RF2603
Abstract: TSSOP-16 010403
Text: RF2603 6 2.8V PCS UPCONVERTER Typical Applications • TDMA/CDMA PCS Systems • Portable Battery-Powered Equipment Product Description The RF2603 is a upconverter/pre-driver designed for PCS systems. The device features single-ended IF and LO inputs and single-ended RF output for ease of interface. The RF2603 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2603
RF2603
TSSOP-16
010403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2137 • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2137
RF2137
800MHz
950MHz
137400A
|
PDF
|
RF2126
Abstract: No abstract text available
Text: RF2126 • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 • PCS Communication Systems The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2126
RF2126
1800MHz
2500MHz.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2132
RF2132
800MHz
950MHz
IS-95A
|
PDF
|
L910
Abstract: No abstract text available
Text: RF2146 • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 4.8V PACS PCS Handsets The RF2146 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2146
RF2146
L910
|
PDF
|
RF2146
Abstract: No abstract text available
Text: RF2146 2 PCS LINEAR POWER AMPLIFIER Typical Applications • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery-Powered Equipment 2 Product Description The RF2146 is a high-power, high-efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2146
RF2146
1500MHz
2000MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2336 • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers 4 .004 .000
|
Original
|
RF2336
RF2336
233X410-
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF3106 Proposed • 3V CDMA US-PCS Handsets • Spread-Spectrum Systems VCC1 Si CMOS 1 2 7 GND 4 RF OUT 5 VCC2 Rev A0 000719 0.100 6.0 sq 4.390 2.500 0.600 Dimensions in mm.
|
Original
|
RF3106
RF3106
1850MHz
1910MHz
|
PDF
|
BCX75
Abstract: PM 7540 pin sieg BCX76 Q62702-C637 f4 MARKING CODE TO92
Text: SIE D SIEMENS • 3535bOS Q0mfiD3 TOT « S I E G SIEMENS AKTIENGESELLS CHA F PNP Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BCX 73, BCX 74 NPN Type BCX 75
|
OCR Scan
|
fl53SbOS
BCX76
Q62702-C636
Q62702-C636-S1
Q62702-C636-S2
Q62702-C636-S3
Q62702-C637
Q62702-C637-S1
Q62702-C637-S2
Q62702-C637-S3
BCX75
PM 7540 pin
sieg
BCX76
f4 MARKING CODE TO92
|
PDF
|
Transistor BSX 24
Abstract: BSX24 7626 transistor
Text: *BSX 24 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L îfc Preferred device D is p o s itif recommandé General applications Applications générales Maximum power dissipation Case TO -18
|
OCR Scan
|
10fiA
Transistor BSX 24
BSX24
7626 transistor
|
PDF
|
DTC1D3RE
Abstract: T106 T107 T146 T147 DTC1D3RUA
Text: b ÿ > V 7s £ /Transistors DTC1D3RE/DTC1D3RU A/DTC1D3RKA DTC1D3RE/DTC1D3RUA DTC1D3RKA Digital Transistors Includes Resistors /Transistor Switch ' í+ ff^ jÉ H /D im e n s io n s (Unit : mm) 1) s W T Z . Œ O & i f [ i i * i a i U T L ' S t : DTC1D3RE » ,
|
OCR Scan
|
D011M7S
DTC1D3RE
T106
T107
T146
T147
DTC1D3RUA
|
PDF
|
transistor C636
Abstract: case sot30 BCX75 C637 BCX76 SOT-30
Text: BCX 75, BCX76 PNP Transistors for AF pre-stages, driver stages and switching applications B C X 7 5 and BCX 76 are epitaxial PNP silicon planar transistors in a package 10 A 3 DIN 41868 sim. SO T-30 . The transistors are suitable for use in AF preand driver stages as well as for switching applications.
