Untitled
Abstract: No abstract text available
Text: SD Series - Precision Shrink Sockets i,778mm/.070“pitch E-tec the Sw iss connection „Break-away“ Shrink SIP Open & Closed Frame Shrink DIP Terminal Styles 1 .4 4 .0 5 6 3 .1 7 .1 2 4 118 Standard terminal 081 Wire-wrap terminal 1.32 rosi 3.S3 .154 3.96
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18
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CQX14,
CQX16
CQX14/16
940nm
ST1332
74bbfi
74bbfiSl
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255
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1N6264
1N6264
940nm
ST1332
74bbasi
000b3
ST1002
ST1007
ST1003
ST1006
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Untitled
Abstract: No abstract text available
Text: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021
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L14P1/2
00mW/Â
at2870Â
74bbfl51
0D0b434
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Untitled
Abstract: No abstract text available
Text: FQ B GaAs INFRARED EMITTING DIODE wmm* OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES Good optical to mechanical alignment SYM BO L IN C H E S MIN. A M ILLIM ETER S MAX.
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CQX15,
CQX17
CQX15/17
940nm
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Untitled
Abstract: No abstract text available
Text: E HERMETIC SILICON PHOTODARLINGTON 9 iP iß u u iR im c s BPW38 ' PACKAGE IHMEMSIONS Tfce BPW38 is a silicon photadarlington mounted in a narrow angle TO-18 package. SYMBOL A •D , a 6: h tNCHES MIN. MAX. .225 -256 .021 .Olfi .209 .230 .195 .178 iQCNQM .050 NOM
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BPW38
BPW38
533mm)
00mW/C
f940nm.
2870C
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ST10M
Abstract: No abstract text available
Text: E O 8 GaAs INFRARED EMITTING DIODE P?ßfLiCTBSiiCS 1N6264 The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. ST1332 • Good optical to mechanical alignment SYMBOL A j»b «D &C, e «. rt i k L » INCHES MAX. MIN 255 ,01S .021 .230 ,iac .<86 .100 NOM.
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1N6264
1N6264
940nm
ST1332
ST16Q4
ST1007
ST1006
ST10M
ST1004
ST10M
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Untitled
Abstract: No abstract text available
Text: CXA1293M/N Sony. Low Power FM IF Amplifier Description The C X A 1 2 93 M /N are single-chip ICs FM radio such as CELLULAR mobile, etc. C XA1293M 24pin SOP Plastic CXA1293N 24pin VSOP (P lastic) Features • Low current consum ption (lcc = 3.8m A ,at VCC=3.6V )
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CXA1293M/N
XA1293M
24pin
CXA1293N
CXA1003.
50MIL)
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LTA 902 sx
Abstract: 3SK166
Text: 3SK166 Sony. GaAs N-channel Dual-Gate MES FET Description Package Outline 3 S K 166 is a GaAs N-channel Dual-Gate MES FET fo r lo w noise UHF am plifiers. Low noise and high gain characteristics are accom plished by optim um mask pattern design. Easier high frequency circuits adjust
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3SK166
9-10-a
50MIL)
LTA 902 sx
3SK166
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ST1604
Abstract: LED55B LED56 MA171 st1332 LED55C
Text: so GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G FEATURES ST1332 SYM BOL IN C H E S MIN. A MAX. M ILL IM E T E R S MIN. .255
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LED55B/C,
LED56
ST1332
LED55B/C
LED56
940nm
LED55B
100mA"
LED55C
ST1604
MA171
st1332
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cfvm455
Abstract: CXA1484M CXA1484N 4 PIN THROUGH HOLE TRANSISTORS CDBM455 Shrink Zig-Zag In-line Package
Text: CXA1484M/N SONY. Low Current Consumption FM IF Amplifier for Double Conversion Pagers Description T h e C X A 1 484 M /N is a low current consumption FM IF amplifiers which employ the newest bipolar process. It is suitable for double conversion pagers for overseas
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CXA1484M/N
CXA1484M
CXA1484N
20-pin
50MIL)
cfvm455
4 PIN THROUGH HOLE TRANSISTORS
CDBM455
Shrink Zig-Zag In-line Package
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amplifier - ATH 226
Abstract: mobile control car a2c0 sony car volume chip
Text: CXD1271Q/R SONY, Cellular Telephone Filter LSI Description The CXD1271Q/R is a filter LSI chip designed for the cellular telephone. A successor to the already marketed CXD1237Q/R, this LSI chip conforms to the N-TACS standards and is easy to adjust as it allows serial data
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CXD1271Q/R
CXD1237Q/R,
CXD1270Q/R
50MIL)
127mm
amplifier - ATH 226
mobile control car
a2c0
sony car volume chip
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CXD1233BM
Abstract: cxd1233 CXD1233BQ 20 mhz through hole crystal oscillator CXD12338M line code manchester Manchester code manchester
Text: CXD1233BM/BQ SONY. Cordless Telephone Modem IC Description CXD1233BM/BQ developed for cordless tele phones, provides a modem when used in con junction w ith microcomputor and filter. Features • Uses the low error rate manchester code, de coder and encoder.
