIT
16word
54/74S
54/74LS
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74LS289
Abstract: 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T
Text: 289 b 11 54S/74S289 54LS /74LS 289 <T' C O N N E C T IO N D IA G R A M P IN O U T A U <7 ao[T 64-BIT RANDOM ACCESS MEMORY Til vcc Tsl Ai csGE 771 A2 771 a 3 T2ID4 [7 [7 5, [I 02 [][ 52|T W ith O p e n -C o lle c to r O utputs we Oi D E S C R IP T IO N — T he ’289 is a h igh speed 6 4 -b it RAM o rg a n ize d as a 16w o rd by 4 -b it array. A d d re ss in p u ts are b u ffe re d to m in im ize lo a d in g , and
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54S/74S289
54LS/74LS289
64-BIT
16-word
54/74S
54/74LS
74LS289
74S289PC
54LS289DM
54S289DM
74LS289DC
74LS289FC
74LS289PC
74S289DC
74S289FC
S289T
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N82S131
Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
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MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
N82S131
N82S141
n82s123
MCM10149
MCM7681C
N82HS137
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74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
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MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
74s* programming
N82S16
prom 256x4 bit
MCM10149
MCM7681C
N82HS137
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74s289 ram
Abstract: No abstract text available
Text: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature
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Am27S02/27S03
64-Bit
Am27S02/02A
Am27S03/03A
74S289,
Am27S02A/02
74S189,
Am27S03A/03
74s289 ram
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MB7052
Abstract: MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053
Text: TTL/Bipolar PROM / RAM Reference Guide V2.f3 TS = Tri-State output OC = Open Collector output Hacked, copied, edited and extended by W.G. to give it a decent shape and handy booklet form The main part is extracted from
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--uPB410
------MB7051
uPB400
MB7056
----P3106
27S01
P3107
82S16
82S116
82S06
MB7052
MB7051
MB7122
27s49
MB7057
27S19
27s13
PROM intel 3601
MB7058
MB7053
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2AM27
Abstract: 27S02 amd am2 pin diagram am2 power CIRCUIT diagram
Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S < r v ie> fc Inc. Am27S02/Am27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns
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AM27S02
Am27S02/Am27S03
64-Sit
Am27S03
74S289,
74S189,
2AM27
27S02
amd am2 pin diagram
am2 power CIRCUIT diagram
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27S03
Abstract: No abstract text available
Text: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast " A " Version: Address access time 25ns Internal E C l circuitry for optimum speed/power perfor mance over voltage and temperature
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Am27S02/27S03
64-Bit
Am27S02/02A
Am27S03/03A
74S289,
Am27S02A/02
74S189,
Am27S03A/03
27S03
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AM27S03
Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns
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AM27S02
Am27S02/Am27S03
64-Bit
Am27S03
74S289,
74S189,
A35CS
20D3
74S189
74S289
fmuml
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PDF
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74S189
Abstract: 74S289 AM27S02 AM27S02PC CD000831 27S03
Text: A m 2 7 S 0 2 /2 7 S 0 3 64-Bit Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature
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Am27S02/27S03
64-Bit
Am27S02/02A
Am27S03/03A
74S289,
Am27S02A/02
74S189,
Am27S03A/03
74S189
74S289
AM27S02
AM27S02PC
CD000831
27S03
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74s288
Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Text: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A
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82S16
2701/27LS01
82S17
27S08/27LS0Ã
82S23
27S09/27LS09
82S123
27S10
82S126
27S11
74s288
SIGNETICS 74S188
74S188
74S287
74S474
mmi 6331
74S387
signetics 82s23
H6555
MMI 6349
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74S189
Abstract: 74S289 AM27S02
Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns
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AM27S02
Am27S02/Am27S03
64-Bit
Am27S03
74S289,
74S189,
74S189
74S289
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AM27S03
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns
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D05SSti3
Am27S02/Am27S03
64-Bit
Am27S02
Am27S03
74S289,
74S189,
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IC 74187
Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p
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N74S260N
55616D
N74S280AN
S5617B
N74S287N
1024-Bit
55618X
N74S288N
256-Bit
55619R
IC 74187
lt 6246
MMI 6330
74s188
ic 74s201
6301-1 prom
HARRIS 8249
mmi 6331
82S2708
74S288
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MH 74141
Abstract: Tesla katalog MH74S04 MH74188 information applikation MH74S287 mikroelektronik RFT CDB404E ucy 74132 MZH 115
Text: m o N r ^ e le l- c fe n a n il- c Information Applikation ._ B|B Information Applikation Heft 26: IMPORT-IS Teil 2 i ' . • fbkj veb Halbleiterwerk frankfurt/oder Ü B d batriab im vab ko m binat mfcr m M ftrnnllt DER TECHNIK I Bezirksvorstand Frankfurt/O.
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
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6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
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MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.
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360746lat
MM4220DF/MM5220DF
mm5221
MM4240
DS8807
MM5017
54S287
MM1402a equivalent
transistor bf 175
MM74C920
MM5061
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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PDF
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54S38
Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S
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38510/M
D012510
D011520
D011510
54S38
SN74298
SN74265
54175
NES 1004 naval specification
74L95
Transistor AF 138
07802-1
SN7437
SN54LS195A
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74ls314
Abstract: SN75450BN RM741DC 74LS208 MC1711G 74s214 SN75361AP 74LS207 RS 75491 MC1741L
Text: PRODUCT RANGE PAGE M IC R O P R O C E S S O R S 2-21 M E M O R IE S MOS M IC R O P R O C E S S O R S & S U P P O R T C IR C U IT S 2 2 -2 7 28 2 9 -3 0 DTL TTL L IN E A R IN T E R F A C E C IR C U IT S 5 5 / 7 5 S e rie s C o n tr o l C ir c u its C ro s s -R e fe re n c e G u id e
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dm8130
Abstract: 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76
Text: 19 7 6 N atio n al S e m ico n d u cto r C o rp . p 1 ? I m • ' % TTL Data Book D EV IC E MIL i 2502 2503 2504 5400 54H00 54L00 54LS00 5401 54H01 54L01 54LS01 5402 54L02 54LS02 5403 54L03 54LS03 5404 54H04 54L04 54LS04 5405 54H05 54L05 54LS05 5406 5407 5408
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54H00
54L00
54LS00
54H01
54L01
54LS01
54L02
54LS02
54L03
54LS03
dm8130
54175
DM74367
KS 2102
7486 ic truth table
signetics 2502
ci 8602 gn block diagram
ci 8602 gn
74s281
DM74LS76
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PDF
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
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PDF
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DM74367
Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Text: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,
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