|
OCR Scan
|
BCX76
BCX75
OT-30)
Q62702-C
636-S1
Q62702-C636-S2
Q62702-C636-S3
Q62702-C637-S1
Q62702-C637-S2
Q62702-C637-S3
transistor C636
case sot30
C637
BCX76
SOT-30
|
PDF
|
SOT-30
Abstract: IC102T Q62702-C637-S2 Q62702-C636-S2 PNP-Transistoren
Text: PNP-Transistoren für IMF-Vor- und Treibeirstufen BCX 75 BCX 76 BCX 75 und BCX 76 sind epitaktische PNP-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnl. SOT-30 . Die Transistoren sind für NF-Vor- und Treiberstufen sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu sind vorgesehen
|
OCR Scan
|
OT-30)
Q26702-C636-S1
Q62702-C636-S2
Q62702-C636-S3
Q62702-C637-S1
Q62702-C637-S2
Q62702-C637-S3
103mA
SOT-30
IC102T
Q62702-C637-S2
Q62702-C636-S2
PNP-Transistoren
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF* RF2319 Preliminary MICRO DEVICES LINEAR CATV AM PLIFIER Typ ical A p plications • CATV Distribution Amplifiers 3 The RF2319 is a low cost, high power, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
OCR Scan
|
RF2319
RF2319
860MHz,
LCC-16
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: RF RF2128 MICRO DEVICES POWER A M P L IF IE R S M EDIUM POWER LINEAR AM PLIFIER Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final
|
OCR Scan
|
RF2128
45GHz
100mW
RF2125
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF RF2128 MICRO DEVICES POWER A M P L IF IE R S M EDIUM POWER LINEAR AM PLIFIER Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final
|
OCR Scan
|
RF2128
45GHz
100mW
RF2125
|
PDF
|
RF2119
Abstract: PSSOP16 F2119
Text: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held
|
OCR Scan
|
F2119
915MHz
RF2119
800MHz
960MHz
RF2119
PSSOP16
F2119
|
PDF
|
RF2125
Abstract: schematic diagram 50 VDC POWER SUPPLY
Text: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS H IG H POW ER L IN E A R A M P L IF IE R Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in digital PCS phone transm itters and base sta
|
OCR Scan
|
RF2125
RF2125
1500MHz
2200MHz.
250mA.
200mA
RF2125S12
schematic diagram 50 VDC POWER SUPPLY
|
PDF
|
class h power amplifier schematic
Abstract: power supply schematic diagram RF2125
Text: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS H IG H POW ER L IN E A R A M P L IF IE R Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in digital PCS phone transm itters and base sta
|
OCR Scan
|
RF2125
RF2125
1500MHz
2200MHz.
250mA.
200mA
RF2125S12
class h power amplifier schematic
power supply schematic diagram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH PO W ER LINEAR A M PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta tions requiring linear amplification operating between
|
OCR Scan
|
RF2125
1500MHz
2200MHz.
F2125
250mA.
F2125
RF2125
F2125S12
|
PDF
|
RF2125
Abstract: class h power amplifier schematic transistor J1y
Text: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS HIGH POWER LINEAR AMPLIFIER Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed for use as the final RF am plifier in digital PCS phone transm itters and base sta tions requiring linear am plification operating betw een
|
OCR Scan
|
RF2125
RF2125
1500MHz
2200MHz.
315spective
250mA.
class h power amplifier schematic
transistor J1y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH POWER LINEAR AM PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta tions requiring linear amplification operating between
|
OCR Scan
|
RF2125
250mA.
RF2125
RF2125S12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH POWER LINEAR AM PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta tions requiring linear amplification operating between
|
OCR Scan
|
RF2125
250mA.
RF2125
RF2125S12
|
PDF
|
cdi schematics pcb
Abstract: IT28 it27 ac cdi schematic diagram cdi schematic cdi schematics F2152 I960 RF2152
Text: RF RF2152 Preliminary M ICRO-DEVICES POWER AMPLIFIERS DU AL-M O D E CD M A /A M PS OR TD M A /A M P S 3 V POWER A M P L IF IE R manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in dual-mode
|
OCR Scan
|
RF2152
RF2152
800MHz
950MHz
PSSOP-16
-TW30PAE
25PAE
85PAE
-T-30Gan
25Gan
cdi schematics pcb
IT28
it27
ac cdi schematic diagram
cdi schematic
cdi schematics
F2152
I960
|
PDF
|