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CXD1233BM/BQ
50MIL)
127mm
CXD1233BM
cxd1233
CXD1233BQ
20 mhz through hole crystal oscillator
CXD12338M
line code manchester
Manchester code
manchester
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode
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LED55B,
LED55C,
LED56,
LED55BF,
LED55CF,
LED56F
LED55B-LED55C-LED56
LED55C
LED56
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st1029
Abstract: L14G ST1026 T125 f5d1 diode ST10-30 MA7 diode 3143 diode ST1025 ST1030
Text: EO AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5D1/2/3 PACKAGE DIMENSIONS DESCRIPTION The F5D series is 880nm LEDs in a narrow angle, TO-46 package. SEATING FEATURES ST1332 SYMBOL A $3, e ei h i k L a * Good optical to mechanical alignment INCHES MfN. MAX.
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880nm
ST1604
ST102S-99
ST1029-99
ST1030-99
st1029
L14G
ST1026
T125
f5d1 diode
ST10-30
MA7 diode
3143 diode
ST1025
ST1030
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ST1026
Abstract: ST1025 ST1331 DIODE T 25-4 jo ST1028
Text: E*Q AIGaAs INFRARED EMITTING DIODE OPTOELECTBOHiCS F5E1/2/3 PACKAGE DIMENSIONS DESCRIPTION The F5E series is 880nm LEDs in a wide angle, TO-46 package. SEATING FEATURES • Good optical to mechanical alignment SYMBOL INCHES MIN. A 0b fa e . MIN. MAX. 3.93
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880nm
ST1331
ST1604
ST1025
ST1026
ST1027
ST1028-9S
DIODE T 25-4 jo
ST1028
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ST1076
Abstract: L14F2 ST1333 l14f1 ST-107 of94
Text: HERMETIC SILICON PHOTODARLINGTON OPTOELECTRONICS L14F1/2 PACKAGE DIMENSIONS DESCRIPTION The L14FX is a silicon photodaiiington mounted in a narrow angle, TO-18 package. ¿b-g*- SYMBOL A 40 40, e e, h I k L a FEATURES INCHES MIN, MAX 255 ,225 .016 ,021 .209
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L14F1/2
L14FX
ST1333
533mm}
ST1073
ST1076
ST1074
ST1075
L14F2
l14f1
ST-107
of94
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p 421 optoisolator
Abstract: 421 opto isolator bo 947 bo 615
Text: Dim ensional O utlines Package Designations TO-18 Style Hermetic Package »57 2-Lead with Flat Window 2-Lead with Lens 3-Lead with Flat Window 3-Lead with Lens 6-Pin Dual-in-Line Plastic Package #295 #296 Optolsolator Standard Version Lead-Formed #297 #298
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st 1086
Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47
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L14G1/2/3
ST1605
533mm
T1082
ST1087
L14G1
LED55B)
st 1086
L14G1 phototransistor
L14G1
ST-1605
ST1087
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a 3131 opto
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE PT0 ELEC1 RÛIICS 1N6265 PACKAGE DIMENSIONS II DESCRIPTION Th e 1N 6265 is a 940nm LED in a wide angle, TO-46 package. SEATIN G FEATURES ST1331 SYM BO L Good optical to m echanical alignm ent IN C H E S M IL L IM E T E R S MIN.
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1N6265
940nm
ST1331
100nA
ST1005
1N6265
a 3131 opto
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t 935
Abstract: 1r 10e T935
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. SEATING a FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A <£b 40 e 01 h MAX MILLIMETERS
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1N6264
1N6264
940nm
ST1332
ST1604
t 935
1r 10e
T935
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LED56F
Abstract: phototransistor 940nm
Text: G aA s INFRARED EMITTING DIODE DPTOELECÏBOIIICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING 3 FEATURES Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMFTERS
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LED55BF/CF,
LED56F
LED55BF/CF
LED56F
940nm
ST1604
phototransistor 940nm
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OF LED 55B
Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Text: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of
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LED55B,
LED55C
LED56,
LED55BF,
LED55CF,
LED56F
LED55B-LED55C-LED56
LED56
OF LED 55B
LED55B
LED56F
55BF
ge 55b
NMTC
LED55BF
LED55CF
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ST1254
Abstract: ST-125-4 BFW36
Text: HERMETIC SILICON PHOTOTRANSISTOR 6PT8 E lECTBOH t CS BPW36/BPW37 The BFW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. o SYMBOL A 80 »0 #0, e e. h i K i. » INCHES MIN. MAX .226 .255 .016 .021 .209 .230 .J?8 .196 .100 MOM .QSC MOM
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BPW36/BPW37
BFW36/37
27NC3M
ST16G7
533mm)
ST1254
T1252
C0X14)
BPW36
ST1254
ST-125-4
BFW36
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