plessey
Abstract: zvn1409 G146
Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •
|
OCR Scan
|
7520S33
QDG5L37
ZVN1409
G-142
7EB0S33
0DDSL41
G-143
7SSDS33
00DSb45
plessey
zvn1409
G146
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE □3 7 N-channel enhancement mode vertical DMOS FET dF | 722G533 □00b73fl 3 • ?- a s - ZVN3310F A B SO LU T E M AXIM UM R ATIN G S Parameter SO T-23 Symbol Unit V DS 100 V 'd 0.1 A 2 A ±20 V Drain-source voltage Continuous drain current at T A = 2 5 °C
|
OCR Scan
|
722G533
00b73fl
ZVN3310F
7520S33
DDb74a
|
PDF
|
g229
Abstract: ZVN3306B
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability
|
OCR Scan
|
ZVN3306A
ZVN3306B
ZVN3306F
0D0S727
G-233
7520S33
G-234
G-235
725DS33
DDD5734
g229
|
PDF
|