mbn1200gs12aw
Abstract: fast recovery diode 600v 1200A
Text: IGBT MODU ODULE MBN1200GS12AW OUTLINE DRAWING 130 110 2-M4 * High speed and low saturation voltage. G 46.75 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . Unit in mm E 110 19.5 27.5 FEAT EATURES RES 4-φ6.5 E 130 Silicon N-channel IGBT
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MBN1200GS12AW
mbn1200gs12aw
fast recovery diode 600v 1200A
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MBN600GS12AW
Abstract: 180Arms
Text: IGBT MODU ODULE MBN600GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 FEAT EATURES RES 2-M8 E * High speed and low saturation voltage. C 80 62 40 E * low noise due to built-in free-wheeling G diode - ultra soft fast recovery diode USFD .
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MBN600GS12AW
36max
MBN600GS12AW
180Arms
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MBM600GS6CW
Abstract: Hitachi DSA0047 RG43W
Text: IGBT MODU ODULE MBM600GS6CW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . * Isolated head sink (terminal to base).
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MBM600GS6CW
600any
MBM600GS6CW
Hitachi DSA0047
RG43W
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