4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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PDF
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SMD W2T
Abstract: w2t smd BTS 131 SMD MBA IST DATE SHEET SN54ACT3632
Text: • fl^bi723 aiiossT ist. ■ SN54ACT3632 512x36x2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY _ _ S G B S310-SEPTEM BER 1996 * Free-Running CLKA and CLKB Can Be Asynchronous or Coincident ► Two Independent 512 x 36 Clocked FIFOs
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flibi723
D110S21
SN54ACT3632
512x36x2
SGBS310-SEPTEMBER
5962-9562801QYA
132-Pin
SMD W2T
w2t smd
BTS 131 SMD
MBA IST DATE SHEET
SN54ACT3632
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KM62256C
Abstract: KM62256CL km62256cls KM62256CL-7
Text: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n
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KM62256CL
32Kx8
385mW
KM62256CLP/CLP-L
28-pin
KM62256CLG/CLG-L
KM62256CLTG/CLTG-L
KM62256CLRG/CLRG-L
KM62256C
km62256cls
KM62256CL-7
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PDF
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2114 ram
Abstract: 5 pin reset ic ARB AIC-300F 2114 Ram pinout 18
Text: AIC-300F adaptec, inc. Dual-Poit Buffer Controller PRELIMINARY June 1987 • 16-Bit Buffer Addressing csA0A1 A2A3A4 A5A6A7SHP OR A 8 SDP OR A 9 ALE . RST . PORT A REQ CLK . RD . WR A/D7 A/D6 GND - 1 2 3 4 5 6 7 8 9 AIC-300F 10 DUAL PORT 11' BUFFER 12 CONTROLLER
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AIC-300F
16-Bit
AIC-010
40-Lead
44-Lead
TH/BKMKR/BOFORS4/87
2114 ram
5 pin reset ic ARB
2114 Ram pinout 18
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PDF
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cdfp1
Abstract: 29C040 qml-38535 GDIP1-T32 CDFP1-F32
Text: REVISIONS LTR DATE DESCRIPTION APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N.'ft. STAND ARD IZED M IL IT A R Y DRAWING THIS M A U I MB IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A
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PROGRAMMINBUL-103
MIL-BUL-103
MIL-BUL-103
QML-38535.
QML-38535
MIL-BUL-103.
cdfp1
29C040
GDIP1-T32
CDFP1-F32
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PDF
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qml-38535
Abstract: Device Marking A3 GDIP1-T28
Text: REVISIONS D A T E YR-MO-DA DESCRIPTION LTR APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF S H E E T S PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAUING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT Of DEFENSE 18 REV 10 SHEET
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OCR Scan
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5962-E043-93
QML-38535.
QHL-38535
MIL-BUL-103.
MIL-BUL-103
QPL-38510
QML-38534
MIL-BUL-103
qml-38535
Device Marking A3
GDIP1-T28
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PDF
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68 1103
Abstract: KM681000BL A14F
Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced
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OCR Scan
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KM681000BL
128Kx8
385mW
KM681OOOBLP/BLP-L
600mil)
KM681000BLG/BLG-L:
525mil)
KM681OOOBLT/BLT-L
0820F)
KM681000BLR/BLR-L:
68 1103
A14F
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PDF
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UT-34-SP
Abstract: Gigabit Logic 5sh3
Text: TE K T R O N I X INC/ TRI âU I N T SbE » B fl'JOfc.aifl G Q Q Q S R R S H T R Ö 'T'-S Z-ivo 7 Im E iL i G ig a B it L o g ic 16G076 LED Driver 1 G b it/s N R Z D a ta R a te FEATURES >1-150 mA output current • DC-blocked ECL, GaAs PicoLogic compatible
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16G076
16G076
050P3
0080TOP
UT-34-SP
Gigabit Logic
5sh3
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PDF
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Untitled
Abstract: No abstract text available
Text: HM538122 Series Preliminary 131,072 x 8-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM 538122JP Series The HM538122 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM
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HM538122
538122JP
128k-word
256-word
3DCP40D
CP-40D)
787l0
TTP-20D
TTP-20DR
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V63C31321024 32K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM PRELIMINARY Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31321024 is a high-speed synchro nous burst pipelined CMOS SRAM organized as 32,768 words by 32 bits that supports both ¡486/
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V63C31321024
100-pin
680X0/Power
V63C31321024
0M02MIN.
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PDF
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cd 3313 eo
Abstract: SIS630 sis 630 TFK U 111 B TFK U 4311 B 340S2 tfk 014 TFK S 153 P 101 SIS-630 PPCV
Text: 13/ SlEYiCTRL Q RTTCTWL 340S2 REV: 05 PN:37-38016U -50 -JiliSMCEIHERMON ,AU1 Afc£2ac 23 23 23 .AN31 A i 23. . AL», _AM2Zc A U JC JiMaiL HR&oy? HREQfi H V 33 HREOfO •> wtj5 1 W H - » fVMUJ ~FTOT "hOTT H HA«? u* vu tu a or oc m i* W M IP M '* a et ec S k t e v tr
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340S2
37-38016U
AN29C
BLM1MZ71S
W11A231S
cd 3313 eo
SIS630
sis 630
TFK U 111 B
TFK U 4311 B
340S2
tfk 014
TFK S 153 P 101
SIS-630
PPCV
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PDF
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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PDF
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1MBA10-090
Abstract: No abstract text available
Text: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions »•it 11 > *£
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1MBA10-Q90
1MBA10-090.
