AN-994
Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Text: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A
High Frequency Buck Converters for
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93888B
IRF3704
IRF3704S
IRF3704L
O-220AB
O-262
AN-994
IRF3704
IRF3704L
IRF3704S
ed 77A DIODE
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PF6-40
Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP
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APT77N60JC3
OT-227
APT77N60JC3
PF6-40
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transistors mj 1504
Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP
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APT77N60JC3
OT-227
APT77N60JC3
transistors mj 1504
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AN-994
Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Text: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A
High Frequency Buck Converters for
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Original
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93888B
IRF3704
IRF3704S
IRF3704L
O-220AB
O-262
AN-994
IRF3704
IRF3704L
IRF3704S
ed 77A DIODE
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PDF
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ed 77A DIODE
Abstract: AN-994 IRF3704 IRF3704L IRF3704S
Text: PD - 93888A IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A High Frequency Buck Converters for
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3888A
IRF3704
IRF3704S
IRF3704L
O-220AB
O-262
V52-7105
ed 77A DIODE
AN-994
IRF3704
IRF3704L
IRF3704S
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APT50M50JVR
Abstract: No abstract text available
Text: APT50M50JVR 77A 0.050Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M50JVR
OT-227
E145592
APT50M50JVR
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APT50M50JVFR
Abstract: No abstract text available
Text: APT50M50JVFR 77A 0.050Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M50JVFR
OT-227
E145592
APT50M50JVFR
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APT77N60JC3
Abstract: transistors mj 1504
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package
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APT77N60JC3
OT-227
APT77N60JC3
transistors mj 1504
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APT77N60JC3
Abstract: transistors mj 1504
Text: APT77N60JC3 0.035Ω 600V 77A Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode
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APT77N60JC3
OT-227
APT77N60JC3
transistors mj 1504
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APT60DF60
Abstract: 77A DIODE APT50M60L2VFR diode 77a
Text: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
O-264
O-264
APT60DF60
77A DIODE
APT50M60L2VFR
diode 77a
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ed 77A DIODE
Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
Text: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
O-264
O-264
APT50M60
ed 77A DIODE
77A DIODE
APT50M60L2VR
DIODE ED 92
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IRL3705N
Abstract: No abstract text available
Text: PD - 9.1370B IRL3705N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.01Ω G Description ID = 77A
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1370B
IRL3705N
O-220
IRL3705N
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
O-264
O-264
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APT50M60L2VR
Abstract: 77A DIODE
Text: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
O-264
O-264
APT50M60L2VR
77A DIODE
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APT77N60JC3
Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package
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APT77N60JC3
OT-227
APT77N60JC3
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Untitled
Abstract: No abstract text available
Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT77N60BC6
APT77N60SC6
O-247
Diss20
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APT77N60JC3
Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode
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APT77N60JC3
OT-227
APT77N60JC3
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ed 77A DIODE
Abstract: APT50M50JLC 77A DIODE ed 77A
Text: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT50M50JLC
OT-227
ed 77A DIODE
APT50M50JLC
77A DIODE
ed 77A
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transistors mj 1504
Abstract: mj 1504 APT77N60JC3 ce 77a diode 77a
Text: APT77N60JC3 0.035Ω 600V 77A Super Junction MOSFET S S • Ultra Low RDS ON D G • Low Miller Capacitance S • Ultra Low Gate Charge, Qg • Avalanche Energy Rated OT 22 7 "UL Recognized" file # E145592 IS OTO P • Extreme dv/dt Rated D • Dual die (parallel)
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APT77N60JC3
E145592
OT-227
transistors mj 1504
mj 1504
APT77N60JC3
ce 77a
diode 77a
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50V 60A MOSFET
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MOSFET 600v 60a MIC4452
Text: APT77H60J 600V, 77A, 0.065Ω Max, trr ≤300ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
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APT77H60J
300ns
50V 60A MOSFET
Fast Recovery Bridge Rectifier, 60A, 600V
MOSFET 600v 60a
MIC4452
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APT77N60BC6
Abstract: APT77N60SC6
Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT77N60BC6
APT77N60SC6
O-247
APT77N60BC6
APT77N60SC6
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PDF
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ed 77A DIODE
Abstract: APT50M50JLC
Text: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT50M50JLC
OT-227
ed 77A DIODE
APT50M50JLC
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated
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OCR Scan
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BAT81/82/83
BAT81
BAT82
BAT83
bb53831
D02b2fl2
bb53T31
DO-34)
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