Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SK3377 TO-252 Low Ciss : Ciss = 760 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 10 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 78 m Unit: mm +0.1 2.30-0.1 0.127 max
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2SK3377
O-252
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78 DIODE SMD
Abstract: S 170 MOSFET TRANSISTOR 2SK3377
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3377 TO-252 Low Ciss : Ciss = 760 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 10 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 78 m Unit: mm +0.1 2.30-0.1
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2SK3377
O-252
78 DIODE SMD
S 170 MOSFET TRANSISTOR
2SK3377
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110N06L
Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
PG-TO263-3-2
P-TO263-3-2
PG-TO220-3-1
110N06L
110N06L
g3pf
DIODE smd marking Ag
PG-TO220-3
PG-TO263-3-2
MARKING G3 INFINEON
SMD diode D94
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PDF
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marking D78
Abstract: smd diode marking 78A
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
PG-TO263-3-2
P-TO263-3-2
110N06L
P-TO220-3-1
marking D78
smd diode marking 78A
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PG-TO220-3
Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
IEC61249-2-21
PG-TO263-3-2
P-TO263-3-2
PG-TO220-3-1
110N06L
PG-TO220-3
PG-TO263-3-2
IEC61249-2-21
IPP110N06L G
110N06L
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PDF
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110N06L
Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
PG-TO263-3
P-TO26
PG-TO220-3
110N06L
110N06L
smd diode 78a
smd diode marking 78A
SMD diode D94
PG-TO220-3
PG-TO263
marking d78
IPP110N
diode smd 312
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 08/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC • Al2O3 DBC
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I27247
70MT060WHTAPbF
150kHz
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PDF
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Diode smd code EXP
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
Diode smd code EXP
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC)
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70MT060WHTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC)
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70MT060WHTAPbF
E78996
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC)
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70MT060WHTAPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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Original
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I27247
70MT060WHTAPbF
150kHz
12-Mar-07
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PDF
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igbt 600 35
Abstract: No abstract text available
Text: 70MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Warp2 Speed IGBT , 70 A FEATURES • NPT warp2 speed IGBT technology with positive temperature coefficient RoHS • HEXFRED antiparallel diodes with ultrasoft reverse recovery COMPLIANT • SMD thermistor (NTC)
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70MT060WHTAPbF
18-Jul-08
igbt 600 35
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Warp2 Speed IGBT , 70 A FEATURES • NPT warp2 speed IGBT technology with positive temperature coefficient RoHS • HEXFRED antiparallel diodes with ultrasoft reverse recovery COMPLIANT • SMD thermistor (NTC)
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70MT060WHTAPbF
18-Jul-08
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PDF
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC)
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Original
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70MT060WHTAPbF
E78996
2002/95/EC
11-Mar-11
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PDF
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smd diode marking 78A
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T30100-HF Reverse Voltage: 100 Volts Forward Current: 30 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. Bottom View 0.183(4.65) 0.171(4.35) 0.104(2.65) 0.093(2.35) - Low power loss, High efficiency.
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CDBZ5T30100-HF
MIL-STD-750,
054MC
QW-JB051
smd diode marking 78A
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T30100-HF Reverse Voltage: 100 Volts Forward Current: 30 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. Bottom View 0.183(4.65) 0.171(4.35) 0.104(2.65) 0.093(2.35) - Low power loss, High efficiency.
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CDBZ5T30100-HF
QW-JB051
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PDF
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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ch 306
Abstract: smd 1C kds8958 1b smd transistor 78 DIODE SMD smd transistor 26
Text: Transistors IC SMD Type Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS ON = 0.028 RDS(ON) = 0.040 @ VGS = 10 V @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 @ VGS =- 10 V @ VGS =-4.5V Fast switching speed
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KDS8958
ch 306
smd 1C
kds8958
1b smd transistor
78 DIODE SMD
smd transistor 26
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PDF
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diode BAND
Abstract: DAN235K
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes
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OCR Scan
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DAN235K
100MHz
diode BAND
DAN235K
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PDF
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1)Designed for mounting on small surface areas (SMD3) 2)High reliability Band switching diodes •C o n s tru c tio n
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OCR Scan
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DAN235K
100MHz
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PDF
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2n08l07
Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP80N08S2L-07
SPB80N08S2L-07
Q67060-S6015
Q67060-S6016
2N08L07
BSPP80N08S2L-07
BSPB80N08S2L-07,
2n08l07
67a smd
2N08L07 POWER
2n08l
2n08l07 marking
smd diode 67A
s6015
ANPS071E
SPB80N08S2L-07
SPP80N08S2L-07
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2n08l07
Abstract: 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a
Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP80N08S2L-07
SPB80N08S2L-07
Q67060-S6015
Q67060-S6016
2N08L07
BSPP80N08S2L-07
BSPB80N08S2L-07,
67a smd
2N08L07 POWER
"2N08L07"
smd diode 67A
smd code "67A"
2n08l07 marking
diode um 67A
Q67060-S6016
smd 67a
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