MS5F2381
1MBA10-090
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PDF
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rectifier diode 6 amp 400 volt
Abstract: 340E-01 transistor 2 Amp 3 volt MJH16018 rectifier diode 20 amp 800 volt blocking diode 20 amp 1200 volt MUR30100E 200 Amp current 1000 volt diode 100 Amp current 1000 volt diode blocking diode 200 amp 1200 volt
Text: Order this data sheet by MUR30100E/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TM Sw itchm ode Pow er Rectifier MUR30100E . designed for use in switching power supplies, inverters and as freewheeling diodes, these state-of-the-art devices have the following features:
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MUR30100E/D
MUR30100E
O-218
25137R
MUR30100E/D
rectifier diode 6 amp 400 volt
340E-01
transistor 2 Amp 3 volt
MJH16018
rectifier diode 20 amp 800 volt
blocking diode 20 amp 1200 volt
MUR30100E
200 Amp current 1000 volt diode
100 Amp current 1000 volt diode
blocking diode 200 amp 1200 volt
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Untitled
Abstract: No abstract text available
Text: S c h u t z v e r m e r k nach DINB4 c (F is c h e r E l e k t r o n ik 2 0 0 0 ) F re im a s s to le ra n z O b e r f la c h e D IN 2 7 6 8 m fi/cherelektronik S 3 M a f l s t a b =1:1 D a tu m B e a r b . 30.03.00 G epr. z. Anderung Datum Name K u n d e : 7 7 7 7 7 Fischer Ele ktron ik
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OCR Scan
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A3300S00510001H
oerper\20
l0\7777T\A330OS0
51000l|
l38AJ)
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PDF
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MPD424260
Abstract: 424260-70 nec japan
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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uPD42S4260
uPD424260
16-BIT,
PD42S4260
44-pin
40-pin
PD42S4260-70,
/iPD42S
VP15-207-2
MPD424260
424260-70 nec japan
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PDF
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tj 8p8c
Abstract: No abstract text available
Text: MODULAR TELEPHONE JACKS ADAM TECH ADAM TECHNOLOGIES INC. M TJ SERIES INTRODUCTION: Adam Tech MTJ Series Modular Telephone Jacks are designed for direct m ating to PC boards in thru-hole or surface mount applications. Together with our MTP Series Modular Plugs they
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED ANALOG A Division of intech ADC5200 SERIES DESCRIPTION HIGH SPEED 12-BIT A /D CONVERTERS T he A D C 5200 Series devices are successive approxim ation 12-bit A /D converters with 13/nsec or 50 Jtsec conversion tim e. These devices are laser trim m ed for ultra accu racy and reliability and
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ADC5200
12-BIT
12-bit
13/nsec
13/xsecto
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 13 4 D IG IT NOTESi D A T E CODE S E E NOTE 5 • M A TERIA L- YW7TW7rur7rur7i IN SULATOR - LC P , UL 9 4 V -0 , COLOR BLACK CONTACTS - PHOSPHOR BRONZE S E E SHT. 5 & 6 FOR CHART DIMENSIONS AND EDP NO.'S ' p a n RECOMMENDED MATING PIN LENGTH: LOWER ROW - .2 0 0 1 MIN., .2 8 5 1 MAX.
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120PC
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PDF
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NCT Group
Abstract: No abstract text available
Text: Surface Acoustic Wave Resonator Filter SF085ZB-001 TOKO No. 1. Dimensions Part No. 1.8 max < > Unit: mm Input: 9 Output: 4 Ground: 1,2,3 5,6,7 8,10 Tolerance: ± 0.2 2. Electrical characteristics Parameter Unit 2.1 Center frequency Fo MHz 2.2 Passband width (at 3dB)
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SF085ZB-001
15KHz)
10KHz)
7777T
657AN-1304GHQ)
NCT Group
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PDF
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sanyo capacitor se green
Abstract: TO068 LC7512 lc7510
Text: SANYO SEMICONDUCTOR CORP 32E D 7 cì cì 7G7L j DD0 ÖQ3 7 □ T-77-21 C M O S 1C 3 007A S93B Automatic Music Selector up to 3 Selections for Tape Recorders T he L C 7510/7512 are single-chip ICs designed to au tom atically se lec t your desired m usic up to 3 selection s
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OCR Scan
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T-77-21
MFP24
QIP48A
00077b3
IP24S
MFP30
QIP80B
sanyo capacitor se green
TO068
LC7512
lc7510
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PDF
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AD918
Abstract: TC514256 TC514266 TC514256A
Text: TOSHIBA MOS MEMORY PRODUCTS TC514266AP/AJ/AZ-70, TC514266AP/AJ/AZ-80 TC514266AP/AJ/AZ-10 DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bit. The TC514266AP/AJ/AZ utilizes TOSHIBArs CMOS Silicon gate process technology as
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TC514266AP/AJ/AZ-70,
TC514266AP/AJ/AZ-80
TC514266AP/AJ/AZ-10
TC514266AP/AJ/AZ
TC514266AP/AJ/AZ-80
TC5142S6AP/AJ/AZ-10
AD918
TC514256
TC514266
TC514256A
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PDF
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1h39
Abstract: itt 2222 SN74ABT3614
Text: SN74ABT3614 64 x 36 x 2 CLOCKED FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SC B S1 2 6 C -JU N E 1992- R E V IS E D JANUARY 1994 Free-Running CLKA and CLKB Can Be Asynchronous or Coincident TWo Independent 64 x 36 Clocked FIFOs Buffering Data In Opposite Directions
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OCR Scan
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SN74ABT3614
36-bit,
18-bit,
36TION
1h39
itt 2222
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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OCR Scan
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16-BIT,
uPD42S18160L
4218160L
PD42S18160L
50-pin
42-pin
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PDF
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